SLVSE94G September   2018  – June 2024 TPS2663

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Hot Plug-In and Inrush Current Control
        1. 8.3.1.1 Thermal Regulation Loop
      2. 8.3.2  PGOOD and PGTH
        1. 8.3.2.1 PGTH as VOUT Sensing Input
      3. 8.3.3  Undervoltage Lockout (UVLO)
      4. 8.3.4  Overvoltage Protection (OVP)
      5. 8.3.5  Input Reverse Polarity Protection (B_GATE, DRV)
      6. 8.3.6  Reverse Current Protection
      7. 8.3.7  Overload and Short-Circuit Protection
        1. 8.3.7.1 Overload Protection
          1. 8.3.7.1.1 Active Current Limiting at 1 × IOL (TPS26630 and TPS26632 Only)
          2. 8.3.7.1.2 Active Current Limiting With 2 × IOL Pulse Current Support (TPS26631, TPS26633, TPS26635, TPS26636, and TPS26637 Only)
        2. 8.3.7.2 Short-Circuit Protection
          1. 8.3.7.2.1 Start-Up With Short Circuit on Output
      8. 8.3.8  Output Power Limiting, PLIM (TPS26632, TPS26633, TPS26635, TPS26636, and TPS26637 Only)
      9. 8.3.9  Current Monitoring Output (IMON)
      10. 8.3.10 FAULT Response (FLT)
      11. 8.3.11 IN_SYS, IN, OUT, and GND Pins
      12. 8.3.12 Thermal Shutdown
      13. 8.3.13 Low Current Shutdown Control (SHDN)
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Power Path Protection in a PLC System
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Programming the Current-Limit Threshold—R(ILIM) Selection
        2. 9.2.2.2 Undervoltage Lockout and Overvoltage Set Point
        3. 9.2.2.3 Output Buffer Capacitor – COUT
        4. 9.2.2.4 PGTH Set Point
        5. 9.2.2.5 Setting Output Voltage Ramp Time—(tdVdT)
          1. 9.2.2.5.1 Support Component Selections— RPGOOD and C(IN)
        6. 9.2.2.6 Selecting Q1, Q2 and TVS Clamp for Surge Protection
      3. 9.2.3 Application Curves
    3. 9.3 System Examples
      1. 9.3.1 Simple 24-V Power Supply Path Protection
      2. 9.3.2 Priority Power MUX Operation
      3. 9.3.3 Input Protection for a Compact 24-V Auxiliary Power Supply for Servo Drives
    4. 9.4 Dos and Do Nots
    5. 9.5 Power Supply Recommendations
      1. 9.5.1 Transient Protection
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
  • PWP|20
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.2.2.6 Selecting Q1, Q2 and TVS Clamp for Surge Protection

For ±500-V, 2-Ω surge, typically a SMC sized TVS like SMCJ36CA clamps the voltage around ±55 V. During the negative surge strike, the input voltage VIN_SYS spikes to –55 V. This spike results in a voltage stress of –(55 V + 24 V) = –79 V across the external blocking FET Q1. Choose at least a 80-V rated N-channel FET. B_GATE drive is in the range of 10 V to 14 V. Select a suitable FET with the target RDSON specified at this gate drive voltage. The fast pulldown gate switch Q2 pulls down the GATE of the Q1 during the reverse current event appearing during the surge test. Q2 must be at least 15-V VDS rated FET with a maximum VGS rating of 20-V , Ciss <= 50 pF and VGTH(min) ≤ 3 V. CSD19537Q3 and BSS138 are selected for Q1 and Q2 respectively. Figure 9-9 and Figure 9-10 illustrate the performance of the system during the surge testing.