SLUSEZ3A December 2023 – December 2024 TPS1200-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE | ||||||
| VS | Operating input voltage | 3.5 | 40 | V | ||
| V(S_PORR) | Input supply POR threshold, rising | 1.78 | 2.5 | 3.27 | V | |
| V(S_PORF) | Input supply POR threshold, falling | 1.71 | 2.36 | 3.1 | V | |
| Total System Quiescent current, I(GND) | V(EN/UVLO) = 2 V | 46 | 55 | µA | ||
| Total System Quiescent current, I(GND) | V(EN/UVLO) = 2 V, –40°C ≤ TJ ≤ +85°C | 53 | µA | |||
| I(SHDN) | SHDN current, I(GND) | V(EN/UVLO) = 0 V, V(SRC) = 0 V | 0.75 | 3.3 | µA | |
| I(REV) | I(VS) leakage current during Reverse Polarity | V(VS) = – 40 V | 11 | 13 | 23 | µA |
| ENABLE, UNDERVOLTAGE LOCKOUT (EN/UVLO), SHORT CIRCUIT COMPARATOR TEST (SCP_TEST) INPUT | ||||||
| V(UVLOR) | UVLO threshold voltage, rising | 1.176 | 1.23 | 1.287 | V | |
| V(UVLOF) | UVLO threshold voltage, falling | 1.09 | 1.136 | 1.184 | V | |
| V(ENR) | Enable threshold voltage for low Iq shutdown, rising | 1 | V | |||
| V(ENF) | Enable threshold voltage for low Iq shutdown, falling | 0.3 | V | |||
| I(EN/UVLO) | Enable input leakage current | V(EN/UVLO) = 12 V | 180 | 310 | nA | |
| V(SCP_TEST_H) | SCP test mode rising threshold | 2 | V | |||
| V(SCP_TEST_L) | SCP test mode falling threshold | 0.8 | V | |||
| I(SCP_TEST) | SCP_TEST input leakage current | 90 | 700 | nA | ||
| OVER VOLTAGE PROTECTION (OV) INPUT | ||||||
| V(OVR) | Overvoltage threshold input, risIng | 1.171 | 1.225 | 1.278 | V | |
| V(OVF) | Overvoltage threshold input, falling | 1.088 | 1.138 | 1.186 | V | |
| I(OV) | OV Input leakage current | 86 | 200 | nA | ||
| CHARGE PUMP (BST–SRC) | ||||||
| I(BST) | Charge Pump Supply current | V(BST – SRC) = 10 V, V(EN/UVLO) = 2 V | 190 | 345 | 466 | µA |
| V(BST_UVLOR) | V(BST – SRC) UVLO voltage threshold, rising | V(EN/UVLO) = 2 V | 8.1 | 9 | 9.9 | V |
| V(BST_UVLOF) | V(BST – SRC) UVLO voltage threshold, falling | V(EN/UVLO) = 2 V | 7.28 | 8.2 | 8.9 | V |
| V(BST–SRC_ON) | Charge Pump Turn ON voltage | V(EN/UVLO) = 2 V | 9.3 | 10.3 | 11.4 | V |
| V(BST–SRC_OFF) | Charge Pump Turn OFF voltage | V(EN/UVLO) = 2 V | 10.4 | 11.6 | 12.8 | V |
| V(BST–SRC) | Charge Pump Voltage at V(VS) = 3.5 V | V(EN/UVLO) = 2 V | 9.1 | 10.5 | 11.62 | V |
| GATE DRIVER OUTPUTS (G1PU, G1PD) | ||||||
| I(PU) | Peak Source Current | 1.69 | A | |||
| I(PD) | Peak Sink Current | 2 | A | |||
| V(G_GOOD) | VGS good threshold | 5.5 | 7 | 8.3 | V | |
| SHORT CIRCUIT PROTECTION (ISCP) | ||||||
| ISCP | SCP Input Bias current | 8.4 | 10 | 12.33 | µA | |
| V(SCP) | SCP threshold | R(ISCP) = 140.5 kΩ | 300 | mV | ||
| R(ISCP) = 28 kΩ | 60 | 75 | 90 | mV | ||
| R(ISCP) = 10.5 kΩ | 32 | 40 | 48 | mV | ||
| R(ISCP) = 500 Ω | 15 | 20 | 25 | mV | ||
| R(ISCP) = Open | 757 | mV | ||||
| V(SCP) | SCP threshold with external bias on ISCP pin | V(ISCP) = 1.405 V | 283 | 300 | 315 | mV |
| V(ISCP) = 280 mV | 67.8 | 75 | 81.7 | mV | ||
| V(ISCP) = 105 mV | 33.3 | 40 | 46.2 | mV | ||
| DELAY TIMER (TMR) | ||||||
| I(TMR_SRC_CB) | TMR source current | 67 | 87 | 104 | µA | |
| I(TMR_SRC_FLT) | TMR source current | 1.4 | 2.73 | 3.8 | µA | |
| I(TMR_SNK) | TMR sink current | 2.17 | 2.8 | 3.4 | µA | |
| V(TMR_SC) | 0.93 | 1.1 | 1.2 | V | ||
| V(TMR_LOW) | 0.15 | 0.21 | 0.25 | V | ||
| N(A-R Count) | 32 | |||||
| INPUT CONTROL (INP), FAULT FLAGS (FLT, FLT_GD) | ||||||
| R(FLT), R(FLT_GD) | FLT, FLT_GD Pull-down resistance | 53 | 85 | 107 | Ω | |
| I(FLT), I(FLT_GD) | FLT, FLT_GD Input leakage current | 0 V ≤ V(FLT) ≤ 20 V | 410 | nA | ||
| V(INP_H) | 2 | V | ||||
| V(INP_L) | 0.8 | V | ||||
| I(INP) | INP Input leakage current | 89 | 206 | nA | ||
| V(CS_SEL_H) | CS_SEL threshold for low side sensing | 1.35 | 2 | V | ||
| V(CS_SEL_L) | CS_SEL threshold for high side sensing | 0.8 | 1.36 | V | ||
| I(CS_SEL) | CS_SEL Input leakage current | 10 | 88.8 | 200 | nA | |