SLVS751E November   2007  – January 2024 TPS5430-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information (DDA Package)
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Oscillator Frequency
      2. 6.3.2  Voltage Reference
      3. 6.3.3  Enable (ENA) and Internal Slow Start
      4. 6.3.4  Undervoltage Lockout (UVLO)
      5. 6.3.5  Boost Capacitor (BOOT)
      6. 6.3.6  Output Feedback (VSENSE) and Internal Compensation
      7. 6.3.7  Voltage Feed Forward
      8. 6.3.8  Pulse-Width Modulation (PWM) Control
      9. 6.3.9  Overcurrent Limiting
      10. 6.3.10 Overvoltage Protection (OVP)
      11. 6.3.11 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Operation near Minimum Input Voltage
      2. 6.4.2 Operation with ENA control
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Applications
      1. 7.2.1 Application Circuit, 12 V to 5 V
        1. 7.2.1.1 Design Requirements
        2. 7.2.1.2 Detailed Design Procedure
          1. 7.2.1.2.1 Custom Design With WEBENCH® Tools
          2. 7.2.1.2.2 Switching Frequency
          3. 7.2.1.2.3 Input Capacitors
          4. 7.2.1.2.4 Output Filter Components
            1. 7.2.1.2.4.1 Inductor Selection
            2. 7.2.1.2.4.2 Capacitor Selection
          5. 7.2.1.2.5 Output Voltage Setpoint
          6. 7.2.1.2.6 Boot Capacitor
          7. 7.2.1.2.7 Catch Diode
          8. 7.2.1.2.8 Advanced Information
            1. 7.2.1.2.8.1 Output Voltage Limitations
            2. 7.2.1.2.8.2 Internal Compensation Network
            3. 7.2.1.2.8.3 Thermal Calculations
        3. 7.2.1.3 Application Curves
      2. 7.2.2 9-V to 21-V Input to 5-V Output Application Circuit
      3. 7.2.3 Circuit Using Ceramic Output Filter Capacitors
        1. 7.2.3.1 Output Filter Component Selection
        2. 7.2.3.2 External Compensation Network
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Development Support
        1. 8.1.1.1 Custom Design With WEBENCH® Tools
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

5.5 Electrical Characteristics

TJ = –40°C to +125°C, VIN = 5.5 V to 36 V. Typical values are at TJ = 25°C and VIN = 12 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SUPPLY VOLTAGE (VIN PIN)
IQ(VIN) VIN quiescent current        Non-switching, VSENSE = 2V, PH pin open 2 4.4 mA
ISD(VIN) VIN shutdown supply current        Shutdown, ENA = 0 V 15 50 µA
UVLO
VINUVLO(R) VIN UVLO rising threshold         VVIN rising 5.3 5.5 V
VINUVLO(H) VIN UVLO hysteresis            0.35 V
VOLTAGE REFERENCE
VFB FB voltage TJ = 25°C  1.202 1.221 1.239 V
VFB FB voltage TJ = –40°C to 125°C 1.196 1.221 1.245 V
OSCILLATOR
fSW Switching frequency        400 500 600 kHz
tON(min) Minimum ON pulse width    .   150 200 ns
DMAX Maximum Duty Cycle fSW = 500 kHz 87% 89%
ENABLE (ENA PIN)
VEN(R) ENA voltage rising threshold 1.3 V
VEN(F) ENA voltage falling threshold 0.5 V
VEN(H) ENA voltage hysteresis 325 mV
tSS Internal slow-start time (0~100%) 5.4 8 10 ms
OVERCURRENT PROTECTION
IHS(OC) High-side peak current limit 4.0 5.0 7.0 A
Hiccup time before re-start 13 16 21 ms
OUTPUT MOSFET
RDSON(HS) High-side MOSFET on-resistance VIN = 12 V, VBOOT-SW = 4.5 V 100 230 mΩ
RDSON(HS) High-side MOSFET on-resistance VIN = 5.5 V, VBOOT-SW = 4.0 V 125 mΩ
THERMAL SHUTDOWN
TJ(SD) Thermal shutdown threshold (1) Temperature rising 135 162 °C
TJ(HYS) Thermal shutdown hysteresis (1) 14 °C
(1) Parameter specified by design, statistical analysis and production testing of correlated parameters. Not production tested.