SLOS367E August 2003 – November 2015 TPA6211A1
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VDD | Supply voltage | –0.3 | 6 | V | |
VI | Input voltage | –0.3 | VDD + 0.3 | V | |
Continuous total power dissipation | See Dissipation Ratings | ||||
TA | Operating free-air temperature | –40 | 85 | °C | |
TJ | Junction temperature | –40 | 150 | °C | |
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±4000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
VDD | Supply voltage | 2.5 | 5.5 | V | ||
VIH | High-level input voltage | SHUTDOWN | 1.55 | V | ||
VIL | Low-level input voltage | SHUTDOWN | 0.5 | V | ||
TA | Operating free-air temperature | –40 | 85 | °C |
THERMAL METRIC(1) | TPA6211A1 | UNIT | ||
---|---|---|---|---|
DGN (MSOP-PowerPAD™) | DRB (SON) | |||
8 PINS | 8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 62.8 | 49.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 61.9 | 24.8 | °C/W |
RθJB | Junction-to-board thermal resistance | 42.1 | 58.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 3.3 | 1.7 | °C/W |
ψJB | Junction-to-board characterization parameter | 41.9 | 25 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 11 | 8.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
VOS | Output offset voltage (measured differentially) |
VI = 0 V differential, Gain = 1 V/V, VDD = 5.5 V | -9 | 0.3 | 9 | mV | ||
PSRR | Power supply rejection ratio | VDD = 2.5 V to 5.5 V | –85 | –60 | dB | |||
VIC | Common mode input range | VDD = 2.5 V to 5.5 V | 0.5 | VDD-0.8 | V | |||
CMRR | Common mode rejection ratio | VDD = 5.5 V, | VIC = 0.5 V to 4.7 V | -63 | –40 | dB | ||
VDD = 2.5 V, | VIC = 0.5 V to 1.7 V | -63 | –40 | |||||
Low-output swing | RL = 4 Ω, VIN+ = VDD, VIN+ = 0 V, |
Gain = 1 V/V, VIN- = 0 V or VIN- = VDD |
VDD = 5.5 V | 0.45 | V | |||
VDD = 3.6 V | 0.37 | |||||||
VDD = 2.5 V | 0.26 | 0.4 | ||||||
High-output swing | RL = 4 Ω, VIN+ = VDD, VIN- = VDD |
Gain = 1 V/V, VIN- = 0 V or VIN+ = 0 V |
VDD = 5.5 V | 4.95 | V | |||
VDD = 3.6 V | 3.18 | |||||||
VDD = 2.5 V | 2 | 2.13 | ||||||
| IIH | | High-level input current, shutdown | VDD = 5.5 V, | VI = 5.8 V | 58 | 100 | μA | ||
| IIL | | Low-level input current, shutdown | VDD = 5.5 V, | VI = –0.3 V | 3 | 100 | μA | ||
IQ | Quiescent current | VDD = 2.5 V to 5.5 V, no load | 4 | 5 | mA | |||
I(SD) | Supply current | V(SHUTDOWN) ≤ 0.5 V, VDD = 2.5 V to 5.5 V, RL = 4Ω |
0.01 | 1 | μA | |||
Gain | RL = 4Ω | V/V | ||||||
Resistance from shutdown to GND | 100 | kΩ |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
PO | Output power | THD + N= 1%, f = 1 kHz, RL = 3 Ω | VDD = 5 V | 2.45 | W | |||
VDD = 3.6 V | 1.22 | |||||||
VDD = 2.5 V | 0.49 | |||||||
THD + N= 1%, f = 1 kHz, RL = 4 Ω | VDD = 5 V | 2.22 | ||||||
VDD = 3.6 V | 1.1 | |||||||
VDD = 2.5 V | 0.47 | |||||||
THD + N= 1%, f = 1 kHz, RL = 8 Ω | VDD = 5 V | 1.36 | ||||||
VDD = 3.6 V | 0.72 | |||||||
VDD = 2.5 V | 0.33 | |||||||
THD+N | Total harmonic distortion plus noise | f = 1 kHz, RL = 3 Ω | PO = 2 W | VDD = 5 V | 0.045% | |||
PO = 1 W | VDD = 3.6 V | 0.05% | ||||||
PO = 300 mW | VDD = 2.5 V | 0.06% | ||||||
f = 1 kHz, RL = 4 Ω | PO = 1.8 W | VDD = 5 V | 0.03% | |||||
PO = 0.7 W | VDD = 3.6 V | 0.03% | ||||||
PO = 300 mW | VDD = 2.5 V | 0.04% | ||||||
f = 1 kHz, RL = 8 Ω | PO = 1 W | VDD = 5 V | 0.02% | |||||
PO = 0.5 W | VDD = 3.6 V | 0.02% | ||||||
PO = 200 mW | VDD = 2.5 V | 0.03% | ||||||
kSVR | Supply ripple rejection ratio | VDD = 3.6 V, Inputs ac-grounded with Ci = 2 μF, V(RIPPLE) = 200 mVpp |
f = 217 Hz | -80 | dB | |||
f = 20 Hz to 20 kHz | -70 | |||||||
SNR | Signal-to-noise ratio | VDD = 5 V, PO = 2 W, RL = 4 Ω | 105 | dB | ||||
Vn | Output voltage noise | VDD = 3.6 V, f = 20 Hz to 20 kHz, Inputs ac-grounded with Ci = 2 μF |
No weighting | 15 | μVRMS | |||
A weighting | 12 | |||||||
CMRR | Common mode rejection ratio | VDD = 3.6 V, VIC = 1 Vpp | f = 217 Hz | -65 | dB | |||
ZI | Input impedance | 38 | 40 | 44 | kΩ | |||
Start-up time from shutdown | VDD = 3.6 V, No CBYPASS | 4 | μs | |||||
VDD = 3.6 V, CBYPASS = 0.1 μF | 27 | ms |
PACKAGE | TA ≤ 25°C POWER RATING |
DERATING FACTOR(1) |
TA= 70°C POWER RATING |
TA= 85°C POWER RATING |
---|---|---|---|---|
DGN | 2.13 W | 17.1 mW/°C | 1.36 W | 1.11 W |
DRB | 2.7 W | 21.8 mW/°C | 1.7 W | 1.4 W |
FIGURE | |||
---|---|---|---|
PO | Output power | vs Supply voltage | Figure 1 |
vs Load resistance | Figure 2 | ||
PD | Power dissipation | vs Output power | Figure 3, Figure 4 |
THD+N | Total harmonic distortion + noise | vs Output power | Figure 5, Figure 6, Figure 7 |
vs Frequency | Figure 8, Figure 9, Figure 10, Figure 11, , Figure 12 | ||
vs Common-mode input voltage | Figure 13 | ||
KSVR | Supply voltage rejection ratio | vs Frequency | Figure 14, Figure 15, Figure 16, Figure 17 |
KSVR | Supply voltage rejection ratio | vs Common-mode input voltage | Figure 18 |
GSM Power supply rejection | vs Time | Figure 19 | |
GSM Power supply rejection | vs Frequency | Figure 20 | |
CMRR | Common-mode rejection ratio | vs Frequency | Figure 21 |
vs Common-mode input voltage | Figure 22 | ||
Closed loop gain/phase | vs Frequency | Figure 23 | |
Open loop gain/phase | vs Frequency | Figure 24 | |
IDD | Supply current | vs Supply voltage | Figure 25 |
vs Shutdown voltage | Figure 26 | ||
Start-up time | vs Bypass capacitor | Figure 27 |