DATA SHEET
TPA2012D2 2.1-W/Channel Stereo Filter-Free Class-D Audio Power Amplifier
1 Features
- Output Power By Package:
- WQFN:
- 2.1 W/Ch Into 4 Ω at 5 V
- 1.4 W/Ch Into 8 Ω at 5 V
- 720 mW/Ch Into 8 Ω at 3.6 V
- DSBGA:
- 1.2 W/Ch Into 4 Ω at 5 V
(Thermally Limited) - 1.3 W/Ch Into 8 Ω at 5 V
- 720 mW/Ch Into 8 Ω at 3.6 V
- 1.2 W/Ch Into 4 Ω at 5 V
- WQFN:
- Only Two External Components Required
- Power Supply Range: 2.5 V to 5.5 V
- Independent Shutdown Control for Each Channel
- Selectable Gain of 6, 12, 18, and 24 dB
- Internal Pulldown Resistor on Shutdown Pins
- High PSRR: 77 dB at 217 Hz
- Fast Start-Up Time (3.5 ms)
- Low Supply Current
- Low Shutdown Current
- Short-Circuit and Thermal Protection
- Space-Saving Packages
- 2.01-mm × 2.01-mm NanoFree™ DSBGA (YZH)
- 4-mm × 4-mm Thin WQFN (RTJ) With PowerPAD™
2 Applications
- Wireless or Cellular Handsets and PDAs
- Portable DVD Players
- Notebook PCs
- Portable Radios
- Portable Gaming
- Educational Toys
- USB Speakers
3 Description
The TPA2012D2 is a stereo, filter-free, Class-D audio amplifier (Class-D amp) available in a DSBGA or WQFN package. The TPA2012D2 only requires two external components for operation.
The TPA2012D2 features independent shutdown controls for each channel. The gain can be selected to 6, 12, 18, or 24 dB using the G0 and G1 gain select pins. High PSRR and differential architecture provide increased immunity to noise and RF rectification. In addition to these features, a fast start-up time and small package size make the TPA2012D2 class-D amp an ideal choice for both cellular handsets and PDAs.
The TPA2012D2 is capable of driving 1.4 W/Ch at
5 V or 720 mW/Ch at 3.6 V into 8 Ω. The TPA2012D2 is also capable of driving 4 Ω. The TPA2012D2 is thermally limited in DSBGA and may not achieve
2.1 W/Ch for 4 Ω. The maximum output power in the DSBGA is determined by the ability of the circuit board to remove heat. Figure 33 shows thermally limited region of the DSBGA in relation to the WQFN package. The TPA2012D2 provides thermal and short-circuit protection.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPA2012D2 | DSBGA (16) | 2.01 mm × 2.01 mm |
| WQFN (20) | 4.00 mm × 4.00 mm |
- For all available packages, see the orderable addendum at the end of the data sheet.
Simplified Application Schematic
4 Revision History
Changes from E Revision (September 2016) to F Revision
- Switched the BODY SIZE values in the Device Information table: DSBGA From: 4.00 mm × 4.00 mm To: 2.01 mm × 2.01 mm and WQFN From: 2.01 mm × 2.01 mm To: 4.00 mm × 4.00 mmGo
Changes from D Revision (June 2008) to E Revision
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sectionGo
- Deleted Available-Options table; see POA at the end of the data sheetGo
- Deleted previous application schematics: Typical Application Circuit (previously Figure 33), TPA2012D2 Application Schematic With Differential Input and Input Capacitors (previously Figure 34), and TPA2012D2 Application Schematic With Single-Ended Input (previously Figure 35)Go
5 Device Comparison Table
| DEVICE NO. | SPEAKER AMP TYPE | SPECIAL FEATURE | OUTPUT POWER (M) | PSRR (dB) |
|---|---|---|---|---|
| TPA2012D2 | Class D | — | 2.1 | 71 |
| TPA2016D2 | Class D | AGC/DRC | 2.8 | 80 |
| TPA2026D2 | Class D | AGC/DRC | 3.2 | 80 |
6 Pin Configuration and Functions
YZH Package
16-Pin DSBGA
Top View
RTJ Package
20-Pin WQFN
Top View
Pin Functions
| PIN | I/O | DESCRIPTION | ||
