4 Revision History
Changes from E Revision (February 2017) to F Revision
Changes from D Revision (July 2012) to E Revision
- Added ESD Ratings table, Thermal Information table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
Changes from C Revision (September 2011) to D Revision
- Added Operating voltage range to the RECOMMENDED OPERATING CONDITIONS tableGo
- Changed Supply Current Disabled Test Conditions From: VEN = Lo, VSENSE = VVCC = VOUT = 0 To: VEN = Lo, VSENSE = VVCC = VOUT Go
Changes from B Revision (March 2010) to C Revision
- Changed Figure 15, From: IIN = 5 A/div To: IIN = 0.5 A/divGo
Changes from A Revision (March 2010) to B Revision
- Added Feature: Calculator Tool Available (SLVC033)Go
- Added the Gate Capacitor (dV/dt) Control section: Revised text and Equation 5Go
Changes from * Revision (November 2003) to A Revision
- Deleted Lead temperature spec. from Abs Max Ratings tableGo
- Changed VPROG MIN voltage spec. from: 0 to: 0.4; added footnote (1) to the RECOMMENDED OPERATING CONDITIONS table Go
- Deleted footnote - Not tested in production from tF_TRIPGo
- Added clarification sentence to the GATE pin description, regarding adding capacitance. Go
- Changed V(VCC-OUT). to V(SENSE-OUT) in the OUT pin description. Go
- Changed from: (0–4 V) to: (0.4 – 4 V) in the PROG pin description Go
- Changed from: 2.5 V to: 2.7 V in the PG pin description.Go
- Added text to the PG pin description.Go
- Changed from: V(VCC–OUT) to: V(SENSE–OUT)Go
- Added text to the Gate Capacitor (dV/dt) Control section descriptionGo
- Added text to the High Gate Capacitance Applications section descriptionGo
- Added The Input Bypass section description.Go