The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.
The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.
The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.
Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.
Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
TPS54116-Q1 | WQFN (24) | 4.00 mm × 4.00 mm |
Changes from A Revision (August 2016) to B Revision
Changes from * Revision (August 2016) to A Revision
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage Range | PVIN, AVIN, ENSW, ENLDO, PGOOD | -0.3 | 7 | V |
FB, COMP, SS/TRK, ILIM | -0.3 | 3 | V | |
RT/SYNC | -0.3 | 6 | V | |
BOOT with respect to SW | -0.3 | 7 | V | |
LDOIN, VTTSNS, VDDQSNS | -0.3 | 3.6 | V | |
SW | -0.6 | 7 | V | |
SW, 10-ns transient | -4 | 10 | V | |
VTT, VTTREF | -0.3 | 3.6 | V | |
Current Range | RT/SYNC | -100 | 100 | µA |
PGOOD | -5 | 5 | mA | |
Operating junction temperature | -40 | 150 | °C | |
Storage temperature, Tstg | -65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) | ±2000 | V |
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
V(AVIN), V(PVIN) | Input voltage | 2.95 | 6 | V |
VOUT | Buck output voltage | 0.6 | 4.5 | V |
IOUT | Buck output current | 0 | 4 | A |
V(VDDQSNS) | VDDQSNS input voltage | 1 | 3.5 | V |
V(LDOIN) | LDOIN input voltage | VTT + VDO | 3.5 | V |
V(VTT), V(VTTREF) | VTT and VTTREF output voltage | 0.5 | 3.5 | V |
THERMAL METRIC(1) | TPS54116-Q1 | UNIT | |
---|---|---|---|
RTW (WQFN) | |||
24 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 36.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 35.0 | |
RθJB | Junction-to-board thermal resistance | 14.3 | |
ψJT | Junction-to-top characterization parameter | 0.4 | |
ψJB | Junction-to-board characterization parameter | 14.4 | |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 4.6 |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY VOLTAGE (AVIN and PVIN PINS) | ||||||
AVIN and PVIN operating | 2.95 | 6 | V | |||
AVIN internal UVLO threshold | AVIN rising | 2.7 | 2.8 | V | ||
AVIN internal UVLO hysteresis | 0.05 | 0.12 | V | |||
Iq shutdown | V(ENSW) = V(ENLDO) = 0 V, V(VDDQSNS) = 1.8 V, TJ = 25°C | 1 | 3.5 | µA | ||
Iq operating — LDO and buck enabled | V(ENSW) = V(ENLDO) = V(AVIN) = 5 V, V(FB) = 0.7 V, V(VDDQSNS) = 1.8 V, TJ = 25°C | 650 | 800 | µA | ||
Iq operating — LDO enabled, buck disabled | V(ENLDO) = V(AVIN) = 5 V, V(ENSW) = 0 V, V(VDDQSNS) = 1.8 V, TJ = 25°C | 190 | 300 | µA | ||
Iq operating — LDO disabled, buck enabled | V(ENSW) = V(AVIN) = 5 V, V(ENLDO) = 0 V, V(FB) = 0.7 V, V(VDDQSNS) = 1.8 V, TJ = 25°C | 570 | 700 | µA | ||
ENABLE (ENSW and ENLDO PINS) | ||||||
VENRISING | ENLDO rising threshold | ENLDO voltage ramping up | 1.20 | V | ||
VENFALLING | ENLDO falling threshold | ENLDO voltage ramping down | 1.17 | |||
ENLDO input current above voltage threshold | V(ENLDO) = Enable threshold + 50 mV | -4.4 | µA | |||
Ip | ENLDO input current below voltage threshold | V(ENLDO) = Enable threshold - 50 mV | -1.7 | |||
Ih | ENLDO hysteresis current | -2.7 | ||||
VENRISING | ENSW rising threshold | ENSW voltage ramping up | 1.20 | V | ||
VENFALLING | ENSW falling threshold | ENSW voltage ramping down | 1.17 | |||
ENSW input current above voltage threshold | V(ENSW) = Enable threshold + 50 mV | -4.4 | µA | |||
Ip | ENSW input current below voltage threshold | V(ENSW) = Enable threshold - 50 mV | -1.7 | |||
Ih | ENSW hysteresis current | -2.7 | ||||
Input current above voltage threshold with ENLDO and ENSW connected | V(ENLDO) = V(ENSW) = Enable threshold + 50 mV | -8.5 | µA | |||
Input current below voltage threshold with ENLDO and ENSW connected | V(ENLDO) = V(ENSW) = Enable threshold - 50 mV | -3.4 | µA | |||
Hysteresis current with ENLDO and ENSW connected | -5.1 | µA | ||||
VOLTAGE REFERENCE AND ERROR AMPLIFIER (FB AND COMP PINS) | ||||||
VREF | Voltage Reference | 0.594 | 0.6 | 0.606 | V | |
FB pin input current | 7 | nA | ||||
gmEA | Error Amp transconductance (gm) | -2 µA < I(COMP) < 2 µA, V(COMP) = 1 V | 260 | 360 | µS | |
Error Amp source/sink | V(COMP) = 1 V, V(FB) = 100 mV overdrive | 22 | µA | |||
MOSFETS AND POWER STAGE (SW AND BOOT PINS) | ||||||
High side switch resistance | V(BOOT-SW) = 5 V | 33 | 66 | mΩ | ||
V(BOOT-SW) = 3.3 V | 42 | 84 | ||||
Low side switch resistance | V(PVIN) = 5 V | 25 | 50 | mΩ | ||
V(PVIN) = 3.3 V | 30 | 60 | ||||
BOOT-SW UVLO | V(PVIN) = 2.95 V | 2.2 | V | |||
High-side FET current limit | V(PVIN) = 6V, R(ILIM) = 100k | 5.2 | 6.6 | 8.2 | A | |
