TPS2295x 5.7 V, 5 A, 14 mΩ On-Resistance Load Switch
- SLVSCT5D March 2015 – September 2016 TPS22953 , TPS22954
  
  PRODUCTION DATA.

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DATA SHEET

TPS2295x 5.7 V, 5 A, 14 mΩ On-Resistance Load Switch

1 Features

Integrated Single Channel Load Switch
Input Voltage Range: 0.7 V to 5.7 V
R_ON Resistance
- R_ON = 14 mΩ at V_IN = 5 V (V_BIAS = 5 V)
5-A Maximum Continuous Switch Current
Adjustable Undervoltage Lockout Threshold (UVLO)
Adjustable Voltage Supervisor with
Power Good (PG) Indicator
Adjustable Output Slew Rate Control
Enhanced Quick Output Discharge Remains Active after Power is Removed (TPS22954 Only)
- 15 Ω (Typ) Discharges 100 µF Within 10 ms
Reverse Current Blocking when Disabled (TPS22953 Only)
Automatic Restart after Supervisor Fault Detection When Enabled
Thermal Shutdown
Low Quiescent Current ≤ 50 µA
SON 10-pin Package with Thermal Pad
ESD Performance Tested Per JESD 22
- 2-kV HBM and 750-V CDM

2 Applications

Solid State Drives
Embedded and Industrial PC
Ultrabook™ and Notebooks
Desktops
Servers
Telecom Systems

3 Description

The TPS22953/54 are small, single channel load switches with controlled turn on. The devices contain a N-channel MOSFET that can operate over an input voltage range of 0.7 V to 5.7 V and can support a maximum continuous current of 5 A.

The integrated adjustable undervoltage lockout (UVLO) and adjustable power good (PG) threshold provides voltage monitoring as well as robust power sequencing. The adjustable rise time control of the device greatly reduces inrush current for a wide variety of bulk load capacitances, thereby reducing or eliminating power supply droop. The switch is independently controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals. A 15-Ω on-chip load is integrated into the device for a quick discharge of the output when switch is disabled. The enhanced Quick Output Discharge (QOD) remains active for short time after power is removed from the device to finish discharging the output.

The TPS22953/54 are available in small, space-saving 10-SON packages with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of –40°C to +105°C.

Device Information⁽¹⁾

PART NUMBER	PACKAGE (PIN)	BODY SIZE (NOM)
TPS2295x	WSON (10)	2.00 mm x 2.00 mm
TPS2295x	WSON (10)	2.00 mm x 3.00 mm

For all available packages, see the orderable addendum at the end of the datasheet.

Simplified Schematic

TPS22954 TPS22953 Typical_Application.gif

4 Revision History

Changes from C Revision (July 2015) to D Revision

Added Power Sequencing section. Go

Changes from B Revision (May 2015) to C Revision

Changed inverter part number from SN74LVC1G07 to SN74LVC1G06 in the Break-Before-Make Power MUX Schematic.Go

Changes from A Revision (April 2015) to B Revision

Updated pin names and graphics throughout the document. Go

Changes from * Revision (March 2015) to A Revision

Initial release of full version. Go

5 Device Comparison Table

Device	Quick Output Discharge	Reverse Current Blocking	Package (Pin)	Body Size	Pin Pitch
TPS22954	Yes	No	DSQ (10)	2.00 mm x 2.00 mm	0.4 mm
TPS22954	Yes	No	DQC (10)	2.00 mm x 3.00 mm	0.5 mm
TPS22953	No	Yes	DSQ (10)	2.00 mm x 2.00 mm	0.4 mm
TPS22953	No	Yes	DQC (10)	2.00 mm x 3.00 mm	0.5 mm

6 Pin Configuration and Functions

DQC/DSQ Package

10 Pin WSON

Top View

DQC/DSQ Package

10 Pin WSON

Bottom View

Pin Functions

PIN⁽¹⁾		I/O	DESCRIPTION
NO.	NAME	I/O	DESCRIPTION
1	IN	I	Switch input. Bypass this input with a ceramic capacitor to GND
2	IN	I
3	BIAS	I	Bias pin and power supply to the device
4	EN	I	Active high switch enable/disable input. Also acts as the input UVLO pin. Use external resistor divider to adjust the UVLO level. Do not leave floating.
5	GND	—	Device ground
6	CT	O	V_OUT slew rate control. Place ceramic cap from CT to GND to change the V_OUT slew rate of the device and limit the inrush current. CT Capacitormust be rated to 25 V or higher
7	PG	O	Power good. This pin is open drain which will pull low when the voltage on EN and/or SNS is below their respective VIL level
8	SNS	I	Sense pin. Use external resistor divider to adjust the power good level. Do not leave floating
9	OUT	O	Switch output
10	OUT	O	Switch output
—	Thermal Pad	—	Exposed thermal pad. Tie to GND

(1) Pinout applies to all package versions.

