SLLS683F JULY 2006 – October 2015 TPD3E001
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | –0.3 | 7 | V | ||
VI/O | IO voltage tolerance | –0.3 | VCC + 0.3 | V | |
TJ | Junction temperature | 150 | °C | ||
Lead temperature (soldering, 10 s) | 300 | °C | |||
Peak pulse power (tp = 8/20 µs) | 90 | W | |||
Peak pulse power (tp = 8/20 µs) | 5.5 | A | |||
Tstg | Storage temperature | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±15000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 | |||
IEC 61000-4-2 Contact Discharge | ±8000 | |||
IEC 61000-4-2 Air-gap Discharge | ±15000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Operating Voltage | VCC Pin | 0.9 | 5.5 | V | |
IOx Pin | 0 | VCC | |||
Operating free-air temperature, TA | -40 | 85 | °C |
THERMAL METRIC(1) | TPD3E001 | UNIT | |||
---|---|---|---|---|---|
DRL (SOT) | DRS (WSON) | DRY (USON) | |||
5 PINS | 6 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 266.3 | 91.9 | 374.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 111.5 | 106.9 | 223.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 84.5 | 64.8 | 227.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 16.0 | 10.2 | 52.9 | °C/W |
ψJB | Junction-to-board characterization parameter | 84.0 | 64.9 | 224.8 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | 29.9 | 87.5 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP(1) | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VCC | Supply voltage | 0.9 | 5.5 | V | |||
ICC | Supply current | 1 | 100 | nA | |||
VF | Diode forward voltage | IF = 10 mA | 0.65 | 0.95 | V | ||
VBR | Breakdown Voltage | IBR = 10mA | 11 | V | |||
VC | Channel clamp voltage(2) | TA = 25°C, ±15-kV HBM, IF = 10 A |
Positive transients | VCC + 25 | V | ||
Negative transients | –25 | ||||||
TA = 25°C, ±8-kV Contact Discharge (IEC 61000-4-2), IF = 24 A |
Positive transients | VCC + 60 | |||||
Negative transients | –60 | ||||||
TA = 25°C, ±15-kV Air-Gap Discharge (IEC 61000-4-2), IF = 45 A |
Positive transients | VCC + 100 | |||||
Negative transients | –100 | ||||||
Ii/o | Channel leakage current | Vi/o = GND or VCC | ±1 | nA | |||
Cio | Channel input capacitance | VCC = 5 V, bias of VCC/2 | 1.5 | pF | |||
Rdyn | Dynamic resistance | Ii/o = 1 A, between IO pin and ground | 1.2 | Ω |
VCC = 5.0 V |
VCC = 5.5 V |