High-side FET current limit | V(PVIN) = 6V, R(ILIM) = 200k | 1.5 | 3 | 3.8 | A | |
Low-side FET reverse current limit | 2 | 4.5 | A | |||
gmPS | V(COMP) to I(SW)peak transconductance | R(ILIM) = 100k | 16 | A/V | ||
Minimum pulse width | Measured at 50% points on V(SW), IOUT = 2 A | 60 | ns | |||
Minimum pulse width | Measured at 50% points V(SW), V(PVIN) = 5 V, IOUT = 0 A, TJ = -40°C to 125°C | 100 | 125 | ns | ||
Minimum off-time | Prior to skipping off pulses, IOUT = 2 A | 60 | ns | |||
TIMING RESISTOR AND EXTERNAL CLOCK (RT/SYNC PIN) | ||||||
Switching frequency range using RT mode | 100 | 2500 | kHz | |||
Switching frequency | R(RT/SYNC) = 150 kΩ | 370 | 400 | 430 | kHz | |
R(RT/SYNC) = 27 kΩ | 1910 | 2070 | 2230 | kHz | ||
V(RT/SYNC) > 2.2 V or V(RT/SYNC) < 0.35 V | 340 | 420 | 480 | kHz | ||
Switching frequency range using SYNC mode | 100 | 2500 | kHz | |||
Minimum SYNC input pulse width | 10 | ns | ||||
RT/SYNC high threshold | 1.5 | 2.2 | V | |||
RT/SYNC low threshold | 0.35 | 0.4 | V | |||
RT/SYNC rising edge to SW rising edge delay | fSW = 500 kHz | 30 | 45 | 80 | ns | |
RT to SYNC lock in time | R(RT/SYNC) = 150 kΩ | 55 | µs | |||
SYNC to RT lock in time | 60 | µs | ||||
Internal RT to SYNC lock in time | Logic high or logic low at RT/SYNC to SYNC signal | 55 | µs | |||
SYNC to internal RT lock in time | SYNC signal to logic high or logic low at RT/SYNC | 60 | µs | |||
SOFT START AND TRACKING (SS/TRK PIN) | ||||||
VSSTHR | SS voltage threshold | 0.15 | V | |||
ISS | Charge Current | V(SS/TRK) < VSSTHR | 47 | µA | ||
V(SS/TRK) > VSSTHR | 1.5 | 2.4 | 3.2 | µA | ||
SS/TRK to FB matching | V(SS/TRK) = 0.3 V | 60 | mV | |||
SS/TRK to reference crossover | 98% normal | 0.85 | 1 | V | ||
SS/TRK discharge voltage (overload) | V(FB) = 0 V | 120 | mV | |||
SS/TRK discharge voltage (fault) | V(FB) = 0 V | 5 | mV | |||
SS/TRK discharge current (overload) | V(FB) = 0 V, V(SS/TRK) = 0.4 V | 160 | µA | |||
SS/TRK discharge current (AVIN UVLO, ENSW low, thermal fault) | V(AVIN) = 5 V, V(SS/TRK) = 0.4 V | 760 | µA | |||
POWER GOOD (PGOOD PIN) | ||||||
Threshold | V(FB) falling (fault) | 91 | 95 | % VREF | ||
V(FB) rising (good) | 94 | |||||
V(FB) rising (fault) | 105 | 109 | ||||
V(FB) falling (good) | 106 | |||||
Hysteresis | V(FB) falling and rising | 3 | ||||
Output high leakage | V(FB) = VREF, V(PGOOD) = 5.5 V | 5 | 125 | nA | ||
On resistance | V(AVIN) = 2.95 V | 85 | 170 | Ω | ||
Minimum V(AVIN) for valid output | V(PGOOD) < 0.5 V, I(PGOOD) = 100 µA | 1.3 | 1.7 | V | ||
TERMINATION REGULATOR INPUTS (VLDOIN AND VDDQSNS PINS) | ||||||
V(LDOIN) Operating | 3.5 | V | ||||
VDO | DC V(LDOIN) – V(VTT) dropout | 1.2 V < V(VDDQSNS) < 2.5 V, I(VTT) = 0.5 A, V(VTT) = V(VTTREF) - 40 mV | 0.15 | V | ||
VDO | DC V(LDOIN) – V(VTT) dropout | 1.2 V < V(VDDQSNS) < 2.5 V, I(VTT) = 1.5 A, V(VTT) = V(VTTREF) - 40 mV | 0.45 | V | ||
VLDOIN supply current | V(LDOIN) = 1.8 V, TJ = 25°C | 1 | µA | |||
VDDQSNS input current | V(VDDQSNS) = 1.8 V | 39 | 46 | µA | ||
VTTREF OUTPUT (VTTREF PIN) | ||||||
V(VTTREF) | VTTREF output voltage | V(VDDQSNS)/2 | V | |||
V(VTTREF)TOL | VTTREF output voltage difference from V(VDDQSNS)/2 | |I(VTTREF)| < 10 mA, V(VDDQSNS) = 1.8 V | -18 | 18 | mV | |
|I(VTTREF)| < 10 mA, V(VDDQSNS) = 1.5 V | -15 | 15 | ||||
|I(VTTREF)| < 10 mA, V(VDDQSNS) = 1.2 V | -15 | 15 | ||||
|I(VTTREF)| < 5 mA, V(VDDQSNS) = 1.2 V | -12 | 12 | ||||
I(VTTREF)SRC | VTTREF source current limit | V(VDDQSNS) = 1.8 V, V(VTTREF) = 0 V | 10 | 18 | mA | |
I(VTTREF)SNK | VTTREF sink current limit | V(VDDQSNS) = 0 V, V(VTTREF) = 1.8 V | 10 | 19 | mA | |
I(VTTREF)DIS | VTTREF discharge current | TJ = 25°C, V(VTTREF) = 0.5V, V(ENLDO) = 0 V | 0.9 | 1.1 | mA | |
VTT OUTPUT (VTT PIN) | ||||||
V(VTT) | VTT output voltage | V(VTTREF) | V | |||
V(VTT)TOL | VTT output voltage tolerance to VTTREF | |I(VTT)|≤ 10 mA, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V | -20 | 20 | mV | |
|I(VTT)|≤ 1 A, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V | -30 | 30 | ||||
|I(VTT)|≤ 1.5 A, 1.2 V ≤ V(VDDQSNS) ≤ 1.8 V | -40 | 40 | ||||
I(VTT)SRC | VTT source current limit | V(VDDQSNS) = 1.8 V, V(VTT) = V(VTTSNS) = 0.7 V | 1.5 | 2.5 | A | |
I(VTT)SNK | VTT sink current limit | V(VDDQSNS) = 1.8 V, V(VTT) = V(VTTSNS) = 1.1 V | 1.5 | 2.5 | A | |
I(VTTSNS)BIAS | VTTSNS input bias current | -0.1 | 0.1 | µA | ||
I(VTT)DIS | VTT discharge current | TJ = 25°C, V(VTT) = 0.5 V, V(ENLDO) = 0 V | 4.8 | 6 | mA | |
THERMAL SHUTDOWN | ||||||
Thermal shutdown temperature | 175 | ℃ | ||||
