SLUSBN5B August   2013  – July 2015 TPS53515

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  5-V LDO and VREG Start-Up
      2. 7.3.2  Enable, Soft Start, and Mode Selection
      3. 7.3.3  Frequency Selection
      4. 7.3.4  D-CAP3 Control and Mode Selection
        1. 7.3.4.1 D-CAP3 Mode
        2. 7.3.4.2 Sample and Hold Circuitry
        3. 7.3.4.3 Adaptive Zero-Crossing
      5. 7.3.5  Power-Good
      6. 7.3.6  Current Sense and Overcurrent Protection
      7. 7.3.7  Overvoltage and Undervoltage Protection
      8. 7.3.8  Out-of-Bounds Operation
      9. 7.3.9  UVLO Protection
      10. 7.3.10 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Auto-Skip Eco-mode Light Load Operation
      2. 7.4.2 Forced Continuous-Conduction Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Choose the Switching Frequency
        2. 8.2.2.2 Choose the Operation Mode
        3. 8.2.2.3 Choose the Inductor
        4. 8.2.2.4 Choose the Output Capacitor
        5. 8.2.2.5 Determine the Value of R1 and R2
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Performance
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input voltage range(2) EN –0.3 7.7 V
SW DC –3 30
Transient < 10 ns –5 32
VBST –0.3 36
VBST(3) –0.3 6
VBST when transient < 10 ns 38
VDD –0.3 28
VIN –0.3 30
VO, FB, MODE, RF –0.3 6
Output voltage range PGOOD –0.3 7.7 V
VREG, TRIP –0.3 6
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to network ground terminal.
(3) Voltage values are with respect to the SW terminal.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2500 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Input voltage EN –0.1 7 V
SW –3 27
VBST –0.1 28
VBST(1) –0.1 5.5
VDD 4.5 25
VIN 1.5 18
VO, FB, MODE, RF –0.1 5.5
Output voltage PGOOD –0.1 7 V
VREG, TRIP –0.1 5.5
Operating free-air temperature, TA –40 85 °C
(1) Voltage values are with respect to the SW pin.

6.4 Thermal Information

THERMAL METRIC(1) TPS53515 UNIT
RVE
(VQFN-CLIP)
28 PINS
RθJA Junction-to-ambient thermal resistance 37.5 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 34.1 °C/W
RθJB Junction-to-board thermal resistance 18.1 °C/W
ψJT Junction-to-top characterization parameter 1.8 °C/W
ψJB Junction-to-board characterization parameter 18.1 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 2.2 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range, VREG = 5 V, EN = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY CURRENT
IVDD VDD bias current TA = 25°C, No load
Power conversion enabled (no switching)		 1350 1850 µA
IVDDSTBY VDD standby current TA = 25°C, No load
Power conversion disabled		 850 1150 µA
IVIN(leak) VIN leakage current VEN = 0 V 0.5 µA
VREF OUTPUT
VVREF Reference voltage FB w/r/t GND, TA = 25°C 597 600 603 mV
VVREFTOL Reference voltage tolerance FB w/r/t GND, 0°C ≤ TJ ≤ 85°C –0.6% 0.5%
FB w/r/t GND, =–40°C ≤ TJ ≤ 85°C –0.7% 0.5%
OUTPUT VOLTAGE
IFB FB input current VFB = 600 mV 50 100 nA
IVODIS VO discharge current VVO = 0.5 V, Power Conversion Disabled 10 12 15 mA
SMPS FREQUENCY
fSW VO switching frequency(2) VIN = 12 V, VVO = 3.3 V, RDR < 0.041 250 kHz
VIN = 12 V, VVO = 3.3 V, RDR = 0.096 300
VIN = 12 V, VVO = 3.3 V, RDR = 0.16 400
VIN = 12 V, VVO = 3.3 V, RDR = 0.229 500
VIN = 12 V, VVO = 3.3 V, RDR = 0.297 600
VIN = 12 V, VVO = 3.3 V, RDR = 0.375 750
VIN = 12 V, VVO = 3.3 V, RDR = 0.461 850
VIN = 12 V, VVO = 3.3 V, RDR > 0.557 1000
tON(min) Minimum on-time TA = 25°C(1) 60 ns
tOFF(min) Minimum off-time TA = 25°C 175 240 310 ns
INTERNAL BOOTSTRAP SW
VF Forward Voltage VVREG–VBST, TA = 25°C, IF = 10 mA 0.15 0.25 V
IVBST VBST leakage current TA = 25°C, VVBST = 33 V, VSW = 28 V 0.01 1.5 µA
LOGIC THRESHOLD
VENH EN enable threshold voltage 1.3 1.4 1.5 V
VENL EN disable threshold voltage 1.1 1.2 1.3 V
VENHYST EN hysteresis voltage 0.22 V
VENLEAK EN input leakage current –1 0 1 µA
SOFT START
tSS Soft-start time 1 ms
PGOOD COMPARATOR
VPGTH VDDQ PGOOD threshold PGOOD in from higher 104% 108% 111%
PGOOD in from lower 89% 92% 96%
PGOOD out to higher 113% 116% 120%
PGOOD out to lower 80% 84% 87%
IPG PGOOD sink current VPGOOD = 0.5 V 4 6 mA
tPGDLY PGOOD delay time Delay for PGOOD going in 0.8 1.0 1.2 ms
Delay for PGOOD coming out 2 µs
IPGLK PGOOD leakage current VPGOOD = 5 V –1 0 1 µA
CURRENT DETECTION
RTRIP TRIP pin resistance range 20 70 kΩ
IOCL Current limit threshold, valley RTRIP = 52.3 kΩ 10.1 12 13.9 A
RTRIP = 38 kΩ 7.2 9.1 11.0
IOCLN Negative current limit threshold, valley RTRIP = 52.3 kΩ –15.3 –11.9 –8.5 A
RTRIP = 38 kΩ –12 –9 –6
VZC Zero cross detection offset 0 mV
PROTECTIONS
VVREGUVLO VREG undervoltage-lockout (UVLO) threshold voltage Wake-up 3.25 3.34 3.41 V
Shutdown 3.00 3.12 3.19
VVDDUVLO VDD UVLO threshold voltage Wake-up (default) 4.15 4.25 4.35 V
Shutdown 3.95 4.05 4.15
VOVP Overvoltage-protection (OVP) threshold voltage OVP detect voltage 116% 120% 124%
tOVPDLY OVP propagation delay With 100-mV overdrive 300 ns
VUVP Undervoltage-protection (UVP) threshold voltage UVP detect voltage 64% 68% 71%
tUVPDLY UVP delay UVP filter delay 1 ms
THERMAL SHUTDOWN
TSDN Thermal shutdown threshold(1) Shutdown temperature 140 °C
Hysteresis 40
LDO VOLTAGE
VREG LDO output voltage VIN = 12 V, ILOAD = 10 mA 4.65 5 5.45 V
VDOVREG LDO low droop drop-out voltage VIN = 4.5 V, ILOAD = 30 mA, TA = 25°C 365 mV
ILDOMAX LDO overcurrent limit VIN = 12 V, TA = 25°C 170 200 mA
INTERNAL MOSFETS
RDS(on)H High-side MOSFET on-resistance TA = 25°C 13.8 15.5 mΩ
RDS(on)L Low-side MOSFET on-resistance TA = 25°C 5.9 7.0 mΩ
(1) Specified by design. Not production tested.
(2) Resistor divider ratio (RDR) is described in Equation 1.