7 Specifications

7.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
V_IN	Input voltage	–0.3	6	V
V_BIAS	Bias voltage	–0.3	6	V
V_OUT	Output voltage	–0.3	6	V
V_EN, V_SNS, V_PG	EN, SNS, and PG voltage	–0.3	6	V
I_MAX	Maximum continuous switch current, T_A = 70°C		5	A
I_PLS	Maximum pulsed switch current, pulse < 300 µs, 2% duty cycle		7	A
T_J,MAX	Maximum junction temperature	Internally limited ⁽²⁾
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) See TSD specification in the Electrical Characteristics section and Thermal Considerations section.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±750	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions.

7.3 Recommended Operating Conditions

Over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage	0.7	V_BIAS	V
V_BIAS	Bias voltage	2.5	5.7	V
V_OUT	Output voltage	0	5.7	V
V_EN, V_SNS, V_PG	EN, SNS, and PG voltage	0	5.7	V
T_A ⁽¹⁾	Operating free-air temperature	–40	105	°C
T_J	Operating junction temperature	–40	125	°C

(1) In applications where high power dissipation and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient temperature [T_A(max)] is dependent on the maximum operating junction temperature [T_J(max)], the maximum power dissipation of the device in the application [P_D(max)], and the junction-to-ambient thermal resistance of the part/package in the application (θ_JA), as given by the following equation: T_A(max) = T_J(max) – (θ_JA × P_D(max))

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPS22953/54		UNIT
		DQC (WSON)	DSQ (WSON)
		10 PINS	10 PINS
R_θJA	Junction-to-ambient thermal resistance	65.2	63.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	73.9	81.6	°C/W
R_θJB	Junction-to-board thermal resistance	25.5	34.1	°C/W
ψ_JT	Junction-to-top characterization parameter	2	1.9	°C/W
ψ_JB	Junction-to-board characterization parameter	25.4	34.5	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	8.5	7.9	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

7.5 Electrical Characteristics

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ T_A ≤ +105 °C and the recommended V_BIAS voltage range of 2.5 V to 5.7 V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS	T_A	MIN	TYP	MAX	UNIT
VOLTAGE THRESHOLDS
V_EN	V_IH, Rising threshold	V_IN = 0.7 V to V_BIAS	–40°C to +105°C	650	700	750	mV
V_EN	V_IL, Falling threshold	V_IN = 0.7 V to V_BIAS	–40°C to +105°C	560	600	640	mV
V_SNS	V_IH, Rising threshold	V_IN = 0.7 V to V_BIAS	–40°C to +105°C	465	515	565	mV
V_SNS	V_IL, Falling threshold	V_IN = 0.7 V to V_BIAS	–40°C to +105°C	410	455	500	mV
TIMINGS
t_BLANK	Blanking time for EN and SNS	EN or SNS rising	–40°C to +105°C		100		µs
t_DEGLITCH	Deglitch time for EN and SNS	EN or SNS falling	–40°C to +105°C		5		µs
t_DIS	Output discharge time (TPS22954 only)	C_L = 100 µF	–40°C to +105°C			10	ms
t_RESTART	Output restart time	SNS falling	–40°C to +105°C		2		ms
t_RCB	Response time for reverse current blocking (TPS22953 only)	V_OUT = V_BIAS EN falling	–40°C to +105°C		10		µs
THERMAL CHARACTERISTICS
T_SD	Thermal shutdown	Junction temperature rising	—	130	150	170	°C
TSD_HYS	Thermal shutdown hysteresis	Junction temperature falling	—		20		°C
REVERSE CURRENT BLOCKING
I_RCB,IN	Input reverse blocking current (TPS22953 only)	V_OUT = 5 V, V_IN = V_EN = 0 V, V_BIAS = 0 V to 5.7 V	25°C		0.01	2	µA
			–40°C to +85°C			5	µA
			–40°C to +105°C			11	µA

