9 Revision History
Changes from Revision D (April 2015) to Revision E (January 2024)
- Updated the numbering format for tables, figures, and
cross-references throughout the documentGo
- Updated the data sheet title to include "Automotive". Added
WEBENCH® links throughout the data sheet. Added "integrated circuit" when the
PowerPAD package is mentioned. Changed MOSFET resistance from 110 mΩ to100 mΩ.
Changed I
Q
from 18 μA to 15 μA.Go
- Updated notes for Package Information table. Updated precision to
two significant digits.Go
- Changed pin configuration figure title to "DDA Package 8-Pin SOIC
With Thermal Pad Top View" and moved the title to the correct position. Changed
"PowerPAD" to "DAP".Go
- Updated Absolute Maximum Ratings table to new format which does not include
specific parameter names and does include min and max columns. TJ called out in
header. Pin names are used rather than signal names. BOOT and PH voltages now marked as
output voltage. Updated footnotes and removed Note 2.Go
- Changed BOOT to PH Absolute Maximum from 10 V to 6 V.Go
- Deleted Absolute Maximum BOOT to GND maximum voltageGo
- Deleted MM ESDGo
- Changed CDM ESD from ±1500 V to ±750 VGo
- Changed recommended operating "VI" to "input voltage".Go
- Updated thermal information footnotes to match current TI standards which include JEDEC standard information. Added EVM RθJA information.Go
- Changed RθJA from 41.2 to 42.3, RθJC(top) from 44.4 to 46, RθJB from 22.1 to 15, ψJB from 21.9 to 15.3, and RθJC(bot) from 3 to 6.Go
- Added condition for typical specifications EC table header, added parameter
names, and used pin names in parameter descriptions. Added table note.Go
- Changed test condition for VFB from “IO = 0 A to 3 A” to “TJ = –40°C to 125°C”, Changed rDS(ON) to RDSON(HS) and test condition to for RDSON(HS) from “VIN = 5.5 V” to “VIN = 5.5 V, VBOOT-SW = 4.0 V”.Go
- Changed the name of IQ to ISD(VIN) if ENA is low and IQ(VIN) if the chip is active.Go
- Added test condition for DMAX, “fSW = 500 kHz” and for second RDSON(HS) spec “VIN = 12 V, VBOOT-SW = 4.5 V”.Go
- Changed IQ(VIN) typical from 3 mA to 2 mA, ISD(VIN) typical from 18 µA to 15 µA, VINUVLO(H) from 330 mV to 0.35 V, and VEN(H) from 450 mV to 325 mV.Go
- Changed RDS(ON) with VIN = 5 V typical from 150 mΩ to 125 mΩ and with VIN = 12 V from 110 mΩ to 100 mΩ.Go
- Changed "110-mΩ high-side MOSFET"
to "100-mΩ high-side MOSFET" and 18 µA to 15 µA in
Overview
Go
- Change "PowerPAD" to "DAP" in functional block
diagram.Go
- Changed shutdown current from 18 μA to 15 μA in Enable (ENA) and
Internal Slow Start sectionGo
- Changed UVLO hysteresis from 330 mV to 350 mV in UVLO
description.Go
- Changed "PwPd" to "DAP" on the TPS5430DDA package drawing in Figure 7-1 and "exposed thermal pad" to "DAP" in circuit description. Go
- Added "Custom Design With WEBENCH® Tools" sectionGo
- Changed "PwPd" to "DAP" on the TPS5430DDA package drawing in Figure 7-9 and Figure 7-10.Go
- Changed "PwPd" to "DAP" on the TPS5430DDA package drawing in Figure 7-11.Go
- Deleted land pattern from Layout Example
sectionGo
- Added "Custom Design With WEBENCH® Tools" sectionGo
Changes from Revision C (July 2009) to Revision D (April 2015)
- Deleted Swift™ from the titleGo
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go