Thermal shutdown hysteresis | 16 | ℃ |
V(PVIN) = 5 V |
TA = 25°C |
TA = 25°C |
R(RT/SYNC) = 27 kΩ |
V(SS/TRK) < VSS(THR) |
TA = 25°C |
VDDQSNS = 1.8 V | VIN = 5 V |
VDDQSNS = 1.35 V | VIN = 5 V |
VDDQSNS = 1.8 V | VIN = 5 V |
VDDQSNS = 1.35 V | VIN = 5 V |
VDDQSNS = 1.5 V | VIN = 5 V |
V(VTT) = 1.5 V | VIN = 5 V | I(VTT) = –1 A |
TA = 25°C |
fSYNC = 2.1 MHz | VIN = 5 V | L = 744373240068 |
TA = 25°C |
fSYNC = 400 kHz | VIN = 5 V | L = 744310200 |
TA = 25°C |
V(PVIN) = 5 V | TA = 25°C |
R(RT/SYNC) = 150 kΩ |
Internal RT |
V(SS/TRK) > VSS(THR) | ||
VDDQSNS = 1.5 V | VIN = 5 V |
VDDQSNS = 1.2 V | VIN = 5 V |
VDDQSNS = 1.5 V | VIN = 5 V |
VDDQSNS = 1.2 V | VIN = 5 V |
V(VTT) = 1.5 V | VIN = 5 V | I(VTT) = +1 A |
TA = 25°C |
fSYNC = 2.1 MHz | VIN = 3.3 V | L = 744373240068 |
TA = 25°C |
fSYNC = 400 kHz | VIN = 3.3 V | L = 744310200 |
TA = 25°C |
The TPS54116-Q1 is a 6-V, 4-A, synchronous step-down (buck) converter with two integrated N-channel MOSFETs and integrated 1-A sink/source double data rate (DDR) VTT termination regulator with a VTTREF buffed reference output.
To improve the performance during line and load transients the buck converter implements a constant frequency, peak current mode control which reduces output capacitance and simplifies external frequency compensation design. The wide switching frequency range of 100 kHz to 2500 kHz allows for efficiency and size optimization when selecting the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/SYNC pin. The RT/SYNC pin can also be used to synchronize the power switch turn on to the rising edge of an external clock. The switching frequency can be set using an internal resistor by pulling the RT/SYNC below the low threshold or above the high threshold.
The TPS54116-Q1 has a typical default start-up voltage of 2.7 V. The ENSW pin can be used to enable the buck converter and the ENLDO pin can be used to enable VTT and VTTREF. The ENSW and ENLDO pins have internal pullup current sources that can be used to adjust the input voltage under voltage lockout (UVLO) with two external resistors. In addition, the pullup current provides a default condition when the ENSW or ENLDO pin is floating for the device to operate. The total operating current for the TPS54116-Q1 is typically 650 µA when not switching and under no load. When the device is disabled, the supply current is less than 3.5 µA.
The integrated 33-mΩ and 25-mΩ MOSFETs allow for high-efficiency power supply designs with continuous output currents up to 4 amperes. The TPS54116-Q1 reduces the external component count by integrating the boot recharge diode. The bias voltage for the integrated high-side MOSFET is supplied by a capacitor between the BOOT and SW pins. The boot capacitor voltage is monitored by an UVLO circuit and turns off the high-side MOSFET when the voltage falls below the BOOT-SW UVLO threshold. This BOOT circuit allows the TPS54116-Q1 to operate approaching 100% duty cycle. The output voltage can be stepped down to as low as the 0.60-V reference.
The TPS54116-Q1 features monotonic start-up under prebias conditions. The low-side FET turns on for a short time period every cycle before the output voltage reaches the prebiased voltage. This ensures the boot capacitor has enough charge to turn on the top FET when the output voltage reaches the prebiased voltage.
The TPS54116-Q1 has a power good comparator (PGOOD) with 3% hysteresis. Excessive output overvoltage transients are minimized by taking advantage of the overvoltage power good comparator. When the regulated output voltage (as sensed by the FB voltage) is greater than 109% of the nominal voltage, the overvoltage comparator is activated, and the high-side MOSFET is turned off and masked from turning on until the output voltage is lower than 106%.
The SS/TRK (soft-start or tracking) pin is used to minimize inrush currents or provide power supply sequencing during power up. A small value capacitor should be coupled to the pin for soft-start. The SS/TRK pin is discharged before the output power up to ensure a repeatable restart after an over temperature fault, UVLO fault or disabled condition. To optimize the output startup waveform, two levels of SS/TRK output current are implemented.
The TPS54116-Q1 limits the peak inductor current by sensing the current through the high-side MOSFET with cycle-by-cycle protection. The peak current limit is adjusted using a resistor to ground on the ILIM pin. The reverse current through the low-side MOSFET is also limited.