7.6 Electrical Characteristics—V_BIAS = 5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ T_A ≤ +105 °C and V_BIAS = 5 V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +85°C	34	45	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +105°C		50
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +85°C	5	7	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +105°C		8	µA
I_{SD, IN}	Input shutdown current	V_EN = 0 V to V_IL, V_OUT = 0 V	V_IN = 5 V	–40°C to +85°C	0.02	4	µA
			V_IN = 5 V	–40°C to +105°C		13
			V_IN = 3.3 V	–40°C to +85°C	0.01	3
			V_IN = 3.3 V	–40°C to +105°C		10
			V_IN = 1.8 V	–40°C to +85°C	0.01	3
			V_IN = 1.8 V	–40°C to +105°C		10
			V_IN = 1.2 V	–40°C to +85°C	0.01	2
			V_IN = 1.2 V	–40°C to +105°C		8
			V_IN = 0.7 V	–40°C to +85°C	0.01	2
			V_IN = 0.7 V	–40°C to +105°C		8
I_EN	EN pin input leakage current	V_EN = 0 V to 5.7 V		–40°C to +105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS≤ V_BIAS		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 5 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 3.3 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 1.8 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 1.5 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 1.2 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 0.7 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	15	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		–40°C to +105°C		30	Ω

7.7 Electrical Characteristics—V_BIAS = 3.3 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ T_A ≤ +105 °C and V_BIAS = 3.3 V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +85°C	19	35	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +105°C		37
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +85°C	4	6	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +105°C		7	µA
I_{SD, IN}	Input shutdown current	V_EN = 0 V to V_IL, V_OUT = 0 V	V_IN = 3.3 V	–40°C to +85°C	0.01	3	µA
			V_IN = 3.3 V	–40°C to +105°C		10
			V_IN = 1.8 V	–40°C to +85°C	0.01	3
			V_IN = 1.8 V	–40°C to +105°C		10
			V_IN = 1.2 V	–40°C to +85°C	0.01	2
			V_IN = 1.2 V	–40°C to +105°C		8
			V_IN = 0.7 V	–40°C to +85°C	0.01	2
			V_IN = 0.7 V	–40°C to +105°C		8
I_EN	EN pin input leakage current	V_EN = 0 V to 5.7 V		–40°C to +105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS≤ V_BIAS		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 3.3 V	25°C	15	21	mΩ
				–40°C to +85°C		24
				–40°C to +105°C		25
			V_IN = 1.8 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 1.5 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 1.2 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
			V_IN = 0.7 V	25°C	14	20	mΩ
				–40°C to +85°C		23
				–40°C to +105°C		24
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	13	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		–40°C to +105°C		30	Ω

7.8 Electrical Characteristics—V_BIAS = 2.5 V

Unless otherwise noted, the specification in the following table applies over the operating ambient temperature
–40 °C ≤ T_A ≤ +105 °C and V_BIAS = 2.5 V. Typical values are for T_A = 25°C.

PARAMETER		TEST CONDITIONS		T_A	TYP	MAX	UNIT
POWER SUPPLIES AND CURRENTS
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +85°C	16	25	µA
I_{Q, BIAS}	BIAS quiescent current	I_OUT = 0, V_IN = 0.7 V to V_BIAS, V_EN = 5 V		–40°C to +105°C		27
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +85°C	4	5	µA
I_{SD, BIAS}	BIAS shutdown current	V_OUT = 0 V, V_IN = 0.7 V to V_BIAS, V_EN = 0 V to V_IL		–40°C to +105°C		6	µA
I_{SD, IN}	Input shutdown current	V_EN = 0 V to V_IL, V_OUT = 0 V	V_IN = 2.5 V	–40°C to +85°C	0.01	3	µA
			V_IN = 2.5 V	–40°C to +105°C		10
			V_IN = 1.8 V	–40°C to +85°C	0.01	3
			V_IN = 1.8 V	–40°C to +105°C		10
			V_IN = 1.2 V	–40°C to +85°C	0.01	2
			V_IN = 1.2 V	–40°C to +105°C		8
			V_IN = 0.7 V	–40°C to +85°C	0.01	2
			V_IN = 0.7 V	–40°C to +105°C		8
I_EN	EN pin input leakage current	V_EN = 0 V to 5.7 V		–40°C to +105°C		0.1	µA
I_SNS	SNS pin input leakage current	V_SNS≤ V_BIAS		–40°C to +105°C		0.1	µA
RESISTANCE CHARACTERISTICS
R_ON	ON-state resistance	I_OUT = –200 mA	V_IN = 2.5 V	25°C	16	23	mΩ
				–40°C to +85°C		26
				–40°C to +105°C		27
			V_IN = 1.8 V	25°C	15	22	mΩ
				–40°C to +85°C		25
				–40°C to +105°C		26
			V_IN = 1.5 V	25°C	15	22	mΩ
				–40°C to +85°C		25
				–40°C to +105°C		26
			V_IN = 1.2 V	25°C	15	22	mΩ
				-40°C to 85°C		24
				–40°C to +105°C		25
			V_IN = 0.7 V	25°C	14	21	mΩ
				–40°C to +85°C		24
				–40°C to +105°C		25
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		25°C	12	28	Ω
R_PD	Output pulldown resistance (TPS22954 Only)	V_IN = V_OUT = V_BIAS, V_EN = 0 V		–40°C to +105°C		30	Ω

