SLVS728D January 2007 – October 2019 TPS2412 , TPS2413
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
VDD | 1 | PWR | Input power for the gate drive charge pump and internal controls. VDD must be connected to a supply voltage ≥ 3 V. |
RSET | 2 | I | Connect a resistor to ground to program the turnoff threshold. Leaving RSET open results in a slightly positive V(A-C) turnoff threshold. |
RSVD | 3 | PWR | This pin must be connected to GND. |
GND | 4 | PWR | Device ground. |
GATE | 5 | O | Connect to the gate of the external MOSFET. Controls the MOSFET to emulate a low forward-voltage diode. |
C | 6 | I | Voltage sense input that connects to the simulated diode cathode. Connect to the MOSFET drain in the typical configuration. |
A | 7 | I | Voltage sense input that connects to the simulated diode anode. A also serves as the reference for the charge-pump bias supply on BYP. Connect to the MOSFET source in the typical configuration. |
BYP | 8 | I/O | Connect a storage capacitor from BYP to A to filter the gate drive supply voltage. |