SLASEY7A June 2024 – November 2024 TMUXHS4612
PRODUCTION DATA
The TMUXHS4612 is based on proprietary TI technology which uses FET switches driven by a high-voltage generated from an integrated charge-pump to achieve a low on-state resistance. The TMUXHS4612's low power technology uses only 800µA in active and just 32µA in powerdown (EN = L) mode. The device has integrated ESD that can support up to 1.5kV Human-Body Model (HBM) and 750V Charge Device Model (CDM). The TMUXHS4612 also has a special feature that prevents the device from back-powering when the VCC supply is not available and an analog signal is applied on the I/O pin. In this situation this special feature prevents leakage current in the device. The TMUXHS4612 is not designed for passing signals with negative swings.