SLVSCM3B january 2015 – august 2023 TPS62065-Q1 , TPS62067-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
SUPPLY | ||||||
VIN | Input voltage range | 2.9 | 6 | V | ||
IQ | Operating quiescent current | IOUT = 0 mA, device operating in PFM mode and not device not switching | 18 | μA | ||
ISD | Shutdown current | EN = GND, current into AVIN and PVIN combined | 0.1 | 5 | μA | |
VUVLO | Undervoltage lockout threshold | Falling | 1.73 | 1.78 | 1.83 | V |
Rising | 1.9 | 1.95 | 1.99 | |||
ENABLE, MODE | ||||||
VIH | High level input voltage | 2.9 V ≤ VIN ≤ 6 V | 1 | 6 | V | |
VIL | Low level input voltage | 2.9 V ≤ VIN ≤ 6 V | 0 | 0.4 | V | |
IIN | Input bias current | EN, Mode tied to GND or AVIN | 0.01 | 1 | μA | |
POWER GOOD OPEN DRAIN OUTPUT | ||||||
VTHPG | Power good threshold voltage | Rising feedback voltage | 93% | 95% | 98% | |
Falling feedback voltage | 87% | 90% | 92% | |||
VOL | Output low voltage | IOUT = –1 mA; must be limited by external pullup resistor (2) | 0.3 | V | ||
ILKG | Leakage current into PG pin | V(PG) = 3.6 V | 100 | nA | ||
tPGDL | Internal power good delay time | 5 | µs | |||
POWER SWITCH | ||||||
RDS(on) | High-side MOSFET on-resistance | VIN = 3.6 V (2) | 120 | 180 | mΩ | |
VIN = 5 V(2) | 95 | 150 | ||||
RDS(on) | Low-side MOSFET on-resistance | VIN = 3.6 V(2) | 90 | 130 | mΩ | |
VIN = 5 V(2) | 75 | 100 | ||||
ILIMF | Forward current limit MOSFET high-side and low-side | 2.9 V ≤ VIN ≤ 6 V | 2300 | 2750 | 3300 | mA |
TSD | Thermal shutdown | Increasing junction temperature | 150 | °C | ||
Thermal shutdown hysteresis | Decreasing junction temperature | 10 | ||||
OSCILLATOR | ||||||
fSW | Oscillator frequency | 2.9 V ≤ VIN ≤ 6 V | 2.6 | 3 | 3.4 | MHz |
OUTPUT | ||||||
Vref | Reference voltage | 600 | mV | |||
VFB(PWM) | Feedback voltage PWM Mode | PWM operation, MODE = VIN , 2.9 V ≤ VIN ≤ 6 V, 0-mA load | –1.5% | 0% | 1.5% | |
VFB(PFM) | Feedback voltage PFM mode, Voltage Positioning | device in PFM mode, voltage positioning active(1) | 1% | |||
VFB | Load regulation | –0.5 | %/A | |||
Line regulation | 0 | %/V | ||||
R(Discharge) | Internal discharge resistor | Activated with EN = GND, 2.9 V ≤ VIN ≤ 6 V, 0.8 ≤ VOUT ≤ 3.6 V | 75 | 200 | 1450 | Ω |
tSTART | Start-up time | Time from active EN to reach 95% of VOUT | 500 | μs |