The 10-mA VTTREF buffered reference uses an internal resistor divider to regulate its output within 49% to 51% of VDDQSNS. The 1-A VTT termination regulates to VTTREF and maintains fast transient response with only 2 × 10-µF ceramic output capacitance. Remote sensing of VTT is used for best regulation. The VTT and VTTREF outputs are discharged when disabled with the AVIN UVLO or with ENLDO.
The TPS54116-Q1 uses an adjustable fixed frequency, peak current mode control. The output voltage is compared through external resistors on the FB pin to an internal voltage reference by an error amplifier which drives the COMP pin. An internal oscillator initiates the turn on of the high-side power switch. The error amplifier output is compared to the high-side power switch current. When the power switch current reaches the COMP signal level the high-side power switch is turned off and the low-side power switch is turned on. The COMP pin voltage will increase and decrease as the output current increases and decreases. The device implements a current limit by clamping the internal COMP signal.
An internal ramp is used to provide slope compensation to prevent sub-harmonic oscillations. The peak inductor current limit is constant over the full duty cycle range.
The TPS54116-Q1 has an integrated boot regulator and requires a small ceramic capacitor between the BOOT and SW pins to provide the gate drive voltage for the high-side MOSFET. The value of the ceramic capacitor should be 0.1 µF. A ceramic capacitor with an X7R or X5R grade dielectric is recommended because of the stable characteristics over temperature and voltage.
To improve dropout, the TPS54116-Q1 is designed to operate at 100% duty cycle as long as the BOOT-SW voltage is greater than 2.2 V. The high-side MOSFET is turned off using an UVLO circuit, allowing for the low-side MOSFET to conduct, when the BOOT-SW voltage drops below 2.2 V. Because the supply current sourced from the BOOT pin is low, the high-side MOSFET can remain on for more switching cycles than are required to refresh the capacitor, thus the effective duty of the switching regulator is high.
The TPS54116-Q1 has a transconductance amplifier for the error amplifier. The error amplifier compares the FB voltage to the lower of the SS/TRK pin voltage or the internal 0.6-V voltage reference. The transconductance (gmEA) of the error amplifier is 260 µA/V during normal operation. During soft-start, the gmEA is reduced to 90 µA/V. The frequency compensation components are added to the COMP pin to ground.
When operating at current limit the COMP pin voltage is clamped to a maximum level to improve response when the load current decreases. When FB is greater than the internal voltage reference or SS/TRK the COMP pin voltage is clamped to a minimum level and the devices enters a high-side skip mode.
The voltage reference system produces a precise ±1% voltage reference over temperature by scaling the output of a temperature stable bandgap circuit. The FB voltage is regulated to the voltage reference. The output voltage is set with a resistor divider from the output node to the FB pin. It is recommended to use divider resistors with 1% tolerance or better. Start with a 10.0 kΩ for the bottom resistor RFBB and use the Equation 1 to calculate RFBT. The maximum recommend resistance value for the bottom resistor is 100 kΩ.
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The TPS54116-Q1 is enabled when the AVIN pin voltage exceeds 2.7 V and is disabled when it falls below 2.65 V. If an application requires a higher under-voltage lockout (UVLO) or more hysteresis, use the ENSW or ENLDO pins as shown in Figure 41 to adjust the input voltage UVLO by using two external resistors. The EN pin has an internal pull-up current source (Ip) of 1.7 µA that provides the default condition of the TPS54116-Q1 operating when the EN pin floats. Once the EN pin voltage exceeds 1.2 V, an additional 2.7 μA hysteresis current (Ih) is added. When the EN pin is pulled below 1.17 V, the 2.7 μA is removed. This additional current facilitates input voltage hysteresis. It is recommended to use the EN resistors to set the UVLO falling threshold (VSTOP) at 2.65V or higher. The rising threshold (VSTART) should be set to provide enough hysteresis to allow for any input supply variations. Equation 2 can be used to calculate the top resistor in the EN divider and Equation 3 is used to calculate the bottom resistor.
The ENSW and ENLDO can also be tied in parallel. Calculations can be done the same but with the increased EN current of Ip = 3.4 µA and Ih = 5.1 µA.
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Where:
The TPS54116-Q1 regulates to the lower of the SS/TRK pin and the internal reference voltage. A capacitor on the SS/TRK pin to ground implements a soft start time. Before the SS pin reaches the voltage threshold VSSTHR of 0.15 V, the charge current is about 47 μA. The TPS54116-Q1 internal pull-up current source of 2.4 μA charges the external soft start capacitor after the SS pin voltage exceeds VSSTHR. Equation 4 calculates the required soft start capacitor value where tSS is the desired soft start time for the output voltage to reach 90% its final value in ms and CSS is the required capacitance in nF.
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If during normal operation, AVIN goes below the UVLO, ENSW pin pulled below 1.17 V, or a thermal shutdown event occurs, the TPS54116-Q1 stops switching. When the AVIN goes above UVLO, ENSW is released or pulled high, or a thermal shutdown is exited, then SS/TRK is discharged to below 5 mV before reinitiating a powering up sequence. The FB voltage will follow the SS/TRK pin voltage with a 60 mV offset up to 90% of the internal voltage reference. When the SS/TRK voltage is greater than 90% of the internal reference voltage the offset increases as the effective system reference transitions from the SS/TRK voltage to the internal voltage reference.
When the COMP pin voltage is clamped by the maximum COMP clamp in an overload condition the soft-start pin is discharged to near the FB voltage. When the overload condition is removed, the soft-start circuit controls the recovery from the fault output level to the nominal regulation voltage. At the beginning of recovery a spike in the output voltage may occur as the COMP voltage transitions to the value determined by the loop.
The TPS54116-Q1 features monotonic startup into pre-biased output. The low-side MOSFET turns on for a very short time period every cycle before the output voltage reaches the pre-biased voltage. This ensures the BOOT-SW cap has enough charge to turn on the high-side MOSFET when the output voltage reaches the pre-biased voltage. The low-side MOSFET reverse current protection provides another layer of protection but it should not be reached due to the implemented prebias function.
