SLUSDH1B may   2020  – april 2023 TPD3S713-Q1 , TPD3S713A-Q1

PRODUCTION DATA  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 FAULT Response
      2. 8.3.2 Cable Compensation
        1. 8.3.2.1 Design Procedure
      3. 8.3.3 DP and DM Protection
      4. 8.3.4 VBUS OVP Protection
      5. 8.3.5 Output and DP or DM Discharge
      6. 8.3.6 Overcurrent Protection
      7. 8.3.7 Undervoltage Lockout
      8. 8.3.8 Thermal Sensing
      9. 8.3.9 Current-Limit Setting
    4. 8.4 Device Functional Modes
      1. 8.4.1 Device Truth Table (TT)
      2. 8.4.2 Client Mode
      3. 8.4.3 High-Bandwidth Data-Line Switch
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Input Capacitance
        2. 9.2.2.2 Output Capacitance
        3. 9.2.2.3 BIAS Capacitance
        4. 9.2.2.4 Output and BIAS TVS
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  10. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  11. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RVC|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

Layout best practices for the TPD3S713x-Q1 device are listed as follows:

  • Considerations for input and output power traces:
    • Make the power traces as short as possible.
    • Make the power traces as wide as possible.
  • Considerations for input-capacitor traces:
    • For all applications, TI recommends 10-µF and 0.1-µF low-ESR ceramic capacitors, placed close to the IN pin.
  • The resistors attached to the ILIM_HI and ILIM_LO pins of the device have several requirements:
    • TI recommends to use 1% low-temperature-coefficient resistors.
    • The trace routing between these two pins and GND must be as short as possible to reduce parasitic effects on current limit. These traces must not have any coupling to switching signals on the board.
  • Locate all TPD3S713x-Q1 pullup resistors for open-drain outputs close to their connection pin. Pullup resistors must be 100 kΩ.
    • If a particular open-drain output is not used or needed in the system, tie it to GND.
  • ESD considerations:
    • The TPD3S713x-Q1 device has built-in ESD protection for DP_IN and DM_IN. Keep trace lengths minimal from the USB connector to the DP_IN and DM_IN pins on the TPD3S713x-Q1 device, and use minimal vias along the traces.
    • The capacitor on BIAS helps to improve the IEC ESD performance. A 2.2-µF capacitor must be placed close to BIAS, and the current path from BIAS to GND across this capacitor must be as short as possible. Do not use vias along the connection traces.
    • A 10-µF output capacitor must be placed close to the BUS pin and TVS.
    • See the ESD Protection Layout Guide for additional information.
  • TVS Considerations (BUS, DP_IN and DM_IN exceed 18 V):
    • For BUS, a TVS like SMAJ18 must be placed near the BUS pin.
    • For BIAS, a TVS like SMAJ18 must be placed close to the BIAS pin, but behind the 2.2-µF capacitor.
    • The whole path from BUS to GND or BIAS to GND across the TVS must be as short as possible.
  • DP_IN, DM_IN, DP_OUT, and DM_OUT routing considerations
    • Route these traces as microstrips with nominal differential impedance of 90 Ω.
    • Minimize the use of vias on the high-speed data lines.
    • Keep the reference GND plane devoid from cuts or splits above the differential pairs to prevent impedance discontinuities.
    • For more USB 2.0 high-speed D+ and D– differential routing information, see the High Speed USB Platform Design Guideline from Intel.
  • Thermal Considerations:
    • When properly mounted, the thermal-pad package provides significantly greater cooling ability than an ordinary package. To operate at rated power, the thermal pad must be soldered to the board GND plane directly under the device. The thermal pad is at GND potential and can be connected using multiple vias to inner-layer GND. Other planes, such as the bottom side of the circuit board, can be used to increase heat sinking in higher-current applications. See the PowerPad™ Thermally Enhanced Package application report) and (PowerPAD™ Made Easy application brief) for more information on using this thermal pad package.