6.6 Typical Characteristics

TPS53515 C003_SLUSBN5.png
Figure 1. Efficiency vs. Output Current
TPS53515 C005_SLUSBN5.png
Figure 3. Efficiency vs. Output Current
TPS53515 C007_SLUSBN5.png
Figure 5. Output Voltage vs. Output Current
TPS53515 C009_SLUSBN5.png
Figure 7. Output Voltage vs. Output Current
TPS53515 C011_SLUSBN5.png
Figure 9. Switching Frequency vs. Output Current
TPS53515 soagraph1.gif
VIN = 12 V Switching frequency = 600kHz
Figure 11. Safe Operating Area, VO = 1.2 V
TPS53515 wf1_auto_skip_slusbn5.gif
Figure 13. Auto-Skip Mode Steady-State Operation
TPS53515 wf3_auto_skip_slusbn5.gif
Figure 15. Auto-Skip Mode Steady-State Operation
TPS53515 wf5_auto_skip_slusbn5.gif
Figure 17. Auto-Skip Mode Steady-State Operation
TPS53515 wf7_auto_skip_load_slusbn5.gif
Figure 19. Auto-Skip Mode Load Transient
TPS53515 wf9_start_up_slusbn5.gif
Figure 21. Auto‐Skip Mode Start-Up
TPS53515 wf11_start_up_slusbn5.gif
Figure 23. Auto‐Skip Mode Start-Up
TPS53515 wf13_shutdown_slusbn5.gif
Figure 25. Auto‐Skip Mode Shutdown Operation
TPS53515 wf15_shutdown_slusbn5.gif
Figure 27. Auto‐Skip Mode Shutdown Operation
TPS53515 wf17_shutdown_slusbn5.gif
Figure 29. Prebias Operation
TPS53515 wf19_OCP_slusbn5.gif
Figure 31. Overcurrent Protection
TPS53515 C004_SLUSBN5.png
Figure 2. Efficiency vs. Output Current
TPS53515 C006_SLUSBN5.png
Figure 4. Efficiency vs. Output Current
TPS53515 C008_SLUSBN5.png
Figure 6. Output Voltage vs. Output Current
TPS53515 C010_SLUSBN5.png
Figure 8. Output Voltage vs. Output Current
TPS53515 C012_SLUSBN5.png
Figure 10. Switching Frequency vs. Output Current
TPS53515 soagraph2.gif
VIN = 12 V Switching frequency = 600kHz
Figure 12. Safe Operating Area, VO = 5 V
TPS53515 wf2_FCCM_slusbn5.gif
Figure 14. FCCM Steady-State Operation
TPS53515 wf4_FCCM_slusbn5.gif
Figure 16. FCCM Steady-State Operation
TPS53515 wf6_FCCM_slusbn5.gif
Figure 18. FCCM Steady-State Operation
TPS53515 wf8_fccm_load_slusbn5.gif
Figure 20. FCCM Load Transient
TPS53515 wf10_fccm_load_slusbn5.gif
Figure 22. FCCM Start-Up
TPS53515 wf12_fccm_load_slusbn5.gif
Figure 24. FCCM Start-Up
TPS53515 wf14_shutdown_slusbn5.gif
Figure 26. FCCM Shutdown Operation
TPS53515 wf16_shutdown_slusbn5.gif
Figure 28. FCCM Shutdown Operation
TPS53515 wf18_ovp_slusbn5.gif
Figure 30. Overvoltage Protection
TPS53515 thermal_slusbn5.gif
fSW = 500 kHz VI = 12 V VO = 5 V
IO = 12 A COUT= 10 x 22 µF ( 1206, 6.3 V, X5R)
SNB = 3 Ω+ 470 pF RBOOT= 0 Ω
Inductor: LOUT = 1 µH 2.1 mΩ (typ)
PCMC135T-1R0MF 12.6 mm × 13.8 mm × 5 mm
Figure 32. SP1: 75.6℃, SP2: 57.7℃ (Inductor)