SLVSDG2G July 2016 – December 2019 TPS2660
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
IN AND UVLO INPUT | ||||||
UVLO_tON(dly) | UVLO turnon delay | UVLO↑ (100 mV above V(UVLOR)) to V(OUT) = 100 mV, C(dvdt) = open | 250 | µs | ||
UVLO↑ (100 mV above V(UVLOR)) to V(OUT) = 100 mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] | 250 + 14.5 × C(dvdt) | µs | ||||
UVLO_toff(dly) | UVLO turnoff delay | UVLO↓ (100 mV below V(UVLOF)) to FLT↓ | 10 | µs | ||
SHUTDOWN CONTROL INPUT (SHDN) | ||||||
tSD(dly) | SHUTDOWN exit delay | SHDN↑ to V(OUT) = 100 mV, C(dvdt) ≥ 10 nF, [C(dvdt) in nF] | 250 + 14.5 × C(dvdt) | µs | ||
SHDN↑ to V(OUT) = 100 mV, C(dvdt) = open | 250 | µs | ||||
SHUTDOWN entry delay | SHDN↓ (below V(SHUTF)) to FLT↓ | 10 | µs | |||
OVER VOLTAGE PROTECTION INPUT (OVP) | ||||||
tOVP(dly) | OVP exit delay | OVP↓ (20 mV below V(OVPF)) to V(OUT) = 100 mV, TPS26600 & TPS26601 only | 200 | µs | ||
OVP disable delay | OVP↑ (20 mV above V(OVPR)) to FLT↓, TPS26600 and TPS26601 only | 6 | µs | |||
CURRENT LIMIT | ||||||
tFASTTRIP(dly) | Fast-trip comparator delay | I(OUT) > I(FASTRIP) | 250 | ns | ||
REVERSE PROTECTION COMPARATOR | ||||||
tREV(dly) | Reverse protection comparator delay | (V(IN) – V(OUT))↓ (100 mV overdrive below V(REVTH)) to internal FET turn OFF | 1.5 | µs | ||
(V(IN) – V(OUT))↓ (10 mV overdrive below V(REVTH)) to FLT↓ | 45 | |||||
tFWD(dly) | (V(IN) – V(OUT))↑ (10 mV overdrive above V(FWDTH)) to FLT↑ | 70 | ||||
THERMAL SHUTDOWN | ||||||
tretry | Retry delay in TSD | 512 | ms | |||
OUTPUT RAMP CONTROL (dVdT) | ||||||
tdVdT | Output ramp time | SHDN↑ to V(OUT) = 23.9 V, with C(dVdT) = 47 nF | 10 | ms | ||
SHDN↑ to V(OUT) = 23.9 V, with C(dVdT) = open | 1.6 | |||||
FAULT FLAG (FLT) | ||||||
tCB(dly) | FLT assertion delay in circuit breaker mode | MODE = OPEN, delay from I(OUT) > I(OL) to FLT↓ | 4 | ms | ||
tCBretry(dly) | Retry delay in circuit breaker mode | MODE = OPEN | 540 | ms | ||
tPGOODF | PGOOD delay (de-glitch) time | Falling edge | 875 | µs | ||
tPGOODR | Rising edge, C(dVdT) = open | 1400 | ||||
Rising egde, C(dVdT) ≥ 10 nF, [C(dvdt) in nF] | 875 + 20 × C(dVdT) |