SLLSF04D April   2018  – June 2022 TLIN1024-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 ESD Ratings - IEC
    4. 6.4 Thermal Information
    5. 6.5 Recommended Operating Conditions
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics (1)
    8. 6.8 Timing Requirements
    9.     Typical Characteristics
      1.      Parameter Measurement Information
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  LIN (Local Interconnect Network) Bus
        1. 7.3.1.1 LIN Transmitter Characteristics
        2. 7.3.1.2 LIN Receiver Characteristics
          1. 7.3.1.2.1 Termination
      2. 7.3.2  TXD (Transmit Input/Output)
      3. 7.3.3  RXD (Receive Output)
      4. 7.3.4  VSUP1/2 (Supply Voltage)
      5. 7.3.5  GND (Ground)
      6. 7.3.6  EN (Enable Input)
      7. 7.3.7  Protection Features
      8. 7.3.8  TXD Dominant Time Out (DTO)
      9. 7.3.9  Bus Stuck Dominant System Fault: False Wake Up Lockout
      10. 7.3.10 Thermal Shutdown
      11. 7.3.11 Under Voltage on VSUP
      12. 7.3.12 Unpowered Device and LIN Bus
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Sleep Mode
      3. 7.4.3 Standby Mode
      4. 7.4.4 Wake Up Events
        1. 7.4.4.1 Wake Up Request (RXD)
        2. 7.4.4.2 Mode Transitions
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Normal Mode Application Note
        2. 8.2.2.2 Standby Mode Application Note
        3. 8.2.2.3 TXD Dominant State Timeout Application Note
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  9. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  10. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
Power Supply
VSUPOperational supply voltage (ISO/DIS 17987 Param 10)Device is operational beyond the LIN defined nominal supply voltage range See Figure 7-1 and Figure 7-2436V
VSUPNominal supply voltage (ISO/DIS 17987 Param 10): Normal Mode: Ramp VSUP while LIN signal is a 10 kHZ Square Wave with 50 % duty cycle and 18V swing.Normal and Standby Modes Normal Mode: Ramp VSUP while LIN signal is a 10 kHZ Square Wave with 50 % duty cycle and 18V swing. See Figure 7-1 and Figure 7-2436V
Sleep Mode436V
UVSUPUnder voltage VSUP threshold2.93.85V
UVHYSDelta hysteresis voltage for VSUP under voltage threshold0.2V
ISUPSupply Current(1)Normal Mode: EN = High, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF (See Figure 7-7)315mA
Standby Mode: EN = Low, bus dominant: total bus load where RLIN > 500 Ω and CLIN < 10 nF (See Figure 7-7)2.28mA
ISUPSupply Current(1)Normal Mode: EN = High, Bus Recessive: LIN = VSUP,12mA
Standby Mode: EN = Low, Bus Recessive: LIN = VSUP,4080µA
Sleep Mode: 4.0 V < VSUP < 14 V, LIN = VSUP, EN = 0 V, TXD and RXD Floating 720µA
Sleep Mode: 14 V < VSUP < 36 V, LIN = VSUP, EN = 0 V, TXD and RXD Floating30µA
RXD OUTPUT PIN (OPEN DRAIN)
VOLOutput Low voltageBased upon External pull up to VCC0.6V
IOLLow level output current, open drainLIN = 0 V, RXD = 0.4 V1.5mA
IILGLeakage current, high-levelLIN = VSUP, RXD = 5 V–505µA
TXD INPUT PIN
VILLow level input voltage–0.30.8V
VIHHigh level input voltage25.5V
VITInput threshold voltage, normal modes& selective wake modes30500mV
IILGLow level input leakage currentTXD = Low–505µA
RTXDInteral pulldown resitor value125350800
EN INPUT PIN
VILLow level input voltage–0.30.8V
VIHHigh level input voltage25.5V
VITHysteresis voltageBy design and characterization30500V
IILGLow level input currentEN = Low-505µA
RENInternal Pulldown resistor125350800
LIN PIN
VOHHigh level output voltageLIN recessive, TXD = high, IO = 0 mA, VSUP = 7 V to 36 V0.85 VSUP
LIN recessive, TXD = high, IO = 0 mA, 4 V ≤ VSUP < 7 V3.0 V
VOLLow level output voltageLIN dominant, TXD = low, VSUP = 7 V to 36 V 0.2VSUP
LIN dominant, TXD = low, 4 V ≤ VSUP < 7 V 1.2V
VSUP_NON_OPVSUP where Impact of recessive LIN Bus < 5% (ISO/DIS 17987 Param 11)TXD& RXD open LIN = 4 V to 45 V-0.336V
IBUS_LIMLimiting current (ISO/DIS 17987 Param 12)TXD = 0 V, VLIN = 18 V, RMEAS = 440 Ω, VSUP = 18 V, VBUSdom < 4.518 V See Figure 7-64090200mA
IBUS_PAS_domReceiver leakage current, dominant (ISO/DIS 17987 Param 13)LIN = 0 V, VSUP = 18 V Driver off/recessive See Figure 7-7-1mA
IBUS_PAS_recReceiver leakage current, recessive (ISO/DIS 17987 Param 14)LIN > VSUP, 4 V < VSUP < 36 V Driver off; See Figure 7-820µA
IBUS_NO_GNDLeakage current, loss of ground (ISO/DIS 17987 Param 15)GND = VSUP, 0 V ≤ VLIN ≤ 18 V, VSUP = 12 V; See Figure 7-9-11mA
IBUS_NO_BATLeakage current, loss of supply (ISO/DIS 17987 Param 16)LIN = 36 V, VSUP = GND; See Figure 7-105µA
VBUSdomLow level input voltage (ISO/DIS 17987 Param 17)LIN dominant (including LIN dominant for wake up) See Figure 7-4 and Figure 7-30.4VSUP
VBUSrecHigh level input voltage (ISO/DIS 17987 Param 18)Lin recessive See Figure 7-4 and Figure 7-30.6VSUP
VBUS_CNTReceiver center threshold (ISO/DIS 17987 Param 19)VBUS_CNT = (VIL + VIH)/2 See Figure 7-4 and Figure 7-30.4750.50.525VSUP
VHYSHysteresis voltage (ISO/DIS 17987 Param 20)VHYS = (VIL - VIH) See Figure 7-4 and Figure 7-30.050.175VSUP
VSERIAL_DIODESerial diode LIN term pullup path (ISO/DIS 17987 Param 21)By design and characterization0.40.71V
RRESPONDERPullup resistor to VSUP (ISO/DIS 17987 Param 26)Normal and Standby modes2045 60
IRSLEEPPullup current source to VSUPSleep mode, VSUP = 14 V, LIN = GND-20-2µA
CLINPINCapacitance of LIN pin VSUP = 14 V25pF
Values are for each VSUP pin