SLVS514P April   2004  – August 2024 TPS2041B , TPS2042B , TPS2043B , TPS2044B , TPS2051B , TPS2052B , TPS2053B , TPS2054B

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 General Switch Catalog
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics (All Devices Excluding TPS2051BDBV and TPS2052BD)
    7. 6.7 Typical Characteristics (TPS2051BDBV and TPS2052BD)
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagrams
    3. 8.3 Feature Description
      1. 8.3.1  Power Switch
      2. 8.3.2  Charge Pump
      3. 8.3.3  Driver
      4. 8.3.4  Enable ( ENx)
      5. 8.3.5  Enable (ENx)
      6. 8.3.6  Current Sense
      7. 8.3.7  Overcurrent
        1. 8.3.7.1 Overcurrent Conditions (TPS20x3BD, TPS20x4BD, and TPS20x2BDRB)
        2. 8.3.7.2 Overcurrent Conditions (TPS20x1B & TPS20x2B in D, DGN, and DBV packages)
      8. 8.3.8  Overcurrent ( OCx)
      9. 8.3.9  Thermal Sense
      10. 8.3.10 Undervoltage Lockout
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Universal Serial Bus (USB) Applications
    2. 9.2 Typical Application
      1. 9.2.1 Typical Application (TPS2042B)
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Power-Supply Considerations
          2. 9.2.1.2.2 OC Response
        3. 9.2.1.3 Application Curves
      2. 9.2.2 Host and Self-Powered and Bus-Powered Hubs
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 USB Power-Distribution Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Low-Power Bus-Powered and High-Power Bus-Powered Functions
        3. 9.2.2.3 Application Curves
      3. 9.2.3 Generic Hot-Plug Applications
        1. 9.2.3.1 Design Requirements
        2. 9.2.3.2 Detailed Design Procedure
        3. 9.2.3.3 Application Curves
  11. 10Power Supply Recommendations
    1. 10.1 Undervoltage Lockout (UVLO)
  12. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Power Dissipation
    4. 11.4 Thermal Protection
  13. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Support Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  14. 13Revision History
  15. 14Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6.5 Electrical Characteristics

over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = 0.5 A, VI(/ENx) = 0 V (unless otherwise noted)
PARAMETER TEST CONDITIONS(1) MIN TYP MAX UNIT
POWER SWITCH
rDS(on) Static drain-source on-state resistance, 5-V operation and 3.3-V operation VI(IN) = 5 V or 3.3 V, IO = 0.5 A,
-40°C ≤ TJ ≤ 125°C		 D and DGN packages 70 135 mΩ
DBV package only 95 140
Static drain-source on-state resistance, 2.7-V operation VI(IN) = 2.7 V, IO = 0.5 A,
–40°C ≤ TJ ≤ 125°C		 D and DGN packages 75 150 mΩ
Static drain-source on-state resistance, 5-V operation VI(IN) = 5 V, IO = 1 A, OUT1 and OUT2
connected, 0°C ≤ TJ ≤ 70°C		 DGN package, TPS2042B/52B 49 mΩ
tr Rise time, output VI(IN) = 5.5 V CL = 1 μF,
RL = 10 Ω		 TJ = 25°C 0.6 1.5 ms
VI(IN) = 2.7 V 0.4 1
tf Fall time, output VI(IN) = 5.5 V 0.05 0.5
VI(IN) = 2.7 V 0.05 0.5
ENABLE INPUT EN AND ENx
VIH High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V
VIL Low-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 0.8
II Input current VI( ENx) = 0 V or 5.5 V –0.5 0.5 μA
ton Turnon time CL = 100 μF, RL = 10 Ω 3 ms
toff Turnoff time CL = 100 μF, RL = 10 Ω 10
CURRENT LIMIT
IOS Short-circuit output current VI(IN) = 5 V, OUT connected to GND,
device enabled into short-circuit		 TJ = 25°C 0.75 1 1.25 A
–40°C ≤ TJ ≤ 125°C 0.7 1 1.3
VI(IN) = 5 V, OUT1 and OUT2 connected to
GND, device enabled into short-circuit, measure at IN		 0°C ≤ TJ ≤ 70°C
TPS2042B/52B		 1.5
IOC(2) Overcurrent trip threshold VIN = 5 V, 100 A/s

TPS2042B

TPS2052B (DRB package only)		 IOS 1.55 2 A
SUPPLY CURRENT (TPS2041B, TPS2051B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 1 μA
-40°°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TJ = 25°C 75 95 μA
–40°C ≤ TJ ≤ 125°C 75 95
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0 μA
SUPPLY CURRENT (TPS2042B, TPS2052B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V TJ = 25°C 0.5 1 μA
–40°C ≤ TJ ≤ 125°C 0.5 5
Supply current, high-level output No load on OUT, VI( ENx) = 0 V

TPS20x2B

(DRB package only)		 TJ = 25°C 50 70 μA
–40°C ≤ TJ ≤ 125°C 50 90

TPS20x2B

(D and DGN packages)		 TJ = 25°C 95 120 uA
–40°C ≤ TJ ≤ 125°C 95 120
Leakage current OUT connected to ground, VI( ENx) = 5.5 V –40°C ≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, IN = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2043B, TPS2053B)
Supply current, low-level output No load on OUT, VI(ENx) = 0 V TJ = 25°C 0.5 2 μA
–40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI(ENx) = 5.5 V TJ = 25°C 65 90 μA
–40°C ≤ TJ ≤ 125°C 65 110
Leakage current OUT connected to ground, VI(ENx) = 0 V –40°C≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
SUPPLY CURRENT (TPS2044B, TPS2054B)
Supply current, low-level output No load on OUT, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 TJ = 25°C 0.5 2 μA
–40°C ≤ TJ ≤ 125°C 0.5 10
Supply current, high-level output No load on OUT, VI( ENx) = 0 V,
or VI(ENx) = 5.5 V		 TJ = 25°C 75 110 μA
–40°C ≤ TJ ≤ 125°C 75 140
Leakage current OUT connected to ground, VI( ENx) = 5.5 V,
or VI(ENx) = 0 V		 –40°C≤ TJ ≤ 125°C 1 μA
Reverse leakage current VI(OUTx) = 5.5 V, INx = ground TJ = 25°C 0.2 μA
UNDERVOLTAGE LOCKOUT (TPS20x3BD, TPS20x4BD, & TPS20x2BDRB)
Low-level input voltage, IN, INx 2 2.5 V
Hysteresis, IN, INx TJ = 25°C 75 mV
UNDERVOLTAGE LOCKOUT (TPS20x1B & TPS20x2B; D/DBV/DGN packages)
Low-level input voltage, IN, INx 2 2.6 V
Hysteresis, IN, INx TJ = 25°C 75 mV
OVERCURRENT OC and OCx
Output low voltage, VOL(/OCx) IO( OCx) = 5 mA 0.4 V
Off-state current VO( OCx) = 5 V or 3.3 V 1 μA
OC deglitch OCx assertion or deassertion 4 8 15 ms
THERMAL SHUTDOWN(3)
Thermal shutdown threshold 135 °C
Recovery from thermal shutdown 125 °C
Hysteresis 10 °C
(1) Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
(2) TPS20x1B and TPS20x2B devices in the D, DGN, and DBV packages do not have overcurrent trip thresholds. Current is limited to IOS under different test condition. Check Section 8.3.7 for more details.
(3) The thermal shutdown only reacts under overcurrent conditions.