SLVSE19B June 2019 – November 2021 TPS1HB50-Q1
PRODUCTION DATA
Figure 10-1 shows the schematic of a typical application of the TPS1HB50-Q1. It includes all standard external components. This section of the datasheet discusses the considerations in implementing commonly required application functionality.
COMPONENT | TYPICAL VALUE | PURPOSE |
---|---|---|
RPROT | 15 kΩ | Protect microcontroller and device I/O pins. |
RSNS | 1 kΩ | Translate the sense current into sense voltage. |
CSNS | 100 pF–10 nF | Low-pass filter for the ADC input. |
RGND | 4.7 kΩ | Stabilize GND potential during turn-off of inductive load. |
DGND | BAS21 Diode | Protects device during reverse battery. |
RILIM | 5 kΩ–25 kΩ | Set current limit threshold. |
CVBB1 | 4.7 nF to Device GND | Filtering of voltage transients (for example, ESD, ISO7637-2) and improved emissions. |
CVBB2 | 220 nF to Module GND | Stabilize the input supply and filter out low frequency noise. |
COUT | 220 nF | Filtering of voltage transients (for example, ESD, ISO7637-2). |