SLVS816A July   2008  – December 2015 TPD8S009

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 IEC 61000-4-2 ESD Protection
      2. 7.3.2 IEC 61000-4-5 Surge Protection
      3. 7.3.3 I/O Capacitance
      4. 7.3.4 Low Leakage Current
      5. 7.3.5 Supports High-Speed Differential Data Rates
      6. 7.3.6 Ioff Feature
      7. 7.3.7 Industrial Temperature Range
      8. 7.3.8 Easy Straight Through Routing
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Signal Range on High Speed TMDS Pins
        2. 8.2.2.2 Bandwidth on High-Speed TMDS Pins
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Community Resources
    2. 11.2 Trademarks
    3. 11.3 Electrostatic Discharge Caution
    4. 11.4 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VCC Supply voltage –0.3 6 V
VIO IO signal voltage 0 VCC V
TA Characterized free-air operating temperature –40 85 °C
PPP Peak pulse power (tp = 8/20 μs) 25 W
IPP Peak pulse current (tp = 8/20 μs) 2.5 A
Tstg Storage temperature –65 125 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
IEC 61000-4-2 Contact Discharge ±8000
IEC 61000-4-2 Air-Gap Discharge ±9000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VIO Input pin voltage 0 VCC V
TA Operating free-air temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1) TPD8S009 UNIT
DSM (SON)
15 PINS
RθJA Junction-to-ambient thermal resistance 405.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 35.4 °C/W
RθJB Junction-to-board thermal resistance 284.3 °C/W
ψJT Junction-to-top characterization parameter 49.2 °C/W
ψJB Junction-to-board characterization parameter 284.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance n/a °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VRWM Reverse standoff voltage Any IO pin to ground 5.5 V
VBR Breakdown voltage IIO = 1 mA Any IO pin to ground 9 V
IIO IO port current VIO = 3.3 V, VCC = 5 V Any IO pin 0.01 0.1 μA
Ioff Current from IO port to supply pins VIO = 3.3 V, VCC = 5 V Any IO pin 0.01 0.1 μA
VD Diode forward voltage IIO = 8 mA Lower clamp diode 0.6 0.8 0.95 V
RDYN Dynamic resistance I = 1 A Any IO pin 1.1 Ω
CIO IO capacitance VCC = 5 V, VIO = 2.5 V Any IO pin 0.8 pF
ICC Operating supply current VIO = Open, VCC = 5 V VCC pin 0.1 1 μA

6.6 Typical Characteristics

TPD8S009 typ01_lvs816.gif Figure 1. Insertion Loss vs Frequency
TPD8S009 typ03_lvs816.gif Figure 3. IEC Clamping Waveforms
(8-kV Contact)
TPD8S009 typ02_lvs816.gif Figure 2. Peak Pulse Waveforms
TPD8S009 typ04_lvs816.gif Figure 4. Figure 3. IEC Clamping Waveforms
(–8-kV Contact)