SLUSF08 March   2024 TPS1213-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Charge Pump and Gate Driver Output (VS, G1PU, G1PD, BST, SRC)
      2. 7.3.2 Capacitive Load Driving
        1. 7.3.2.1 Using Low Power Bypass FET (G2 drive) for Load Capacitor Charging
        2. 7.3.2.2 Using Main FET's (G1 drive) Gate Slew Rate Control
      3. 7.3.3 Short-Circuit Protection
        1. 7.3.3.1 Short-Circuit Protection With Auto-Retry
        2. 7.3.3.2 Short-Circuit Protection With Latch-Off
      4. 7.3.4 Device Functional Modes
        1. 7.3.4.1 State Diagram
        2. 7.3.4.2 State Transition Timing Diagram
        3. 7.3.4.3 Power Down
        4. 7.3.4.4 Shutdown Mode
        5. 7.3.4.5 Low Power Mode
        6. 7.3.4.6 Active Mode
      5. 7.3.5 Undervoltage Protection (UVLO)
      6. 7.3.6 Reverse Polarity Protection
      7. 7.3.7 Short-Circuit Protection Diagnosis (SCP_TEST)
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Application Limitations
        1. 8.1.1.1 Short-Circuit Protection Delay
        2. 8.1.1.2 Short-Circuit Protection and Load wakeup Threshold
    2. 8.2 Typical Application 1: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Typical Application 2: Driving Power at all times (PAAT) Loads With Automatic Load Wakeup and Output Bulk Capacitor Charging
      1. 8.3.1 Design Requirements
      2. 8.3.2 External Component Selection
      3. 8.3.3 Application Curves
    4. 8.4 TIDA-020065: Automotive Smart Fuse Reference Design driving Power at all times (PAAT) Loads With Automatic Load Wakeup, Output Bulk Capacitor Charging, Bi-directional Current Sensing and Software I2t
    5. 8.5 Power Supply Recommendations
    6. 8.6 Layout
      1. 8.6.1 Layout Guidelines
      2. 8.6.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information
    1. 11.1 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DGX|19
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.5 Power Supply Recommendations

When the external MOSFETs turn-OFF during the conditions such as INP control, overcurrent protection causing an interruption of the current flow, the input parasitic line inductance generates a positive voltage spike on the input and output parasitic inductance generates a negative voltage spike on the output. The peak amplitude of voltage spikes (transients) depends on the value of inductance in series to the input or output of the device. These transients can exceed the Absolute Maximum Ratings of the device if steps are not taken to address the issue. Typical methods for addressing transients include:

  • Use of a TVS diode and input capacitor filter combination across input to and GND to absorb the energy and dampen the positive transients.
  • Use of a diode or a TVS diode across the output and GND to absorb negative spikes.

The TPS12130-Q1 gets powered from the VS pin. Voltage at this pin must be maintained above V(VS_PORR) level to ensure proper operation. If the input power supply source is noisy with transients, then TI recommends to place a RVS – CVS filter between the input supply line and VS pin to filter out the supply noise. TI recommends an RVS value around 100Ω.

In a case where large di/dt is involved, the system and layout parasitic inductances can generate large differential signal voltages between CS+ and CS– pins. This action can trigger false short-circuit protection and nuisance trips in the system. To overcome such scenario, TI suggests to add a placeholder for RC filter components across the sense resistor (RSNS) and tweak the values during test in the real system. The RC filter components must not be used in current sense designs by MOSFET VDS sensing to avoid impact on the short-circuit protection response.

Figure 8-16 shows the circuit implementation with optional protection components.

GUID-20231130-SS0I-FDRZ-KXMS-JP5ZD35HKGXF-low.svgFigure 8-16 Circuit Implementation With Optional Protection Components For TPS12130-Q1