TPD1E6B06 Single-Channel ESD Protection Diode in 0201 Package
- SLLSEB2E February 2012 – October 2015 TPD1E6B06
  
  PRODUCTION DATA.

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DATA SHEET

TPD1E6B06 Single-Channel ESD Protection Diode in 0201 Package

1 Features

IEC 61000-4-2 Level 4 ESD Protection
- ±15-kV Contact Discharge
- ±15-kV Air-Gap Discharge
IEC 61000-4-5 Surge: 3.8 A (8/20 µs)
I/O Capacitance: 6 pF (Typical)
R_DYN: 0.55 Ω (Typical)
DC Breakdown Voltage: ±6 V (Minimum)
Low Leakage Current: 10 nA (Typical)
Low ESD Clamping Voltage
Industrial Temperature Range: –40°C to 125°C
Space-Saving 0201 Footprint
(0.6 mm × 0.3 mm × 0.3 mm)

2 Applications

End Equipment
- Mobile Phones
- Tablets
- Wearables
- Remote Controllers
- Electronic Point of Sale (EPOS)
Interfaces
- Audio Lines
- General-Purpose Input/Output (GPIO)
- Pushbuttons

3 Description

The TPD1E6B06 device is a single-channel TVS diode for electrostatic discharge (ESD) protection in a small 0201 package. The TPD1E6B06 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±15-kV contact discharge and ±15-kV air-gap ESD protection. The device has a back-to-back TVS diode configuration for bipolar or bidirectional signal support. The 6-pF line capacitance is suitable to provide transient voltage suppression circuit protection for a wide range of applications, supporting data rates up to
800 Mbps.

Typical application interfaces for the TPD1E6B06 are audio lines (microphone, earphone, and speakerphone), SD interfacing, keypad or other buttons, as well as the VBUS and ID pins of USB ports. With its industry-standard 0201 package, The TPD1E6B06 has an extremely small footprint, making it ideal for space-saving end equipment like mobile phones, tablets, and wearables.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TPD1E6B06	X2SON (2)	0.60 mm × 0.30 mm

For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

4 Revision History

Changes from D Revision (April 2015) to E Revision

Added test condition frequency to capacitance Go
Added Community Resources Go

Changes from C Revision (February 2013) to D Revision

Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes section, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

Changes from B Revision (August 2012) to C Revision

Updated TOP-SIDE MARKING in the ORDERING INFORMATION table. Go

Changes from A Revision (April 2012) to B Revision

Updated IEC 61000-4-5 (Surge) value in FEATURES.Go
Updated R_DYN value in FEATURES.Go
Updated Absolute Maximum Ratings.Go
Updated TYPICAL CHARACTERISTICS section.Go

Changes from * Revision (February 2012) to A Revision

Changed 0402 Package to 0201 Package in title.Go
Added R_DYN to FEATURES.Go
Changed supporting data rates from 150Mbps to 800Mbps in the DESCRIPTION section..Go
Added I_LEAK parameter to the Electrical Characteristics table.Go
Changed supporting data rates from 150Mbps to 800Mbps in the DESCRIPTION section..Go

5 Pin Configuration and Functions

DPL Package

2-Pin X2SON

(Top View)

Pin Functions

PIN		I/O	DESCRIPTION
1		I/O	ESD-Protected I/O
2		I/O	ESD-Protected I/O

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
V_RWM	Maximum voltage allowed from pin 1 to pin 2, or pin 2 to pin 1	–5	5	V
I_PP	Peak pulse current (tp = 8/20 μs)		3.8	A
P_PP	Peak pulse power (tp = 8/20 μs)		50	W
T_A	Operating temperature	–40	125	°C
T_stg	Storage temperature	–65	155	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2500	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1000
		IEC 61000-4-2 contact discharge	±15000
		IEC 61000-4-2 air-gap discharge	±15000

