SLVS798G January   2008  – June 2024 TPS2062A , TPS2066A

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Electrical Characteristics
    5. 5.5 Typical Characteristics
  7. Parameter Measurement Information
    1.     13
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Overcurrent
      1. 7.3.1 Overcurrent Conditions (TPS2062ADRB, TPS2066ADRB, and TPS2066AD)
      2. 7.3.2 Overcurrent Conditions (TPS2062AD)
    4. 7.4 OCx Response
    5. 7.5 Undervoltage Lockout (UVLO)
    6. 7.6 Enable ( ENx or ENx)
    7. 7.7 Thermal Sense
  9. Application Information
    1. 8.1 Power-Supply Considerations
    2. 8.2 Input and Output Capacitance
    3. 8.3 Power Dissipation and Junction Temperature
    4. 8.4 Universal Serial Bus (USB) Applications
    5. 8.5 Self-powered and Bus-Powered Hubs
    6. 8.6 Low-Power Bus-Powered And High-Power Bus-Powered Functions
    7. 8.7 USB Power-Distribution Requirements
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Overview

The devices are current-limited, power distribution switches using N-channel MOSFETs for applications where short-circuits or heavy capacitive loads are encountered. These devices have a minimum fixed current-limit threshold above 1.1A allowing for continuous operation up to 1A per channel. Overtemperature protection is an additional device shutdown feature. Each device incorporates an internal charge pump and gate drive circuitry necessary to drive the N-channel MOSFETs. The charge pump supplies power to the driver circuit and provides the necessary voltage to pull the gate of the MOSFET above the source. The charge pump operates from input voltages as low as 2.7V and requires little supply current. The driver controls the gate voltage of the power switch. The driver incorporates circuitry that controls the rise and fall times of the output voltage to provide "soft-start" and to limit large current and voltage surges.