The PGOOD pin is an open-drain output requiring an external pullup resistor to output a high signal. Once the FB pin is between 94% and 106% of the internal voltage reference, the PGOOD pin is de-asserted and the pin floats. A pull up resistor between the values of 10 kΩ and 100 kΩ to a voltage source that is 6 V or less is recommended. The PGOOD is in a defined state once the AVIN input voltage is greater than 1.3 V but with reduced current sinking capability.
The PGOOD pin is pulled low when the FB is lower than 91% or greater than 109% of the nominal internal reference voltage. The PGOOD is also pulled low if AVIN falls below its UVLO, ENSW pin is pulled low or the TPS54116-Q1 enters thermal shutdown.
Many of the common power supply sequencing methods can be implemented using the SS/TRK, ENSW and PGOOD pins. The sequential method can be implemented using an open-drain or collector output of a power on reset pin of another device. An example sequential method is shown in Figure 42. PGOOD is connected to the EN pin on the next power supply, which will enable the second power supply once the first supply reaches regulation.
The switching frequency of the TPS54116-Q1 is adjustable over a wide range from 100 kHz to 2500 kHz by placing a maximum of 620 kΩ and minimum of 22 kΩ, respectively, on the RT/SYNC pin. Alternatively the RT/SYNC pin can be tied above the high threshold or below the low threshold to use an internal RT resistor to set the switching frequency to 420 kHz. The RT/SYNC is typically 0.5 V and the current through the resistor sets the switching frequency. To determine the timing resistance for a given switching frequency, refer to the curve in Figure 16 and Figure 17 or use Equation 5. For a given RT resistor the nominal switching frequency can be calculated with Equation 6. To reduce the solution size one would typically set the switching frequency as high as possible, but tradeoffs of the supply efficiency, maximum input voltage and minimum controllable on time should be considered. The minimum controllable on time is typically 60 ns at 2-A load current and 100 ns at no load, and will limit the maximum operating input voltage or minimum output voltage.
The RT/SYNC pin can also be used to synchronize the converter to an external system clock. When using the internal RT resistor, the TPS54116-Q1 cannot be synchronized to an external clock. The synchronization frequency range is 100 kHz to 2500 kHz. The rising edge of SW will be synchronized to the rising edge of RT/SYNC. To implement the synchronization feature in a system connect a square wave to the RT/SYNC pin with on-time at least 10 ns. The square wave amplitude at this pin must transition lower than 0.35 V and higher than 2.2 V.
See Figure 43 for synchronizing to a high impedance system clock. See Figure 44 and Figure 45 for synchronizing to a low impedance system clock. A tri-state buffer with its output directly connected to the RT/SYNC pin is the recommended method to accomodate a wide range of external clock frequencies and duty cycles. Alternatively an AC blocking capacitor circuit can be used when synchronizing to frequencies greater than 800 kHz and with clock signals with duty cycle near 50%. When using an AC coupling capacitor to interface with an external clock, RT/SYNC is not actively pulled low by the external clock. As a result the TPS54116-Q1 begins its transition back to RT mode while the external clock is low. When connecting the RT/SYNC pin to the external clock source, it is important to minimize routing connected to the RT/SYNC pin as much as possible to minimize noise sensitivity when operating in RT mode.
The TPS54116-Q1 implements current mode control which uses the COMP pin voltage to turn off the high-side MOSFET and turn on the low-side MOSFET on a cycle-by-cycle basis. Each cycle the switch current and the COMP pin voltage are compared, when the peak switch current intersects the COMP voltage the high-side switch is turned off. During overcurrent conditions that pull the output voltage low, the error amplifier will respond by driving the COMP pin high, increasing the switch current. The error amplifier output is clamped internally. This clamp functions as a high-side switch current limit.
A resistor placed from ILIM to AGND sets the peak current limit of the buck converter in the TPS54116-Q1. A 100 kΩ resistor sets it to the maximum value and a 200 kΩ resistor sets it to the minimum value. Any resistor within this range can be used. Figure 12 shows the relationship between peak current limit and ILIM resistor. To determine the resistor value for a target current limit use Equation 7.
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The TPS54116-Q1 also implements low-side current protection by detecting the voltage over the low-side MOSFET. When the converter sinks current through the low-side MOSFET is more than 4.5 A, the control circuit will turn the low-side MOSFET off immediately for the rest of the clock cycle. Under this condition, both the high-side and low-side are off until the start of the next cycle.
The TPS54116-Q1 incorporates an overvoltage transient protection (OVTP) circuit to minimize voltage overshoot when recovering from output fault conditions or strong unload transients. The OVTP feature minimizes the output overshoot by implementing a circuit to compare the FB pin voltage to OVTP threshold which is 109% of the internal voltage reference. If the FB pin voltage is greater than the OVTP threshold, the high-side MOSFET is disabled preventing current from flowing to the output and minimizing output overshoot. The output voltage can overshoot the 109% threshold as the current in the inductor discharges to 0 A. When the FB voltage drops lower than the OVTP threshold the high-side MOSFET is allowed to turn on the next clock cycle.
The TPS54116-Q1 integrates a high-performance, low-dropout (LDO) linear regulator (VTT) that has ultimate fast response to track ½ VDDQSNS within 40 mV at all conditions, and its current capability is 1.5 A peak current for both sink and source directions. Two 10-µF (or greater) ceramic capacitor(s) need to be attached close to the VTT pin for stable operation. X5R grade or better is recommended. To achieve tight regulation with minimum effect of trace resistance, the remote sensing terminal, VTTSNS, should be connected to the positive terminal of the output capacitor(s) as a separate trace from the high current path from the VTT pin.
The device has a dedicated pin, VLDOIN, for VTT power supply to minimize the LDO power dissipation on user application. The minimum VLDOIN voltage is 0.45 V above the ½ VDDQSNS voltage.
