SBOS839M March   2017  – December 2024 TLV9061 , TLV9062 , TLV9064

PRODMIX  

  1.   1
  2. Features
  3. Applications
  4. Description
  5.   Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information: TLV9061
    5. 5.5  Thermal Information: TLV9061S
    6. 5.6  Thermal Information: TLV9062
    7. 5.7  Thermal Information: TLV9062S
    8. 5.8  Thermal Information: TLV9064
    9. 5.9  Thermal Information: TLV9064S
    10. 5.10 Electrical Characteristics
    11. 5.11 Typical Characteristics
  8. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Rail-to-Rail Input
      2. 6.3.2 Rail-to-Rail Output
      3. 6.3.3 EMI Rejection
      4. 6.3.4 Overload Recovery
      5. 6.3.5 Shutdown Function
    4. 6.4 Device Functional Modes
  9. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Typical Low-Side Current Sense Application
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
      4. 7.2.4 Application Curve
    3. 7.3 Power Supply Recommendations
      1. 7.3.1 Input and ESD Protection
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  10. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  11. Revision History
  12. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrical Characteristics

For VS (Total Supply Voltage) = (V+) – (V–) = 1.8V to 5.5V at TA = 25°C, RL = 10 kΩ connected to VS / 2, VCM = VS / 2, and VOUT = VS / 2 (unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
OFFSET VOLTAGE
VOSInput offset voltageVS = 5V±0.3±1.6mV
VS = 5V, TA = –40°C to 125°C±2
dVOS/dTDriftVS = 5V, TA = –40°C to 125°C±0.53µV/°C
PSRRPower-supply rejection ratioVS = 1.8V – 5.5V, VCM = (V–)±7±80µV/V
Channel separation, DCAt DC100dB
INPUT VOLTAGE RANGE
VCMCommon-mode voltage rangeVS = 1.8V to 5.5V(V–) – 0.1(V+) + 0.1V
CMRRCommon-mode rejection ratioVS = 5.5V, (V–) – 0.1V < VCM < (V+) – 1.4V,
TA = –40°C to 125°C
80103dB
VS = 5.5V, VCM = –0.1V to 5.6V,
TA = –40°C to 125°C
5787
VS = 1.8V, (V–) – 0.1V < VCM < (V+) – 1.4V,
TA = –40°C to 125°C
88
VS = 1.8V, VCM = –0.1V to 1.9V,
TA = –40°C to 125°C
81
INPUT BIAS CURRENT
IBInput bias current±0.5pA
IOSInput offset current±0.05pA
NOISE
EnInput voltage noise (peak-to-peak)VS = 5V, f = 0.1Hz to 10Hz4.77µVPP
enInput voltage noise densityVS = 5V, f = 10kHz10nV/√ Hz
VS = 5V, f = 1kHz16
inInput current noise densityf = 1kHz23fA/√ Hz
INPUT CAPACITANCE
CIDDifferential2pF
CICCommon-mode4pF
OPEN-LOOP GAIN
AOLOpen-loop voltage gainVS = 1.8V, (V–) + 0.04V < VO < (V+) – 0.04V,
RL = 10kΩ
100dB
VS = 5.5V, (V–) + 0.05V < VO < (V+) – 0.05V,
RL = 10kΩ
104130
VS = 1.8V, (V–) + 0.06V < VO < (V+) – 0.06V,
RL = 2kΩ
100
VS = 5.5V, (V–) + 0.15V < VO < (V+) – 0.15V,
RL = 2kΩ
130
FREQUENCY RESPONSE
GBPGain bandwidth productVS = 5V, G = +110MHz
φmPhase marginVS = 5V, G = +155°
SRSlew rateVS = 5V, G = +16.5V/µs
tSSettling timeTo 0.1%, VS = 5V, 2V step , G = +1, CL = 100pF0.5µs
To 0.01%, VS = 5V, 2V step,
G = +1, CL = 100pF
1
tOROverload recovery timeVS = 5V, VIN × gain > VS0.2µs
THD + NTotal harmonic distortion + noise(1)VS = 5.5V, VCM = 2.5V, VO = 1VRMS, G = +1,
f = 1kHz
0.0008%
OUTPUT
VOVoltage output swing from supply railsVS = 5.5V, RL = 10kΩ20mV
VS = 5.5V, RL = 2kΩ60
ISCShort-circuit currentVS = 5V±50mA
ZOOpen-loop output impedanceVS = 5V, f = 10MHz100Ω
POWER SUPPLY
IQQuiescent current per amplifierVS = 5.5V, IO = 0mA538750µA
VS = 5.5V, IO = 0mA, TA = –40°C to 125°C800
SHUTDOWN
IQSDQuiescent current per amplifierVS = 1.8V to 5.5V, all amplifiers disabled,
SHDN = Low
0.51.5µA
ZSHDNOutput impedance during shutdownVS = 1.8V to 5.5V, amplifier disabled10 || 8GΩ || pF
VSHDN_THR_HIHigh level voltage shutdown threshold (amplifier enabled)VS = 1.8V to 5.5V(V–) + 0.9V(V–) + 1.1VV
VSDHN_THR_LOLow level voltage shutdown threshold (amplifier disabled)VS = 1.8V to 5.5V(V–) + 0.2V(V–) + 0.7VV
tONAmplifier enable time (shutdown)(2)VS = 1.8V to 5.5V, full shutdown; G = 1,
VOUT = 0.9 × VS / 2, RL connected to V–
10µs
tOFFAmplifier disable time(2)VS = 1.8V to 5.5V, G = 1, VOUT = 0.1 × VS / 2,
RL connected to V–
0.6µs
SHDN pin input bias current (per pin)VS = 1.8V to 5.5V, V+ ≥ SHDN ≥ (V+) – 0.8V130pA
VS = 1.8V to 5.5V, V– ≤ SHDN ≤ V– + 0.8V40
Third-order filter; bandwidth = 80kHz at –3dB.
Disable time (tOFF) and enable time (tON) are defined as the time interval between the 50% point of the signal applied to the SHDN pin and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level.