SLVSGD3B December   2022  – August 2024 TPS281C30

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Device Functional Modes
      1. 8.3.1 Working Mode
    4. 8.4 Feature Description
      1. 8.4.1 Accurate Current Sense
        1. 8.4.1.1 High Accuracy Sense Mode
      2. 8.4.2 Programmable Current Limit
        1. 8.4.2.1 Short-Circuit and Overload Protection
        2. 8.4.2.2 Capacitive Charging
      3. 8.4.3 Inductive-Load Switching-Off Clamp
      4. 8.4.4 Inductive Load Demagnetization
      5. 8.4.5 Full Protections and Diagnostics
        1. 8.4.5.1 Open-Load Detection
        2. 8.4.5.2 Thermal Protection Behavior
        3. 8.4.5.3 Undervoltage Lockout (UVLO) Protection
        4. 8.4.5.4 Overvoltage (OVP) Protection
        5. 8.4.5.5 Reverse Polarity Protection
        6. 8.4.5.6 Protection for MCU I/Os
        7. 8.4.5.7 Diagnostic Enable Function
        8. 8.4.5.8 Loss of Ground
        9. 8.4.5.9 Enhanced EFT Immunity
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 IEC 61000-4-5 Surge
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Selecting RILIM
        2. 9.2.2.2 Selecting RSNS
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 EMC Considerations
      2. 9.4.2 Layout Example
        1. 9.4.2.1 PWP Layout without a GND Network
        2. 9.4.2.2 PWP Layout with a GND Network
        3. 9.4.2.3 RGW Layout with a GND Network
      3. 9.4.3 Thermal Considerations
  11. 10Device and Documentation Support
    1. 10.1 Receiving Notification of Documentation Updates
    2. 10.2 Support Resources
    3. 10.3 Trademarks
    4. 10.4 Electrostatic Discharge Caution
    5. 10.5 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

8.4.5.6 Protection for MCU I/Os

In many conditions, such as the negative surge pulse, or the loss of battery with an inductive load, a negative potential on the device GND pin may damage the MCU I/O pins [more likely, the internal circuitry connected to the pins]. Therefore, the serial resistors between MCU and HSS are required.

Also, for proper protection against loss of GND, TI recommends 10 kΩ resistance for the RPROT resistors.

TPS281C30 MCU IO ProtectionsFigure 8-19 MCU IO Protections