SCDS444B February   2023  – May 2024 TMUX7221 , TMUX7222

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Thermal Information
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Source or Drain Continuous Current
    6. 5.6  ±15 V Dual Supply: Electrical Characteristics 
    7. 5.7  ±15 V Dual Supply: Switching Characteristics 
    8. 5.8  ±20 V Dual Supply: Electrical Characteristics
    9. 5.9  ±20 V Dual Supply: Switching Characteristics
    10. 5.10 44 V Single Supply: Electrical Characteristics 
    11. 5.11 44 V Single Supply: Switching Characteristics 
    12. 5.12 12 V Single Supply: Electrical Characteristics 
    13. 5.13 12 V Single Supply: Switching Characteristics 
    14. 5.14 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1  On-Resistance
    2. 6.2  Off-Leakage Current
    3. 6.3  On-Leakage Current
    4. 6.4  tON(EN) and tOFF(EN)
    5. 6.5  tON (VDD) Time
    6. 6.6  Propagation Delay
    7. 6.7  Charge Injection
    8. 6.8  Off Isolation
    9. 6.9  Crosstalk
    10. 6.10 Bandwidth
    11. 6.11 THD + Noise
    12. 6.12 Power Supply Rejection Ratio (PSRR)
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Bidirectional Operation
      2. 7.3.2 Rail-to-Rail Operation
      3. 7.3.3 1.8 V Logic Compatible Inputs
      4. 7.3.4 Integrated Pull-Down Resistor on Logic Pins
      5. 7.3.5 Fail-Safe Logic
      6. 7.3.6 Latch-Up Immune
      7. 7.3.7 Ultra-Low Charge Injection
    4. 7.4 Device Functional Modes
    5. 7.5 Truth Tables
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Switched Gain Amplifier - Discrete PGA
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGS|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.6 Latch-Up Immune

Latch-Up is a condition where a low impedance path is created between a supply pin and ground. This condition is caused by a trigger (current injection or overvoltage), but once activated, the low impedance path remains even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic damage due to excessive current levels. The Latch-Up condition typically requires a power cycle to eliminate the low impedance path.

The TMUX722x family of devices are constructed on Silicon on Insulator (SOI) based process where an oxide layer is added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures from forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events due to overvoltage or current injections. The latch-up immunity feature allows the TMUX722x family of switches and multiplexers to be used in harsh environments.