|---|---|---|---|---|
| NAME | DSBGA | WQFN | ||
| AGND | C3 | 18 | I | Analog ground |
| AVDD | D2 | 9 | I | Analog supply (must be same voltage as PVDD) |
| G0 | C2 | 15 | I | Gain select (LSB) |
| G1 | B2 | 1 | I | Gain select (MSB) |
| INL– | B1 | 19 | I | Left channel negative input |
| INL+ | A1 | 20 | I | Left channel positive input |
| INR– | C1 | 17 | I | Right channel negative input |
| INR+ | D1 | 16 | I | Right channel positive input |
| NC | — | 6, 10 | — | No internal connection |
| OUTL– | A4 | 5 | O | Left channel negative differential output |
| OUTL+ | A3 | 2 | O | Left channel positive differential output |
| OUTR– | D4 | 11 | O | Right channel negative differential output |
| OUTR+ | D3 | 14 | O | Right channel positive differential output |
| PGND | C4 | 4, 12 | I | Power ground |
| PVDD | A2 | 3, 13 | I | Power supply (must be same voltage as AVDD) |
| SDL | B4 | 7 | I | Left channel shutdown terminal (active low) |
| SDR | B3 | 8 | I | Right channel shutdown terminal (active low) |
| Thermal Pad | — | — | — | Connect the thermal pad of WQFN package to PCB GND |
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Supply voltage, VSS (AVDD, PVDD) | Active mode | –0.3 | 6 | V |
| Shutdown mode | –0.3 | 7 | ||
| Input voltage, VI | –0.3 | VDD + 0.3 | V | |
| Continuous total power dissipation | See Dissipation Rating Table | |||
| Operating junction temperature, TJ | –40 | 150 | °C | |
| Storage temperature, Tstg | –65 | 150 | °C | |
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7.2 ESD Ratings
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
| Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| VSS | Supply voltage, AVDD, PVDD | 2.5 | 5.5 | V |
| VIH | High-level input voltage, SDL, SDR, G0, G1 | 1.3 | V | |
| VIL | Low-level input voltage, SDL, SDR, G0, G1 | 0.35 | V | |
| TA | Operating free-air temperature | –40 | 85 | °C |
7.4 Thermal Information
| THERMAL METRIC(1) | TPA2012D2 | UNIT | ||
|---|---|---|---|---|
| YZH (DSBGA) | RTJ (WQFN) | |||
| 16 PINS | 20 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 71.4 | 34.6 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 0.4 | 34.3 | °C/W |
| RθJB | Junction-to-board thermal resistance | 14 | 11.5 | °C/W |
| ψJT | Junction-to-top characterization parameter | 1.8 | 0.4 | °C/W |
| ψJB | Junction-to-board characterization parameter | 13.3 | 11.6 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | — | 3.2 | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
7.5 Electrical Characteristics
TA = 25°C (unless otherwise noted)| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| |VOO| | Output offset voltage (measured differentially) | Inputs ac grounded, AV = 6 dB, VDD = 2.5 to 5.5 V | 5 | 25 | mV | ||
| PSRR | Power supply rejection ratio | VDD = 2.5 to 5.5 V | –75 | –55 | dB | ||
| Vicm | Common-mode input voltage | 0.5 | VDD – 0.8 | V | |||
| CMRR | Common-mode rejection ration | Inputs shorted together, VDD = 2.5 to 5.5 V | –69 | –50 | dB | ||
| |IIH| | High-level input current | VDD = 5.5 V, VI = VDD | 50 | µA | |||
| |IIL| | Low-level input current | VDD = 5.5 V, VI = 0 V | 5 | µA | |||
| IDD | Supply current | VDD = 5.5 V, no load or output filter | 6 | 9 | mA | ||
| VDD = 3.6 V, no load or output filter | 5 | 7.5 | |||||
| VDD = 2.5 V, no load or output filter | 4 | 6 | |||||
| Shutdown mode | 1.5 | µA | |||||
| rDS(on) | Static drain-source on-state resistance | VDD = 5.5 V | 500 | mΩ | |||
