SLVSBT4A May   2013  – August 2015 TPS22924D

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: VIN = 3.6 V
    7. 6.7 Switching Characteristics: VIN = 0.9 V
    8. 6.8 Dissipation Ratings
    9. 6.9 Typical Characteristics
  7. Parametric Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ON/OFF Control
      2. 8.3.2 Output Pulldown
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 VIN to VOUT Voltage Drop
      2. 9.1.2 Input Capacitor
      3. 9.1.3 Output Capacitor
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Managing Inrush Current
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Community Resources
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings (1)

MIN MAX UNIT
VIN Input voltage –0.3 4 V
VOUT Output voltage VIN + 0.3 V
VON ON pin voltage –0.3 4 V
IMAX Maximum continuous switch current, TA = -40°C to 85°C 2 A
IPLS Maximum pulsed switch current, 100-µs pulse, 2% duty cycle, TA = -40°C to 85°C 4 A
TA Operating free-air temperature –40 85 °C
Tstg Storage temperature –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±5000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN MAX UNIT
VIN Input voltage 0.75 3.6 V
VOUT Output voltage VIN V
VIH High-level input voltage, ON VIN = 2.5 V to 3.6 V 1.2 3.6 V
VIN = 0.75 V to 2.5 V 0.9 3.6
VIL Low-level input voltage, ON VIN = 2.5 V to 3.6 V 0.6 V
VIN = 0.75 V to 2.49 V 0.4
CIN Input capacitance 1 (1) μF
(1) See the Input Capacitor section in Application Information.

6.4 Thermal Information

THERMAL METRIC (1) TPS22924D UNIT
YZP (DSBGA)
6 PINS
RθJA Junction-to-ambient thermal resistance 123 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 17.6 °C/W
RθJB Junction-to-board thermal resistance 22.8 °C/W
ψJT Junction-to-top characterization parameter 5.7 °C/W
ψJB Junction-to-board characterization parameter 22.6 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

VIN = 0.75 V to 3.6 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP (1) MAX UNIT
IQ, VIN Quiescent current VOUT = open, VIN = VON VIN = 3.6 V Full 75 160 µA
VIN = 2.5 V 42 100
VIN = 1.8 V 50 350
VIN = 1.2 V 95 200
VIN = 1.0 V 65 120
VIN = 0.75 V 35 80
ISD, VIN Shutdown current VON = GND, VOUT = 0V Full 4.0 µA
RON ON-state resistance IOUT = -200 mA VIN = 3.6 V 25°C 18.3 22.8
Full 26.8
VIN = 2.5 V 25°C 18.5 23.0
Full 27.2
VIN = 1.8 V 25°C 19.6 24.1
Full 28.1
VIN = 1.2 V 25°C 19.4 23.9
Full 28.0
VIN = 1.0 V 25°C 20.3 24.8
Full 29.0
VIN = 0.75 V 25°C 22.7 27.2
Full 34.8
RPD Output pulldown resistance (2) VIN = 3.3 V, VON = 0, IOUT = 1 mA 25°C 450 1400 Ω
ION ON-pin input leakage current VON = 0.9 V to 3.6 V or GND Full 0.1 µA
(1) Typical values are at VIN = 3.3 V and TA = 25°C.

6.6 Switching Characteristics: VIN = 3.6 V

VIN = 3.6 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turn-ON time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 7400 μs
tOFF Turn-OFF time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 2.5 μs
tr VOUT rise time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 6200 μs
tf VOUT fall time RL = 10 Ω, CL = 0.1 μF, VIN = 3.6V 2 μs

6.7 Switching Characteristics: VIN = 0.9 V

VIN = 0.9 V, TA = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
tON Turn-ON time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 6300 μs
tOFF Turn-OFF time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 12 μs
tr VOUT rise time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 3200 μs
tf VOUT fall time RL = 10 Ω, CL = 0.1 μF, VIN = 0.9V 3 μs

6.8 Dissipation Ratings

BOARD DERATING FACTOR ABOVE
TA = 25°C
TA < 25°C TA = 70°C TA = 85°C
High-K (1) - 8.1063 mW/°C 810.63 mW 445.84 mW 324.25 mW
(1) The JEDEC high-K (2s2p) board used to derive this data was a 3- × 3-inch, multilayer board with 1-ounce internal power and ground planes and 2-ounce copper traces on top and bottom of the board.

6.9 Typical Characteristics

TPS22924D C001_lvsbt4.pngFigure 1. On-State Resistance vs Input Voltage
TPS22924D C003_lvsbt4.pngFigure 3. Quiescent Current vs Input Voltage
TPS22924D C009_lvsbt4.pngFigure 5. On Input Threshold
TPS22924D TC7_lvsbt4.pngFigure 7. Turnoff Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC9_lvsbt4.pngFigure 9. Fall Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC11_lvsbt4.pngFigure 11. Turnoff Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC13_lvsbt4.pngFigure 13. Fall Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D C010_lvsbt4.pngFigure 15. Turnon Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
TPS22924D C014_lvsbt4.pngFigure 17. Fall Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
TPS22924D sc2_lvsbt4.pngFigure 19. Turnoff Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
TPS22924D sc4_lvsbt4.pngFigure 21. Turnoff Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
TPS22924D sc6_lvsbt4.pngFigure 23. Turnoff Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
TPS22924D sc8_lvsbt4.pngFigure 25. Turnoff Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
TPS22924D C002_lvsbt4.pngFigure 2. On-State Resistance vs Temperature
TPS22924D TC4_lvsbt4.pngFigure 4. Shutdown Current vs Input Voltage
TPS22924D TC6_lvsbt4.pngFigure 6. Turnon Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC8_lvsbt4.pngFigure 8. Rise Time vs Temperature
(VIN = 3.6 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC10_lvsbt4.pngFigure 10. Turnon Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D TC12_lvsbt4.pngFigure 12. Rise Time vs Temperature
(VIN = 0.9 V, CL = 0.1 µF, RL = 10 Ω)
TPS22924D C013_lvsbt4.pngFigure 14. Rise Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
TPS22924D C011_lvsbt4.pngFigure 16. Turnoff Time vs Input Voltage
(CL = 0.1 µF, RL = 10 Ω, VON = 1.8 V)
TPS22924D sc1_lvsbt4.png
Figure 18. Turnon Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
TPS22924D sc3_lvsbt4.pngFigure 20. Turnon Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 0.9 V, TA = 25°C)
TPS22924D sc5_lvsbt4.pngFigure 22. Turnon Response
(CIN = 1 µF, CL = 0.1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)
TPS22924D sc7_lvsbt4.pngFigure 24. Turnon Response
(CIN = 10 µF, CL = 1 µF, RL = 10 Ω, VIN = 3.6 V, TA = 25°C)