7.9 Switching Characteristics—CT = 1000 pF

Refer to the timing test circuit in Figure 51 (unless otherwise noted) for references to external components used for the test condition in the switching characteristics table. Switching characteristics shown below are only valid for the power-up sequence where V_IN and V_BIAS are already in steady state condition before the EN terminal is asserted high.

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = 5 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1265	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	1492
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2.2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	519
V_IN = 2.5 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	813	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	6.1
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	765
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2.2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	430
V_IN= 0.7 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	476	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	6.2
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	245
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2.1
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	353
V_IN = 2.5 V, V_EN = 5 V, V_BIAS= 2.5 V, T_A= 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	813	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	4.9
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	765
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2.2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	430
V_IN = 0.7 V, V_EN = 5 V, V_BIAS = 2.5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	476	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	6.1
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	245
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	2.1
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 1000 pF	353

7.10 Switching Characteristics—CT = 0 pF

PARAMETER		TEST CONDITION	TYP	UNIT
V_IN = 5 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	235	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	140
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	2.2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	165
V_IN = 2.5 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	200	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	79
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	2.1
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	160
V_IN= 0.7 V, V_EN = V_BIAS = 5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	170	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	32
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	154
V_IN = 2.5 V, V_EN = 5 V, V_BIAS= 2.5 V, T_A= 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	200	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	79
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	2.1
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	160
V_IN = 0.7 V, V_EN = 5 V, V_BIAS = 2.5 V, T_A = 25°C
t_ON	Turnon time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	170	µs
t_OFF	Turnoff time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	6
t_R	V_OUT rise time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	32
t_F	V_OUT fall time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	2
t_D	ON delay time	R_L = 10 Ω, C_L = 0.1 µF, CT = 0 pF	154

