SLUS593J December 2003 – June 2022 TPS40054 , TPS40055 , TPS40057
PRODUCTION DATA
Refer to the PDF data sheet for device specific package drawings
The power dissipation in the TPS4005x is largely dependent on the MOSFET driver currents and the input voltage. The driver current is proportional to the total gate charge, Qg, of the external MOSFETs. Driver power (neglecting external gate resistance (refer to the PowerPAD Thermally Enhanced Package application note) can be calculated from Equation 41.
And the total power dissipation in the TPS4005x, assuming the same MOSFET is selected for both the high-side and synchronous rectifier, is described in Equation 42.
or
where
The maximum power capability of the PowerPAD package is dependent on the layout as well as air flow. The thermal impedance from junction to air, assuming 2-oz. copper trace and thermal pad with solder and no air flow:
The maximum allowable package power dissipation is related to ambient temperature by Equation 45.
Substituting Equation 38 into Equation 43 and solving for fSW yields the maximum operating frequency for the TPS4005x. The result is described in Equation 46.