The VTTREF pin has a 10 mA sink and source current capability, and regulates to within 49% to 51% of VDDQSNS. A 0.22-µF ceramic capacitor needs to be attached close to the VTTREF terminal for stable operation. X5R grade or better is recommended.
The device implements an internal thermal shutdown to protect itself if the junction temperature exceeds 175°C. The thermal shutdown has a hysteresis of 16°C. When the junction temperature exceeds thermal trip threshold, thermal shutdown forces the device to stop switching and discharges both VTT and VTTREF. When the die temperature decreases below 159°C, the device reinitiates the power-up sequence by discharging the SS/TRK pin.
The enable pins and an AVIN UVLO are used to control turn on and turn off of the TPS54116-Q1. The device becomes active when V(AVIN) exceeds the 2.7 V typical UVLO and when either V(ENSW) or V(ENLDO) exceeds 1.20 V typical. The ENSW pin is used to control the turn on and turn off of the buck converter. The ENLDO pin is used to control the turn on and turn off of the VTTREF and VTT outputs of the termination regulator. The ENSW and ENLDO pins both have an internal current source to enable their respective outputs when left floating. Both ENSW and ENLDO need to be pulled low to put the device into a low quiescent current state.
NOTE
Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality.
The TPS54116-Q1 is a fully integrated power solution for DDR2, DDR3 and DDR3L memory supplying VDDQ, VTTREF and VTT as shown in Figure 46. It can also be used to power LPDDR2, LPDDR3 and DDR4 memory but an additional power supply is required for VDD1 or VPP as shown in Figure 47. The TPS54116-Q1 can supply 4 A for VDDQ and 1 A for VTT. The sourcing current for VTT comes from VDDQ and must be included as part of the total VDDQ load current. Use the following design procedure to select component values for the TPS54116-Q1. This procedure illustrates the design of a high-frequency switching regulator using ceramic output capacitors. Alternatively the WEBENCH® software can be used to generate a complete design. The WEBENCH® software uses an interactive design procedure and accesses a comprehensive database of components when generating a design. This section presents a simplified discussion of the design process.
DESIGN PARAMETERS | EXAMPLE VALUES |
---|---|
Input Voltage | 5 V nominal, 2.95 V to 5.25 V |
Output Voltage | 1.5 V |
Maximum Output Current (VDDQ) | 4 A |
Maximum Output Current (VTT) | 1 A |
Output Voltage Ripple (VDDQ) | 0.5% of VOUT |
Transient Response 1 A to 3 A load step | ΔVOUT = 4 % |
Start Input Voltage (rising VIN) | 2.9 V |
Stop Input Voltage (falling VIN) | 2.6 V |
The first step is to decide on a switching frequency for the regulator. The buck converter is capable of running from 100 kHz to 2.5 MHz. Typically the highest switching frequency possible is desired because it will produce the smallest solution size. A high switching frequency allows for lower valued inductors and smaller output capacitors compared to a power supply that switches at a lower frequency. Additionally in applications with EMI requirements, such as automotive, choosing a switching frequency of 2.1 MHz is desired to keep the switching noise above the medium wave band or AM band. They main trade off made with selecting a higher switching frequency is extra switching power loss, which hurt the converter’s efficiency.
The maximum switching frequency for a given application is limited by the minimum on-time of the converter and is estimated with Equation 8. For this application with the maximum minimum on-time of 125 ns at no load and 5.25 V maximum input voltage the maximum switching frequency is 2.28 MHz. A switching frequency of 2.1 MHz is selected to stay above the AM band. Equation 9 calculates R14 to be 26.8 kΩ. A standard 1% 26.7 kΩ value was chosen in the design.
To calculate the value of the output inductor, use Equation 10. KIND is a ratio that represents the amount of inductor ripple current relative to the maximum output current. The inductor ripple current is filtered by the output capacitor. Therefore, choosing high inductor ripple currents impacts the selection of the output capacitor since the output capacitor must have a ripple current rating equal to or greater than the inductor ripple current. Additionally the inductor current ripple is used as part of the PWM control system. Choosing small inductor ripple currents can degrade the transient response performance or introduce jitter in the duty cycle. In general, the inductor ripple value is at the discretion of the designer; however, KIND is normally from 0.1 to 0.3 for the majority of applications giving a peak to peak ripple current range of 0.4 A to 1.2 A. It is recommended to always keep the peak to peak ripple current above 0.4 A because with a current mode control the inductor current ramp is used in the PWM control system.
For this design example, KIND = 0.3 is used and the inductor value is calculated to be 0.43 μH. The next standard value 0.68 µH is selected. It is important that the RMS current and saturation current ratings of the inductor not be exceeded. The RMS and peak inductor current can be found from Equation 12 and Equation 13. For this design, the RMS inductor current is 4.0 A and the peak inductor current is 4.4 A. The chosen inductor is a WE 744373240068. It has a saturation current rating of 10.0 A (20% inductance loss) and a RMS current rating of 5.5 A (40 °C. temperature rise). The series resistance is 16.0 mΩ typical.
The current flowing through the inductor is the inductor ripple current plus the output current. During power up, faults or transient load conditions, the inductor current can increase above the calculated peak inductor current level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of the device. For this reason, the most conservative approach is to specify an inductor with a saturation current rating equal to or greater than the switch current limit rather than the steady-state peak inductor current. Additionally if a hard short on the output occurs in a fault condition the peak inductor current can exceed the current limit and may reach up to 10 A. The peak current limit in this scenario is only limited by the minimum on-time of the TPS54116-Q1 and the parasitic DC voltage drops in the circuit. The peak current during a hard short will vary with the switching frequency and only exceeds the current limit when using the TPS54116-Q1 with higher switching frequencies like 2.1 MHz. To protect the inductor in a hard output short the inductor should be rated for this current.
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There are three primary considerations for selecting the value of the output capacitor. The output capacitor determines the modulator pole, the output voltage ripple, and how the regulator responds to a large change in load current. The output capacitance needs to be selected based on the more stringent of these three criteria.