7.11 Typical DC Characteristics

V_IN = 1.8 V	V_EN = 5.7 V	V_OUT = 0 V

Figure 1. I_Q,BIAS vs V_BIAS

V_IN = 1.8 V	V_EN = 0 V	V_OUT = 0 V

Figure 3. I_SD,BIAS vs V_BIAS

V_BIAS = 0 V to 5.7 V

V_EN = 0 V

V_IN = 0 V

Figure 5. I_RCB,IN vs V_OUT

V_BIAS = 2.5 V	Iout = –200 mA	V_EN = 5 V

Figure 7. R_ON vs Temperature, V_BIAS = 2.5 V

V_BIAS = 2.5 V	Iout = –200 mA	V_EN = 5 V

Figure 9. R_ON vs V_IN, V_BIAS = 2.5 V

V_BIAS = 5 V	Iout = –200 mA	V_EN = 5 V

Figure 11. R_ON vs V_IN, V_BIAS = 5 V

V_BIAS = 2.5 V	V_EN = 5 V

Figure 13. R_ON vs I_OUT, V_BIAS = 2.5 V

V_BIAS = 5 V	V_EN = 5 V

Figure 15. R_ON vs I_OUT, V_BIAS = 5 V

V_BIAS = 3.3 V	V_IN = V_OUT	V_EN = 0 V

Figure 17. R_PD vs V_OUT, V_BIAS = 3.3 V

V_BIAS = 5 V	V_EN = 5.7 V	V_OUT = 0 V

Figure 2. I_Q,BIAS vs V_IN

V_BIAS = 5 V	V_EN = 0 V	V_OUT = 0 V

Figure 4. I_SD,IN vs V_IN

V_BIAS = 0 V to 5.7 V

V_EN = 0 V

V_IN = 0 V

Figure 6. I_RCB,IN vs V_OUT

V_BIAS = 3.3 V	Iout = –200 mA	V_EN = 5 V

Figure 8. R_ON vs Temperature, V_BIAS = 3.3 V

V_BIAS = 3.3 V	Iout = –200 mA	V_EN = 5 V

Figure 10. R_ON vs V_IN, V_BIAS = 3.3 V

T_A= 25°C	Iout = –200 mA	V_EN = 5 V

Figure 12. R_ON vs V_IN

V_BIAS = 3.3 V	V_EN = 5 V

Figure 14. R_ON vs I_OUT, V_BIAS = 3.3 V

V_BIAS = 2.5 V	V_IN = V_OUT	V_EN = 0 V

Figure 16. R_PD vs V_OUT, V_BIAS = 2.5 V

V_BIAS = 5 V	V_IN = V_OUT	V_EN = 0 V

Figure 18. R_PD vs V_OUT, V_BIAS = 5 V

7.12 Typical Switching Characteristics

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = Low to High

Figure 19. t_R vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = High to Low

Figure 21. t_F vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = Low to High

Figure 23. t_ON vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = High to Low

Figure 25. t_OFF vs V_IN , V_BIAS = 2.5 V

V_BIAS = 2.5 V	CT = 1000 pF	V_EN = Low to High

Figure 27. t_D vs V_IN , V_BIAS = 2.5 V

	V_IN = 2.5 V	CT = 1000 pF	V_EN = Low to High

Figure 29. t_R vs V_BIAS

V_BIAS = 5 V	CT = 1000 pF	V_EN = Low to High

Figure 20. t_Rvs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = High to Low

Figure 22. t_F vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = Low to High

Figure 24. t_ON vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN = High to Low

Figure 26. t_OFF vs V_IN , V_BIAS = 5 V

V_BIAS = 5 V	CT = 1000 pF	V_EN =Low to High

Figure 28. t_Dvs V_IN , V_BIAS= 5 V

V_IN = 0.7 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 30. Turnon Waveform, V_BIAS = 2.5 V

V_IN = 0.7 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 32. Turnon Waveform, V_BIAS = 5 V

V_IN = 2.5 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 34. Turnon Waveform, V_BIAS = 2.5 V

V_IN = 2.5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 36. Turnon Waveform, V_BIAS = 5 V

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 38. Turnon Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 40. Turnon Waveform, V_BIAS = 5 V

TPS22954 TPS22953 On_3p3V_5V_No_Load.png

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = Open

Figure 42. Turnon Waveform, No Load

TPS22954 TPS22953 On_3.3V_5V_Heavy_Load.png

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 1 Ω

Figure 44. Turnon Waveform, Heavy Load

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 46. PG Response to EN Falling (t_DEGLITCH)

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 48. PG Response to SNS Rising (t_BLANK)

	V_IN = 10 Ω to GND	V_BIAS = 5 V
	C_IN = 0.2 µF	V_OUT = 5 V

Figure 50. Reverse Current Blocking Response Time (t_RCB)

V_IN = 0.7 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 31. Turnoff Waveform, V_BIAS = 2.5 V

V_IN = 0.7 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 33. Turnoff Waveform, V_BIAS = 5 V

V_IN = 2.5 V	V_BIAS = 2.5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 35. Turnoff Waveform, V_BIAS = 2.5 V

V_IN = 2.5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 37. Turnoff Waveform, V_BIAS = 5 V

V_IN = 3.3 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 39. Turnoff Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 10 Ω

Figure 41. Turnoff Waveform, V_BIAS = 5 V

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = Open

Figure 43. Turnon Waveform, No Load

TPS22954 TPS22953 On_5V_5V_Heavy_Load.png

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 0.1 µF	R_L = 1 Ω

Figure 45. Turnon Waveform, Heavy Load

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = 10 Ω

Figure 47. PG Response to SNS Falling with Auto-Restart (t_DEGLITCH and t_RESTART)

V_IN = 5 V	V_BIAS = 5 V	CT = 1000 pF
C_IN = 1 µF	C_L = 100 µF	R_L = None

Figure 49. Quick Output Discharge of 100-µF Load (t_DIS)