SCDS456 January   2024 TMUX7212M

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Thermal Information
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Source or Drain Continuous Current
    6.     ±15 V Dual Supply: Electrical Characteristics 
    7.     ±15 V Dual Supply: Switching Characteristics 
    8.     ±20 V Dual Supply: Electrical Characteristics
    9.     ±20 V Dual Supply: Switching Characteristics
    10. 44  V Single Supply: Electrical Characteristics 
    11. 44  V Single Supply: Switching Characteristics 
    12. 12  V Single Supply: Electrical Characteristics 
    13. 12  V Single Supply: Switching Characteristics 
    14. 6.6 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1  On-Resistance
    2. 7.2  Off-Leakage Current
    3. 7.3  On-Leakage Current
    4. 7.4  tON and tOFF Time
    5. 7.5  tON (VDD) Time
    6. 7.6  Propagation Delay
    7. 7.7  Charge Injection
    8. 7.8  Off Isolation
    9. 7.9  Channel-to-Channel Crosstalk
    10. 7.10 Bandwidth
    11. 7.11 THD + Noise
    12. 7.12 Power Supply Rejection Ratio (PSRR)
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Rail-to-Rail Operation
      3. 8.3.3 1.8V Logic Compatible Inputs
      4. 8.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 8.3.5 Fail-Safe Logic
      6. 8.3.6 Latch-Up Immune
      7. 8.3.7 Ultra-Low Charge Injection
    4. 8.4 Device Functional Modes
    5. 8.5 Truth Tables
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application – Switched Gain Amplifier
    3. 9.3 Design Requirements
    4. 9.4 Detailed Design Procedure
    5. 9.5 Power Supply Recommendations
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.5 Power Supply Recommendations

The TMUX7212M device operates across a wide supply range of ±4.5V to ±22 V (4.5V to 44 V in single-supply mode). The device also perform well with asymmetrical supplies such as VDD = 12 V and VSS = –5 V.

Power-supply bypassing improves noise margin and prevents switching noise propagation from the supply rails to other components. Good power-supply decoupling is important to achieve optimum performance. For improved supply noise immunity, use a supply decoupling capacitor ranging from 0.1μF to 10μF at both the VDD and VSS pins to ground. Place the bypass capacitors as close to the power supply pins of the device as possible using low-impedance connections. TI recommends using multi-layer ceramic chip capacitors (MLCCs) that offer low equivalent series resistance (ESR) and inductance (ESL) characteristics for power-supply decoupling purposes. For very sensitive systems, or for systems in harsh noise environments, avoiding the use of vias for connecting the capacitors to the device pins may offer superior noise immunity. The use of multiple vias in parallel lowers the overall inductance and is beneficial for connections to ground and power planes. Always ensure the ground (GND) connection is established before supplies are ramped.