SBVS381A April   2020  – December 2020 TLV767-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagrams
    3. 7.3 Feature Description
      1. 7.3.1 Output Enable
      2. 7.3.2 Dropout Voltage
      3. 7.3.3 Foldback Current Limit
      4. 7.3.4 Undervoltage Lockout (UVLO)
      5. 7.3.5 Output Pulldown
      6. 7.3.6 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Device Functional Mode Comparison
      2. 7.4.2 Normal Operation
      3. 7.4.3 Dropout Operation
      4. 7.4.4 Disabled
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Adjustable Device Feedback Resistors
      2. 8.1.2 Recommended Capacitor Types
      3. 8.1.3 Input and Output Capacitor Requirements
      4. 8.1.4 Reverse Current
      5. 8.1.5 Feed-Forward Capacitor (CFF)
      6. 8.1.6 Power Dissipation (PD)
      7. 8.1.7 Estimating Junction Temperature
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Transient Response
        2. 8.2.2.2 Choose Feedback Resistors
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Device Nomenclature
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Support Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DRB|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.1.4 Reverse Current

Excessive reverse current can damage this device. Reverse current flows through the intrinsic body diode of the pass transistor instead of the normal conducting channel. At high magnitudes, this current flow degrades the long-term reliability of the device.

Conditions where reverse current can occur are outlined in this section, all of which can exceed the absolute maximum rating of VOUT ≤ VIN + 0.3 V.

  • If the device has a large COUT and the input supply collapses with little or no load current
  • The output is biased when the input supply is not established
  • The output is biased above the input supply

If reverse current flow is expected in the application, external protection is recommended to protect the device. Reverse current is not limited in the device, so external limiting is required if extended reverse voltage operation is anticipated.

Figure 8-1 shows one approach for protecting the device.

GUID-7E72B42C-F600-4A3A-A3E2-18EECFB41055-low.gif Figure 8-1 Example Circuit for Reverse Current Protection Using a Schottky Diode