SCDS392C November   2018  – February 2024 TMUX1104

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics (VDD = 5V ±10 %)
    6. 5.6 Electrical Characteristics (VDD = 3.3V ±10 %)
    7. 5.7 Electrical Characteristics (VDD = 1.8V ±10 %)
    8. 5.8 Electrical Characteristics (VDD = 1.2V ±10 %)
    9. 5.9 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  Transition Time
    5. 6.5  Break-Before-Make
    6. 6.6  tON(EN) and tOFF(EN)
    7. 6.7  Charge Injection
    8. 6.8  Off Isolation
    9. 6.9  Crosstalk
    10. 6.10 Bandwidth
  8. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Feature Description
      1. 7.2.1 Bidirectional Operation
      2. 7.2.2 Rail to Rail Operation
      3. 7.2.3 1.8V Logic Compatible Inputs
      4. 7.2.4 Fail-Safe Logic
      5. 7.2.5 Ultra-low Leakage Current
      6. 7.2.6 Ultra-low Charge Injection
    3. 7.3 Device Functional Modes
    4. 7.4 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGS|10
  • DQA|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics (VDD = 5V ±10 %)

at TA = 25°C, VDD = 5V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = 0V to VDD
ISD = 10 mA
Refer to On-Resistance		 25°C   2 4 Ω
–40°C to +85°C     4.5 Ω
–40°C to +125°C     4.9 Ω
ΔRON On-resistance matching between channels VS = 0V to VDD
ISD = 10 mA
Refer to On-Resistance		 25°C   0.13 Ω
–40°C to +85°C   0.4 Ω
–40°C to +125°C   0.5 Ω
RON FLAT On-resistance flatness VS = 0V to VDD
ISD = 10 mA
Refer to On-Resistance		 25°C   0.85 Ω
–40°C to +85°C   1.6 Ω
–40°C to +125°C   1.6 Ω
IS(OFF) Source off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-Leakage Current		 25°C –0.08 ±0.005 0.08 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.9 0.9 nA
ID(OFF) Drain off leakage current(1) VDD = 5V
Switch Off
VD = 4.5V / 1.5V
VS = 1.5V / 4.5V
Refer to Off-Leakage Current		 25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.75 0.75 nA
–40°C to +125°C –3.5 3.5 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 2.5V
Refer to On-Leakage Current		 25°C –0.025 ±0.003 0.025 nA
–40°C to +85°C –0.3 0.3 nA
–40°C to +125°C –0.95 0.95 nA
ID(ON)
IS(ON)		 Channel on leakage current VDD = 5V
Switch On
VD = VS = 4.5V / 1.5V
Refer to On-Leakage Current		 25°C –0.1 ±0.01 0.1 nA
–40°C to +85°C –0.75 0.75 nA
–40°C to +125°C –3.5 3.5 nA
LOGIC INPUTS (EN, A0, A1)
VIH Input logic high  –40°C to +125°C 1.49   5.5 V
VIL Input logic low  –40°C to +125°C 0   0.87 V
IIH
IIL		 Input leakage current 25°C   ±0.005   µA
IIH
IIL		 Input leakage current –40°C to +125°C     ±0.05 µA
CIN Logic input capacitance 25°C   1 pF
CIN Logic input capacitance –40°C to +125°C   2 pF
POWER SUPPLY
IDD VDD supply current Logic inputs = 0V or 5.5V 25°C   0.005   µA
–40°C to +125°C     1 µA
DYNAMIC CHARACTERISTICS
tTRAN Transition time between channels VS = 3V
RL = 200Ω, CL = 15 pF
Refer to Transition Time		 25°C   14   ns
–40°C to +85°C     18 ns
–40°C to +125°C     19 ns
tOPEN (BBM) Break before make time VS = 3V
RL = 200Ω, CL = 15 pF
Refer to Break-Before-Make		 25°C   8   ns
–40°C to +85°C 1     ns
–40°C to +125°C 1     ns
tON(EN) Enable turn-on time VS = 3V
RL = 200Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN)		 25°C   12   ns
–40°C to +85°C     17 ns
–40°C to +125°C     18 ns
tOFF(EN) Enable turn-off time VS = 3V
RL = 200Ω, CL = 15 pF
Refer to tON(EN) and tOFF(EN)		 25°C   5   ns
–40°C to +85°C   8 ns
–40°C to +125°C   9 ns
QC Charge Injection VS = 1V
RS = 0Ω, CL = 1 nF
Refer to Charge Injection		 25°C 1.5 pC
OISO Off Isolation RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Off Isolation		 25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Off Isolation		 25°C   –45   dB
XTALK Crosstalk RL = 50 Ω, CL = 5 pF
f = 1 MHz
Refer to Crosstalk		 25°C   –65   dB
RL = 50 Ω, CL = 5 pF
f = 10 MHz
Refer to Crosstalk		 25°C   –45   dB
BW Bandwidth RL = 50 Ω, CL = 5 pF
Refer to Bandwidth		 25°C   155   MHz
CSOFF Source off capacitance f = 1 MHz 25°C   6   pF
CDOFF Drain off capacitance f = 1 MHz 25°C   28   pF
CSON
CDON		 On capacitance f = 1 MHz 25°C   35   pF
(1) When VS is 4.5V, VD is 1.5V, and vice versa.