SLVS939B June 2009 – December 2014 TPS55332-Q1
PRODUCTION DATA.
The recommended guidelines for PCB layout of the TPS55332 device are described in the following sections.
Use a low EMI inductor with a ferrite type shielded core. Other types of inductors may be used, however they must have low EMI characteristics and be located away from the low power traces and components in the circuit.
Input ceramic filter capacitors should be located in close proximity of the VIN terminal. Surface mount capacitors are recommended to minimize lead length and reduce noise coupling. Also low ESR and max input ripple current requirements must be satisfied.
Route the feedback trace such that there is minimum interaction with any noise sources associated with the switching components. Recommended practice is to ensure the inductor is placed away from the feedback trace to prevent EMI noise sourcing.
All power (high current) traces should be as thick and short as possible. The inductor and output capacitors should be as close to each other as possible. This reduces EMI radiated by the power traces due to high switching currents.
In a two sided PCB it is recommended to have ground planes on both sides of the PCB to help reduce noise and ground loop errors. The ground connection for the input and output capacitors and IC ground should be connected to this ground plane.
In a multi-layer PCB, the ground plane is used to separate the power plane (high switching currents and components are placed) from the signal plane (where the feedback trace and components are placed) for improved performance.
Also arrange the components such that the switching current loops curl in the same direction. Place the high current components such that during conduction the current path is in the same direction. This prevents magnetic field reversal caused by the traces between the two half cycles, helping to reduce radiated EMI.
The power ground terminal for the power FET must also be terminated to the ground plane in the shortest trace possible.
The power dissipation losses are applicable for continuous conduction mode operation (CCM).
Where:
Vo = Output voltage
Vi = Input voltage
Io = Output current
tr = FET switching rise time (tr max = 40 ns)
tf = FET switching fall time
Vdrive = FET gate drive voltage (typically Vdrive = 6 V and Vdrive max = 8 V)
ƒsw = Switching frequency
D = Duty cycle
For given operating ambient temperature, TAmb:
For a given max junction temperature of TJ-Max = 150°C:
Where:
PTotal = Total power dissipation (watts)
TAmb = Ambient temperature in °C
TJ = Junction temperature in °C
TAmb-Max = Maximum ambient temperature in °C
TJ-Max = Maximum junction temperature in °C
Rth = Thermal resistance of package in (°C/W)
Other factors NOT included in the information above which affect the overall efficiency and power losses are inductor ac and dc losses, and trace resistance and losses associated with the copper trace routing connection.