The desired response to a large change in the load current is the first criteria and is often the most stringent. The output capacitor needs to supply the increased load current until the regulator responds to the load step. The regulator does not respond immediately to a large, fast increase in the load current such as transitioning from no load to a full load. The regulator usually needs two or more clock cycles for the control loop to sense the change in output voltage and adjust the peak switch current in response to the higher load. The output capacitance must be large enough to supply the difference in current for 2 clock cycles to maintain the output voltage within the specified range. At higher switching frequencies the fastest response time is about 4 µs. Equation 14 shows the minimum output capacitance necessary, where ΔIOUT is the change in output current, tresponse is the regulators response time and ΔVOUT is the allowable change in the output voltage. The minimum of 2/fsw or 4 µs should be used for the response time in the output capacitance calculation. It is important to realize the response to a transient load also depends on the loop compensation and slew rate of the transient load. This calculation assumes the loop compensation is designed for the output filter with the equations later on in this procedure.
For this example, the transient load response is specified as a 4% change in VOUT for a load step of 2 A. Therefore, ΔIOUT is 2 A and ΔVOUT = 0.04 × 1.5 = 60 mV. Using these numbers with a 4 µs response time gives a minimum capacitance of 133 μF. This value does not take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR is usually small enough to be ignored. Aluminum electrolytic and tantalum capacitors have higher ESR that must be considered for load step response.
Equation 15 calculates the minimum output capacitance needed to meet the output voltage ripple specification. Where fsw is the switching frequency, Vripple is the maximum allowable output voltage ripple, and Iripple is the inductor ripple current. In this case, the maximum output voltage ripple is 7.5 mV. Under this requirement, Equation 15 yields 6.3 µF.
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Equation 16 calculates the maximum combined ESR the output capacitors can have to meet the output voltage ripple specification and this shows the ESR should be less than 10 mΩ. In this case ceramic capacitors will be used and the combined ESR of the ceramic capacitors in parallel is much less than 10 mΩ. Capacitors also generally have limits to the amount of ripple current they can handle without failing or producing excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor data sheets specify the RMS (Root Mean Square) value of the maximum ripple current. Equation 17 can be used to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 17 yields 220 mA. Ceramic capacitors used in this design will have a ripple current rating much higher than 220 mA.
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The value of a ceramic capacitor varies significantly over temperature and the amount of DC bias applied to the capacitor. The capacitance variations due to temperature can be minimized by selecting a dielectric material that is stable over temperature. X5R and X7R ceramic dielectrics are usually selected for power regulator capacitors because they have a high capacitance to volume ratio and are fairly stable over temperature. The output capacitor must also be selected with the DC bias taken into account. The capacitance value of a capacitor decreases as the DC bias across a capacitor increases. For this application example, three 47 μF 10 V 1210 X7R ceramic capacitors each with 8 mΩ of ESR at the fsw are used. The estimated capacitance after derating shown on the capcaitor manufacturer's website with 1.5 V DC bias is 51.4 µF each. With 3 parallel capacitors the total output capacitance is 154 µF and the ESR is 2.7 mΩ.
The TPS54116-Q1 requires a high quality ceramic, type X5R or X7R, input decoupling capacitor of at least 10 μF of effective capacitance placed across the PVIN and PGND pins and in some applications a bulk capacitance. The effective capacitance includes any DC bias effects. The voltage rating of the input capacitor must be greater than the maximum input voltage. The capacitor must also have a ripple current rating greater than the maximum RMS input current of the TPS54116-Q1. The RMS input current can be calculated using Equation 18. An input decoupling capacitor of 1 µF must also be placed at the AVIN pin to ensure a stable input voltage to the internal control circuits.
For this example design, a ceramic capacitor with at least a 10 V voltage rating is required to support the maximum input voltage. For this example, one 47 µF 1210 X7R, one 10 µF 0603 X7R and one 0.1 μF 0603 X7R 10 V capacitors in parallel have been selected for the PVIN to PGND pins. Additionally one 1 µF 0603 X5R 10 V capacitor is selected for the AVIN pin. The 0.1 µF at the PVIN pin is used to better bypass the higher frequency content when the high-side MOSFET switches on and off. Based on the capacitor manufacturer's website, the total input capacitance derates to 34 µF at the nominal input voltage of 5 V. The input capacitance value determines the input ripple voltage of the regulator. The input voltage ripple can be calculated using Equation 19. Using the design example values, Ioutmax = 4 A, Cin = 34 μF, fSW = 2.1 MHz, yields an input voltage ripple of 14 mV and a rms input ripple current of 1.9 A.
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The soft-start capacitor determines the minimum amount of time it takes for the output voltage to reach its nominal programmed value during power up. This is useful if a load requires a controlled voltage slew rate. This is also used if the output capacitance is very large and would require large amounts of current to quickly charge the capacitor to the output voltage level. The large currents necessary to charge the capacitor may make the TPS54116-Q1 reach the current limit or excessive current draw from the input power supply may cause the input voltage rail to sag. Limiting the output voltage slew rate solves both of these problems.
The soft-start capacitor value can be calculated using Equation 20. For the example circuit, the soft-start time is not too critical since the output capacitor value of 3 x 47 µF does not require much current to charge to 1.5 V. With the higher switching frequency used in this example a faster start-up time improves the start up behavior. Near the beginning of the start up time when the output voltage is low the minimum on-time of the converter is too large to regulate the output causing additional ripple on the output. A faster start-up time will reduce the time the converter spends in this region. The example circuit is designed for a soft-start time of 0.6 ms which requires a 3300 pF capacitor.
The Undervoltage Lock Out (UVLO) can be adjusted using an external voltage divider on the ENSW and ENLDO pin of the TPS54116. Each pin can have its own resistor divider if different thresholds are needed for the VTT LDO and the buck converter. If only one threshold is needed only one resistor divider is needed and the pins can be connected in parallel. If connected in parallel the pull up current and hysteresis current should be increased to 3.4 µA and 5.1 µA respectively as shown in the electrical specifications. The UVLO has two thresholds, one for power-up when the input voltage is rising, and one for power-down or brown outs when the input voltage is falling.
