SLVSHH9 February   2024 TPS54KC23

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Internal VCC LDO and Using External Bias On the VCC Pin
      2. 6.3.2  Enable
      3. 6.3.3  Adjustable Soft Start
      4. 6.3.4  Power Good
      5. 6.3.5  Output Voltage Setting
      6. 6.3.6  Remote Sense
      7. 6.3.7  D-CAP4 Control
      8. 6.3.8  Multifunction Select (MSEL) Pin
      9. 6.3.9  Low-side MOSFET Zero-Crossing
      10. 6.3.10 Current Sense and Positive Overcurrent Protection
      11. 6.3.11 Low-side MOSFET Negative Current Limit
      12. 6.3.12 Overvoltage and Undervoltage Protection
      13. 6.3.13 Output Voltage Discharge
      14. 6.3.14 UVLO Protection
      15. 6.3.15 Thermal Shutdown
    4. 6.4 Device Functional Modes
      1. 6.4.1 Auto-Skip Eco-mode Light Load Operation
      2. 6.4.2 Forced Continuous-Conduction Mode
      3. 6.4.3 Powering the Device From a Single Bus
      4. 6.4.4 Powering the Device From a Split-rail Configuration
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Output Voltage Setting Point
        2. 7.2.2.2  Choose the Switching Frequency and the Operation Mode
        3. 7.2.2.3  Choose the Inductor
        4. 7.2.2.4  Set the Current Limit (ILIM)
        5. 7.2.2.5  Choose the Output Capacitor
        6. 7.2.2.6  RAMP Selection
        7. 7.2.2.7  Choose the Input Capacitors (CIN)
        8. 7.2.2.8  Soft-Start Capacitor (SS Pin)
        9. 7.2.2.9  EN Pin Resistor Divider
        10. 7.2.2.10 VCC Bypass Capacitor
        11. 7.2.2.11 BOOT Capacitor
        12. 7.2.2.12 RC Snubber
        13. 7.2.2.13 PG Pullup Resistor
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. Device and Documentation Support
    1. 8.1 Documentation Support
      1. 8.1.1 Related Documentation
    2. 8.2 Receiving Notification of Documentation Updates
    3. 8.3 Support Resources
    4. 8.4 Trademarks
    5. 8.5 Electrostatic Discharge Caution
    6. 8.6 Glossary
  10. Revision History
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Remote Sense

The device integrates a remote sense amplifier across the FB and GOSNS pins. The remote sense function compensates for voltage drop on the PCB traces helping to maintain VOUT accuracy under steady state operation and load transient events. The VOUT connection of the remote sensing signal must be connected to the feedback resistor divider with the lower feedback resistor, RFB_B, terminated at the GOSNS pin.

The FB voltage divider resistors must be kept near the device to minimize the trace length connected to the FB pin. The connections from the FB voltage divider resistors and the GOSNS pin to the remote location must be a pair of PCB traces with Kelvin sensing across a bypass capacitor of 0.1μF or higher. To maintain stable output voltage and minimize the ripple, the pair of remote sensing lines must stay away from any noise sources such as inductor and SW nodes, or high frequency clock lines. TI recommends to shield the pair of remote sensing lines with ground planes above and below.

Single-ended VOUT sensing can also be used for local sensing. For this configuration connect the higher FB resistor RFB_T to a high-frequency local bypass capacitor of 0.1μF or higher, and short GOSNS to AGND.

The recommended GOSNS operating range (relative to the AGND pin) is –100mV to +100mV.