SLVSHR9 December   2024 TPS25984B

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Logic Interface
    7. 6.7 Timing Requirements
    8. 6.8 Switching Characteristics
    9. 6.9 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Undervoltage Protection
      2. 7.3.2  Insertion Delay
      3. 7.3.3  Overvoltage Protection
      4. 7.3.4  Inrush Current, Overcurrent, and Short-Circuit Protection
        1. 7.3.4.1 Slew Rate (dVdt) and Inrush Current Control
          1. 7.3.4.1.1 Start-Up Time Out
        2. 7.3.4.2 Steady-State Overcurrent Protection (Circuit-Breaker)
        3. 7.3.4.3 Active Current Limiting During Start-Up
        4. 7.3.4.4 Short-Circuit Protection
      5. 7.3.5  Analog Load Current Monitor (IMON)
      6. 7.3.6  Mode Selection (MODE)
      7. 7.3.7  Digital Overcurrent Indication (D_OC)
      8. 7.3.8  Stacking Multiple eFuses for Scalability
        1. 7.3.8.1 Current Balancing During Start-Up
      9. 7.3.9  Analog Junction Temperature Monitor (TEMP)
      10. 7.3.10 Overtemperature Protection
      11. 7.3.11 Fault Response and Indication (GOK/FLT)
      12. 7.3.12 Power-Good Indication (PG)
      13. 7.3.13 Output Discharge
      14. 7.3.14 FET Health Monitoring
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Single Device, Standalone Operation
      2. 8.1.2 Multiple Devices, Parallel Connection
      3. 8.1.3 Digital Telemetry Using External Microcontroller
    2. 8.2 Typical Application: 12V, 3.3kW Power Path Protection in Data Center Servers
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Transient Protection
      2. 8.3.2 Output Short-Circuit Measurements
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Layout Guidelines

  • For all applications, TI recommends a ceramic decoupling capacitor of 0.1 μF or greater between the IN terminal and GND terminal.

  • For all applications, TI recommends a ceramic decoupling capacitor of 2.2 μF or greater between the OUT terminal and GND terminal.

  • The optimal placement of the decoupling capacitor is closest to the IN and GND terminals of the device. Care must be taken to minimize the loop area formed by the bypass-capacitor connection, the IN terminal, and the GND terminal of the IC. See Figure below for a PCB layout example.

  • High current-carrying power-path connections must be as short as possible and must be sized to carry at least twice the full-load current.

  • The GND terminal must be tied to the PCB ground plane at the terminal of the IC. The PCB ground must be a copper plane or island on the board.

  • The IN and OUT pins are used for Heat Dissipation. Connect to as much copper area as possible with thermal vias.

  • Locate the following support components close to their connection pins:
    • RILIM

    • RIMON

    • RIREF

    • CdVdT

    • CVREG

    • CIN

    • COUT

    • Resistors for the EN/UVLO pin

  • Connect the other end of the component to the GND pin of the device with shortest trace length. The trace routing for the CIN, COUT, RIREF, RILIM, RIMON, CVREG and CdVdt components to the device must be as short as possible to reduce parasitic effects on the current limit and soft-start timing. These traces must not have any coupling to switching signals on the board.

  • Because the ILIM and IREF pins directly control the overcurrent protection behavior of the device, the PCB routing of these nodes must be kept away from any noisy (switching) signals.

  • Protection devices such as TVS, snubbers, capacitors, or diodes must be placed physically close to the device they are intended to protect. These protection devices must be routed with short traces to reduce inductance. For example, TI recommends a protection Schottky diode to address negative transients due to switching of inductive loads, and it must be physically close to the OUT pins.