SCDS434B October   2021  – March 2023 TMUX8211 , TMUX8212 , TMUX8213

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings: TMUX821x Devices
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions: TMUX821x Devices
    4. 7.4  Source of Drain Continuous Current
    5. 7.5  Source of Drain Pulse Current
    6. 7.6  Thermal Information
    7. 7.7  Electrical Characteristics (Global): TMUX821x Devices
    8. 7.8  Electrical Characteristics (±15-V Dual Supply)
    9. 7.9  Electrical Characteristics (±36-V Dual Supply)
    10. 7.10 Electrical Characteristics (±50-V Dual Supply)
    11. 7.11 Electrical Characteristics (72-V Single Supply)
    12. 7.12 Electrical Characteristics (100-V Single Supply)
    13. 7.13 Switching Characteristics: TMUX821x Devices
    14. 7.14 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 On-Resistance
    2. 8.2 Off-Leakage Current
    3. 8.3 On-Leakage Current
    4. 8.4 Device Turn-On and Turn-Off Time
    5. 8.5 Charge Injection
    6. 8.6 Off Isolation
    7. 8.7 Crosstalk
    8. 8.8 Bandwidth
    9. 8.9 THD + Noise
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 Bidirectional Operation
      2. 9.3.2 Flat On-Resistance
      3. 9.3.3 Protection Features
        1. 9.3.3.1 Fail-Safe Logic
        2. 9.3.3.2 ESD Protection
        3. 9.3.3.3 Latch-Up Immunity
      4. 9.3.4 1.8 V Logic Compatible Inputs
      5. 9.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 9.4 Device Functional Modes
      1. 9.4.1 Normal Mode
      2. 9.4.2 Truth Tables
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 Documentation Support
      1. 13.1.1 Related Documentation
    2. 13.2 Receiving Notification of Documentation Updates
    3. 13.3 Support Resources
    4. 13.4 Trademarks
    5. 13.5 Electrostatic Discharge Caution
    6. 13.6 Glossary
  14. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.1 Absolute Maximum Ratings: TMUX821x Devices

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VDD–VSS Supply voltage 110 V
VDD –0.5 110 V
VSS –110 0.5 V
VSELx Logic control input pin voltage (SELx) –0.5 50 V
ISELx Logic control input pin current (SELx) –30 30 mA
VS or VD Source or drain voltage (Sx, Dx) VSS–2 VDD+2 V
IDC Source or drain continuous current (Sx, Dx) –200 200 mA
IIK(2) Diode clamp current at 85°C –100 100 mA
Diode clamp current at 125°C –15 15 mA
Tstg Storage temperature –65 150 °C
TA Ambient temperature –55 150 °C
TJ Junction temperature 150 °C
Ptot(3) Total power dissipation (QFN) 1680 mW
Ptot(4) Total power dissipation (TSSOP) 720 mW
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) Signal path pins are diode-clamped to the power-supply rails. Over voltage signals must be voltage and current limited to maximum ratings.
(3) For QFN package: Ptot derates linearly above TA = 70°C by 24.0 mW/°C
(4) For TSSOP package: Ptot derates linearly above TA = 70°C by 10.5 mW/°C