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2500 V may actually have higher performance.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Pins listed as ±1000 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
Operating free-air temperature, T_A		–40		125	°C
Operating Voltage	Pin 1 to 2 or Pin 2 to 1	–5		5	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPD1E6B06	UNIT
		DPL (X2SON)
		2 PINS
R_θJA	Junction-to-ambient thermal resistance	567.1	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	253.2	°C/W
R_θJB	Junction-to-board thermal resistance	31.6	°C/W
ψ_JT	Junction-to-top characterization parameter	379.1	°C/W
ψ_JB	Junction-to-board characterization parameter	31.6	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse stand-off voltage	I_LEAK = 100 nA			±5	V
I_LEAK	Leakage current	Pin 1 = 5 V, Pin 2 = 0 V			100	nA
V_Clamp1,2	Clamp voltage with ESD strike on pin 1, pin 2 grounded.	I_PP = 1 A, tp = 8/20 μs			10	V
V_Clamp1,2	Clamp voltage with ESD strike on pin 1, pin 2 grounded.	I_PP = 5 A, tp = 8/20 μs			14	V
V_Clamp2,1	Clamp voltage with ESD strike on pin 2, pin 1 grounded.	I_PP = 1 A, tp = 8/20 μs			10	V
V_Clamp2,1	Clamp voltage with ESD strike on pin 2, pin 1 grounded.	I_PP = 5 A, tp = 8/20 μs			14	V
R_DYN	Dynamic resistance	Pin 1 to Pin 2⁽¹⁾		0.55		Ω
R_DYN	Dynamic resistance	Pin 2 to Pin 1⁽¹⁾		0.55		Ω
C_IO	I/O capacitance	V_IO= 2.5 V; ƒ = 1 MHz		6		pF
V_BR1,2	Breakdown voltage, pin 1 to pin 2	I_IO = 1 mA	6			V
V_BR2,1	Breakdown voltage, pin 2 to pin 1	I_IO = 1 mA	6			V

(1) Extraction of R_DYN using least squares fit of TLP characteristics between I_PP = 10 A and I_PP = 20 A.

6.6 Typical Characteristics

Figure 1. ESD Clamp Voltage +8-kV Contact ESD

Figure 3. Clamping Voltage V_TLP = F(I_TLP), PIN1 to PIN2

Figure 5. IV Curve

Figure 7. Surge Graph, Pin 2 to Pin 1

Figure 9. Insertion Loss, Pin 2 to Pin 1

Figure 2. ESD Clamp Voltage –8-kV Contact ESD

Figure 4. Clamping Voltage V_TLP = F(I_TLP), PIN2 to PIN1

Figure 6. Surge Graph, Pin 1 to Pin 2

Figure 8. Insertion Loss, Pin 1 to Pin 2

7 Detailed Description

7.1 Overview

The TPD1E6B06 is a single-channel TVS diode for ESD protection in a small 0201 package. The TPD1E6B06 is rated to dissipate ESD strikes above the maximum level specified in the IEC 61000-4-2 international standard (Level 4), with ±15-kV contact discharge and ±15-kV air-gap ESD protection. The device has a back-to-back TVS diode configuration for bipolar or bidirectional signal support. The 6-pF line capacitance is suitable to provide transient voltage suppression circuit protection for a wide range of applications, supporting data rates up to
800 Mbps. Typical application interfaces for the TPD1E6B06 are audio lines (microphone, earphone, and speakerphone), SD interfacing, keypad or other buttons, as well as the VBUS and ID pins of USB ports.

7.2 Functional Block Diagram

7.3 Feature Description

The TPD1E6B06 is a single-channel TVS diode for ESD protection. This device provides circuit protection from ESD strikes up to ±15-kV contact and ±15-kV air-gap as specified in the IEC 61000-4-2 international standard. The device can also handle up to 3.8 A of surge current (IEC61000-4-5 8/20 μs). The TPD1E6B06 has 6 pF (typical) of capacitance which allows this device to support data rates up to 800 Mbps. Additionally, this low capacitance can even be necessary for an audio signal (for example, if a Class D amplifier is used). The TPD1E6B06 also has a small dynamic resistance of 0.55Ω (typical). This makes the clamping voltage low when it is protecting other circuits, which is crucial for protecting ICs during ESD events. The breakdown is bidirectional so that this protection device is a good fit for GPIO and especially audio lines which carry bidirectional signals. Low leakage current allows the diode to conserve power when working below the V_RWM. The industrial temperature range of –40°C to 125°C makes this ESD device to work well at extensive temperatures in most environments. The space-saving 0201 package is designed for small electronic devices like mobile phones and wearables.

7.4 Device Functional Modes

The TPD1E6B06 is a passive clamp that has low leakage during normal operation and activates whenever the voltage between pin 1 and pin 2 goes above V_RWM or below -V_RWM. During IEC ESD events, transient voltages as high as ±15 kV can be clamped between the two pins. When the voltages on the protected lines fall below the trigger voltage, the device reverts back to the low leakage passive state.