SBOS551D March   2011  – January 2025 TLV3011-Q1 , TLV3011B-Q1 , TLV3012-Q1 , TLV3012B-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Thermal Information
    4. 5.4 Recommended Operating Conditions
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
      1. 7.4.1 Open Drain Output (TLV3011-Q1 and TLV3011B-Q1)
      2. 7.4.2 Push-Pull Output (TLV3012-Q1 and TLV3012B-Q1)
      3. 7.4.3 Voltage Reference
      4. 7.4.4 Internal Hysteresis
      5. 7.4.5 TLV3011B-Q1 and TLV3012B-Q1 Fail-Safe inputs
      6. 7.4.6 TLV3011B-Q1 and TLV3012B-Q1 Power On Reset
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adding External Hysteresis
    2. 8.2 Typical Application
      1. 8.2.1 Under-Voltage Detection
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 System Examples
      1. 8.3.1 Power-On Reset
      2. 8.3.2 Relaxation Oscillator
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.2.1.2 Detailed Design Procedure

Configure the circuit as shown above. Connect (V+) to VBAT which also powers the microcontroller. Resistors R1 and R2 create the under-voltage alert level of 2.0V. When the battery voltage sags down to 2.0V, the resistor divider voltage crosses VREF, the 1.242V reference threshold of the TLV3012-Q1. This causes the comparator output to transition from a logic high to a logic low. The push-pull output of the TLV3012-Q1 is selected since the comparator operating voltage is shared with the microcontroller which is receiving the under-voltage alert signal.

Equation 2 is derived from the analysis of Figure 8-3.

Equation 2. TLV3011-Q1 TLV3012-Q1 TLV3011B-Q1 TLV3012B-Q1

where

  • R1 and R2 are the resistor values for the resistor divider connected to IN+
  • VBAT is the voltage source that is being monitored for an undervoltage condition.
  • VREF is the falling edge threshold where the comparator output changes state from high to low

Rearranging the equation and solving for R1 yields this result.

Equation 3. TLV3011-Q1 TLV3012-Q1 TLV3011B-Q1 TLV3012B-Q1

For the specific undervoltage detection of 2.0V using the TLV3012-Q1, the following results are calculated.

Equation 4. TLV3011-Q1 TLV3012-Q1 TLV3011B-Q1 TLV3012B-Q1

where

  • R2 is set to 1MΩ
  • VBAT is set to 2.0V
  • VREF is set to1.242V

Choose RTOTAL (R1 + R2) such that the current through the divider is at least 100 times higher than the input bias current (IBIAS). The resistors can have high values to minimize current consumption in the circuit without adding significant error to the resistive divider.