SLOS318L april   2000  – august 2023 THS4130 , THS4131

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Device Comparison Table
  7. 6 Pin Configuration and Functions
  8. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power-Down Mode
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Output Common-Mode Voltage
        1. 9.1.1.1 Resistor Matching
      2. 9.1.2 Driving a Capacitive Load
      3. 9.1.3 Data Converters
      4. 9.1.4 Single-Supply Applications
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 PowerPAD™ Integrated Circuit Package Design Considerations
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.4 Thermal Information

THERMAL METRIC(1) THS413x UNIT
D (SOIC) DGK (VSSOP) DGN (HVSSOP)
8 PINS 8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 126.3 147.3 57.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 67.3 37.9 76.3 °C/W
RθJB Junction-to-board thermal resistance 69.8 83.2 30.0 °C/W
ψJT Junction-to-top characterization parameter 19.5 0.9 4.0 °C/W
ψJB Junction-to-board characterization parameter 69.0 81.6 29.9 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A N/A 14.3 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.