SBOS551D March   2011  – January 2025 TLV3011-Q1 , TLV3011B-Q1 , TLV3012-Q1 , TLV3012B-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Open Drain Output (TLV3011-Q1 and TLV3011B-Q1)
      2. 7.4.2 Push-Pull Output (TLV3012-Q1 and TLV3012B-Q1)
      3. 7.4.3 Voltage Reference
      4. 7.4.4 Internal Hysteresis
      5. 7.4.5 TLV3011B-Q1 and TLV3012B-Q1 Fail-Safe inputs
      6. 7.4.6 TLV3011B-Q1 and TLV3012B-Q1 Power On Reset
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adding External Hysteresis
    2. 8.2 Typical Application
      1. 8.2.1 Under-Voltage Detection
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 System Examples
      1. 8.3.1 Power-On Reset
      2. 8.3.2 Relaxation Oscillator
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4 Electrostatic Discharge Caution

TLV3011-Q1 TLV3012-Q1 TLV3011B-Q1 TLV3012B-Q1 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.