For the example design, the supply should turn on and start switching once the input voltage increases above 2.9 V (enabled). After the regulator starts switching, it should continue to do so until the input voltage falls below 2.6 V (UVLO stop). The EN pins are also connected in parallel so the higher pull up current and hysteresis current is used. Equation 2 through Equation 3 can be used to calculate the resistance values necessary. A 45.3 kΩ between PVIN and the EN pins (R1) and a 30.1 kΩ between the EN pins and ground (R2) are used producing a start voltage of 2.85 V and stop voltage of 2.47 V. The 2.47 V stop voltage is below the 2.65 V AVIN UVLO so with this application example the TPS54116-Q1 will turn off due to the AVIN UVLO.
A 0.1 μF ceramic capacitor must be connected between the BOOT and SW pins for proper operation. It is recommended to use a ceramic capacitor with X5R or better grade dielectric. The capacitor should have 10 V or higher voltage rating.
A 100 kΩ resistor is used to pull up the power good signal to VIN when FB conditions are met.
The recommended peak current limit is calculated with Equation 21 using ILpeak from Equation 13. This calculation includes 10% margin for load transients and an additional 1.5 A for the tolerance of the peak current limit. In this application a 100 kΩ resistor is placed from ILIM to AGND to set the peak current limit to its maximum value. For applications requiring a different peak current limit Equation 7 is used to calculate the ILIM resistor.
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For the example design, 10.0 kΩ was selected for R7. Using Equation 22, R5 is calculated as 15.0 kΩ which is a standard 1% resistor.
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There are several methods used to compensate DC - DC regulators. The method presented here is easy to calculate and ignores the effects of the slope compensation that is internal to the device. Because the slope compensation is ignored, the actual cross-over frequency will usually be lower than the cross-over frequency used in the calculations. This method assumes the cross-over frequency is between the modulator pole and the ESR zero and the ESR zero is at least 10 times greater the modulator pole. This is the case when using low ESR output capacitors. Use the WEBENCH software for more accurate loop compensation. These tools include a more comprehensive model of the control loop.
To get started, the modulator pole, fpmod, and the ESR zero, fz1 must be calculated using Equation 23 and Equation 24. For Cout, use a derated value of 154 μF. Use equations Equation 25 and Equation 26, to estimate a starting point for the crossover frequency, fco, to design the compensation. For the example design, fpmod is 2.8 kHz and fzmod is 388 kHz. Equation 25 is the geometric mean of the modulator pole and the esr zero and Equation 26 is the mean of modulator pole and one half the switching frequency or 250 kHz, whichever is larger. For the 2.1 MHz switching frequency application 250 kHz is used so Equation 25 yields 33 kHz and Equation 26 gives 52 kHz. Use the lower value of Equation 25 or Equation 26 for an initial crossover frequency. Next, the compensation components are calculated. A resistor-in-series with a capacitor is used to create a compensating zero. A capacitor in parallel to these two components forms the compensating pole.
To determine the compensation resistor, R6, use Equation 27. Assume the power stage transconductance, gmps, is 16 A/V. The output voltage, Vo, reference voltage, VREF, and amplifier transconductance, gmea, are 1.5 V, 0.6 V and 260 μA/V, respectively. R6 is calculated to be 19 kΩ and the closest standard value 19.1 kΩ. Use Equation 28 to set the compensation zero to the modulator pole frequency. Equation 28 yields 3020 pF for compensating capacitor C6 and the closest standard value is 3300 pF.
A compensation pole is implemented using an additional capacitor C7 in parallel with the series combination of R6 and C6. This capacitor is recommended to help filter any noise that may couple to the COMP voltage signal. Use the larger value of Equation 29 and Equation 30 to calculate the C7, to set the compensation pole. C7 is calculated to 21 pF or 8 pF and the closest standard value is 22 pF.
Type III compensation is used by adding the feed forward capacitor (C17) in parallel with the upper feedback resistor. This increases the crossover and adds phase boost above what is normally possible from Type II compensation. It places an additional zero/pole pair. This zero and pole pair is not independent. Once the zero location is chosen, the pole is fixed as well. The zero is placed at the intended crossover frequency by calculating the value of C17 with Equation 31. The calculated value is 216 pF and the closest standard value is 220 pF.
The initial compensation based on these calculations is R6 = 19.1 kΩ, C6 = 3300 pF, C7 = 22 pF and C17 = 220 pF. These values yield a stable design but after testing the real circuit these values were changed to optimize performance. The final values used in the schematic are R6 = 20.5 kΩ, C6 = 1800 pF, C7 = 180 pF and C17 = 180 pF.
Depending on the trace impedance between the LDOIN bulk power supply to the device, a transient increase of source current is supplied mostly by the charge from the LDOIN input capacitor. Use a 10-µF (or greater) and X5R grade (or better) ceramic capacitor to supply this transient charge.
Add a ceramic capacitor, with a value 0.22 µF and X5R grade (or better), placed close to the VTTREF terminal for stable operation.
For stable operation, two 10-µF (or greater) and X5R (or better) grade ceramic capacitor(s) need to be attached close to the VTT terminal. This capacitor is recommended to minimize any additional equivalent series resistance (ESR) and/or equivalent series inductance (ESL) of ground trace between the PGND terminal and the VTT capacitor(s).
The TPS54116-Q1 is designed to be powered by a well regulated dc voltage between 2.95 and 6 V. The TPS54116-Q1 is a buck converter so the input supply voltage must be greater than the desired output voltage to regulate the output voltage to the desired value. If the input supply voltage is not high enough the output voltage will begin to drop. Input supply current must be appropriate for the desired output current.
Layout is a critical portion of good power supply design. There are several signal paths that conduct fast changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supplies performance. Guidelines are as follows. See Figure 64 for a PCB layout example.
The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate PCB layouts, however this layout has been shown to produce good results and is meant as a guideline.
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
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