SLUS774C AUGUST 2007 – December 2014 TPS54383 , TPS54386
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
The following parts have characteristics similar to the TPS54383/6 and may be of interest.
TI LITERATURE NUMBER | DEVICE | DESCRIPTION |
---|---|---|
SLUS642 | TPS40222 | 5-V Input, 1.6-A Non-Synchronous Buck Converter |
SLUS749 | TPS54283 / TPS54286 | 2-A Dual Non-Synchronous Converter with Integrated High-Side MOSFET |
CDJ | Average junction capacitance of the rectifier diode from 0V to VIN(max) |
COSS | Average output capacitance of the switching MOSFET from 0V to VIN(max) |
COUT | Output Capacitor |
D(max) | Maximum steady state operating duty cycle |
D(min) | Minimum steady state operating duty cycle |
ESR(max) | Maximum allowable output capacitor ESR |
fSW | Switching frequency |
IBP | Output Current of BP regulator due to external loads |
IDD | Switching quiescent current with no load on BP |
ID(avg) | Average diode conduction current |
ID(peak) | Peak diode conduction current |
IIN(avg) | Average input current |
IIN(rms) | Root mean squared (RMS) input current |
IL(avg) | Average inductor current |
IL(rms) | Root mean squared (RMS) inductor current |
IL(peak) | Peak current in inductor |
ILRIP(max) | Maximum allowable inductor ripple current |
L(min) | Minimum inductor value to maintain desired ripple current |
IOUT(max) | Maximum designed output current |
IRMS(cin) | Root mean squared (RMS) current through the input capacitor |
IRIPPLE | Inductor peak to peak ripple current |
IQSW(rms) | Root mean squared current through the switching MOSFET |
PCON | Power loss due to conduction through switching MOSFET |
PD(max) | Maximum power dissipation in diode |
RDS(on) | Drain to source resistance of the switching MOSFET when “ON” |
PSW | Power loss due to switching |
PREG | Power loss due to the internal regulator |
VBP | Output Voltage of BP regulator |
V(BR)R(min) | Minimum reverse breakdown voltage rating for rectifier diode |
VFB | Regulated feedback voltage |
VFD | Forward voltage drop across rectifier diode |
VIN | Power stage input voltage |
VOUT | Regulated output voltage |
VRIPPLE(cap) | Peak-to-Peak ripple voltage due to ideal capacitor (ESR = 0) |
VRIPPLE(tot) | Maximum allowable peak-to-peak output ripple voltage |
These references, design tools and links to additional references, including design software, may be found at http:www.power.ti.com
The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.
PARTS | PRODUCT FOLDER | SAMPLE & BUY | TECHNICAL DOCUMENTS | TOOLS & SOFTWARE | SUPPORT & COMMUNITY |
---|---|---|---|---|---|
TPS54383 | Click here | Click here | Click here | Click here | Click here |
TPS54386 | Click here | Click here | Click here | Click here | Click here |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.