SUPPLY CURRENT |
VI |
Input voltage range |
|
2.5 |
|
5.5 |
V |
II(standby) |
Quiescent current |
EN = H; measured into VIN pin |
|
7 |
|
mA |
|
Shutdown current |
EN = L; measured into VIN pin |
|
0.1 |
2 |
µA |
UNDERVOLTAGE LOCKOUT |
|
Input threshold voltage (VIN) (undervoltage lockout) |
VI rising |
|
2 |
2.3 |
V |
|
|
VI falling |
|
1.8 |
2.1 |
V |
THERMAL SHUTDOWN |
|
Thermal shutdown junction temperature |
|
|
140 |
|
°C |
|
Thermal shutdown hysteresis |
|
|
5 |
|
°C |
ENABLE |
|
High-level input voltage (EN) |
VI = 2.5 V to 5.5 V |
1.2 |
|
|
V |
|
Low-level input voltage (EN) |
VI = 2.5 V to 5.5 V |
|
|
0.4 |
V |
R(EN) |
Pull-down resistor (EN) |
|
200 |
500 |
900 |
kΩ |
OUTPUT |
VO(POS) |
Positive output voltage range |
|
3 |
|
6 |
V |
|
Threshold voltage (OUTP) (overvoltage protection) |
IO(POS) = 10 mA |
6.1 |
7 |
|
V |
VO(NEG) |
Negative output voltage range |
|
–7 |
|
–2.5 |
V |
|
Threshold voltage (OUTN) (overvoltage protection) |
IO(NEG) = –10 mA |
|
–7.6 |
-7.1 |
V |
Vref1 |
Positive output reference voltage |
|
–1% |
1.24 |
+1% |
V |
Vref2 |
Negative output reference voltage |
|
–10 |
0 |
10 |
mV |
|
MOSFET on-state resistance (Q1) |
ID(Q1) = 100 mA |
|
250 |
|
mΩ |
|
MOSFET on-state resistance (Q2) |
ID(Q2) = 100 mA |
|
200 |
|
mΩ |
|
MOSFET on-state resistance (Q3) |
ID(Q3) = 100 mA |
|
500 |
|
mΩ |
|
MOSFET on-state resistance (Q4) |
ID(Q4) = 100 mA |
|
300 |
|
mΩ |
ID(Q2)max |
Q2 switch current limit |
VI = 3.7 V |
0.9 |
1.2 |
1.6 |
A |
VI = 2.5 V |
1 |
1.5 |
1.9 |