| VDD = 3.6 V | 570 | ||||||
| VDD = 2.5 V | 700 | ||||||
| Output impedance in shutdown mode | V(SDR, SDL)= 0.35 V | 2 | kΩ | ||||
| f(sw) | Switching frequency | VDD = 2.5 V to 5.5 V | 250 | 300 | 350 | kHz | |
| Closed-loop voltage gain | G0, G1 = 0.35 V | 5.5 | 6 | 6.5 | dB | ||
| G0 = VDD, G1 = 0.35 V | 11.5 | 12 | 12.5 | ||||
| G0 = 0.35 V, G1 = VDD | 17.5 | 18 | 18.5 | ||||
| G0, G1 = VDD | 23.5 | 24 | 24.5 | ||||
| OPERATING CHARACTERISTICS, RL = 8 Ω | |||||||
| PO | Output power (per channel) | RL = 8 Ω | VDD = 5 V, f = 1 kHz, THD = 10% |
1.4 | W | ||
| VDD = 3.6 V, f = 1 kHz, THD = 10% |
0.72 | ||||||
| RL = 4 Ω | VDD = 5 V, f = 1 kHz, THD = 10% |
2.1 | |||||
| THD+N | Total harmonic distortion plus noise | PO = 1 W, VDD = 5 V, AV = 6 dB, f = 1 kHz | 0.14% | ||||
| PO = 0.5 W, VDD = 5 V, AV = 6 dB, f = 1 kHz | 0.11% | ||||||
| Channel crosstalk | f = 1 kHz | –85 | dB | ||||
| kSVR | Supply ripple rejection ratio | VDD = 5 V, AV = 6 dB, f = 217 Hz | –77 | dB | |||
| VDD = 3.6 V, AV = 6 dB, f = 217 Hz | –73 | ||||||
| CMRR | Common mode rejection ratio | VDD = 3.6 V, VIC = 1 Vpp, f = 217 Hz | –69 | dB | |||
| Input impedance | Av = 6 dB | 28.1 | kΩ | ||||
| Av = 12 dB | 17.3 | ||||||
| Av = 18 dB | 9.8 | ||||||
| Av = 24 dB | 5.2 | ||||||
| Start-up time from shutdown | VDD = 3.6 V | 3.5 | ms | ||||
| Vn | Output voltage noise | VDD = 3.6 V, f = 20 to 20 kHz, inputs are ac grounded, AV = 6 dB |
No weighting | 35 | µV | ||
| A weighting | 27 | ||||||
7.6 Dissipation Rating Table
| PACKAGE | TA = 25°C POWER RATING(1) |
DERATING FACTOR |
TA = 75°C POWER RATING |
TA = 85°C POWER RATING |
|---|---|---|---|---|
| RTJ | 5.2 W | 41.6 mW/°C | 3.12 W | 2.7 W |
| YZH | 1.2 W | 9.12 mW/°C | 690 mW | 600 mW |
(1) This data was taken using 2-oz trace and copper pad that is soldered directly to a JEDEC standard 4-layer 3 in × 3 in PCB.
7.7 Typical Characteristics
Figure 1. Total Harmonic Distortionvs Output Power
Figure 3. Total Harmonic Distortionvs Output Power
Figure 5. Total Harmonic Distortion vs Frequency
Figure 7. Total Harmonic Distortion vs Frequency
Figure 9. Total Harmonic Distortion vs Frequency
Figure 11. Supply Current vs Shutdown Voltage
Figure 13. Supply Current vs Output Power
Figure 15. Crosstalk vs Frequency
Figure 17. Power Supply Rejection Ratiovs Frequency
Figure 19. Common-Mode Rejection Ratiovs Common-Mode Input Voltage
Figure 21. GSM Power Supply Rejection vs Time
Figure 23. Supply Voltage Rejection Ratiovs DC Common-Mode Voltage
Figure 25. Power Dissipation vs Output Power
Figure 27. Efficiency vs Output Power
Figure 29. Power Dissipation vs Output Power
Figure 31. Efficiency vs Output Power
Figure 33. Output Power vs Load Resistance
Figure 2. Total Harmonic Distortionvs Output Power
Figure 4. Total Harmonic Distortionvs Output Power
Figure 6. Total Harmonic Distortion vs Frequency
Figure 8. Total Harmonic Distortion vs Frequency
Figure 10. Total Harmonic Distortion vs Frequency
Figure 12. Supply Current vs Supply Voltage
Figure 14. Supply Current vs Output Power
Figure 16. Crosstalk vs Frequency
Figure 18. Power Supply Rejection Ratiovs Frequency
Figure 20. Common-Mode Rejection Ratiovs Frequency
Figure 22. Power Supply Rejection vs Frequency
Figure 24. Power Dissipation vs Output Power
Figure 26. Efficiency vs Output Power
Figure 28. Power Dissipation vs Output Power
Figure 30. Efficiency vs Output Power
Figure 32. Output Power vs Supply Voltage
