SLVSGD3B December   2022  – August 2024 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 Working Mode
    4. 8.4 Feature Description
      1. 8.4.1 Accurate Current Sense
        1. 8.4.1.1 High Accuracy Sense Mode
      2. 8.4.2 Programmable Current Limit
        1. 8.4.2.1 Short-Circuit and Overload Protection
        2. 8.4.2.2 Capacitive Charging
      3. 8.4.3 Inductive-Load Switching-Off Clamp
      4. 8.4.4 Inductive Load Demagnetization
      5. 8.4.5 Full Protections and Diagnostics
        1. 8.4.5.1 Open-Load Detection
        2. 8.4.5.2 Thermal Protection Behavior
        3. 8.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.4.5.4 Overvoltage (OVP) Protection
        5. 8.4.5.5 Reverse Polarity Protection
        6. 8.4.5.6 Protection for MCU I/Os
        7. 8.4.5.7 Diagnostic Enable Function
        8. 8.4.5.8 Loss of Ground
        9. 8.4.5.9 Enhanced EFT Immunity
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 PWP Layout without a GND Network
        2. 9.4.2.2 PWP Layout with a GND Network
        3. 9.4.2.3 RGW Layout with a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

9.4.3 Thermal Considerations

This device possesses thermal shutdown (TABS) circuitry as a protection from overheating. For continuous normal operation, the junction temperature should not exceed the thermal-shutdown trip point. If the junction temperature exceeds the thermal-shutdown trip point, the output turns off. When the junction temperature falls below the thermal-shutdown trip point, the output turns on again.

Calculate the power dissipated by the device according to Equation 13.

Equation 12. PT = IOUT2 x RDSON + VS x INOM

where

  • PT = Total power dissipation of the device

After determining the power dissipated by the device, calculate the junction temperature from the ambient temperature and the device thermal impedance.

Equation 13. TJ = TA + RθJA x PT

For more information please see How to Drive Resistive, Inductive, Capacitive, and Lighting Loads.