8.2.2.11 Power Dissipation Estimate
Use Equation 43 through Equation 52 to help estimate the device power dissipation under continuous conduction mode (CCM) operation. The power dissipation of the device (PTOT) includes the following:
- Conduction loss (PCOND)
- Dead time loss (PD)
- Switching loss (PSW)
- Gate drive loss (PGD)
- Supply current loss (PQ)
Equation 43. PCOND= (IOUT)2 × RDS(on)
Equation 44. PD = ƒSW × IOUT × 0.7 × 60 × (10)–9
Equation 45. PD = ƒSW × IOUT × 0.7 × 60 × (10)–9
Equation 46. PSW = 2 × (VIN)2 × ƒSW × IOUT × 0.25 × (10)–9
Equation 47. PSW = 2 × (VIN)2 × ƒSW × IOUT × 0.25 × (10)–9
Equation 48. PGD = 2 × VIN × 3 × (10)–9 × ƒSW
Equation 49. P
Q = 350 × (10)
–6 × V
IN
where
- IOUT is the output current (A)
- RDS(on) is the on-resistance of the high-side MOSFET (Ω)
- VOUT is the output voltage (V)
- VIN is the input voltage (V)
- ƒSW is the switching frequency (Hz)
Equation 50. PTOT = PCOND + PD + PSW + PGD + PQ
For a given ambient temperature,
Equation 51. TJ = TA + RTH × PTOT
For maximum junction temperature (TJ(max) = 150°C),
Equation 52. T
A(max) = T
J(max) – R
TH × P
TOT
where
- PTOT is the total device power dissipation (W)
- TA is the ambient temperature (°C)
- TJ is the junction temperature (°C)
- RTH is the thermal resistance of the package (°C/W)
- TJ(max) is maximum junction temperature (°C)
- TA(max) is maximum ambient temperature (°C)
Additional power can be lost in the regulator circuit due to the inductor ac and dc losses and trace resistance that impact the overall regulator efficiency. Figure 36 and Figure 37 show power dissipation for the EVM.
Figure 36. Power Dissipation versus Junction Temperature
TJ(max) = 150°C |
No air flow |
Figure 37. Power Dissipation versus Ambient Temperature