SLVS576B SEPTEMBER   2005  – January 2016 TPS65150

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Converter
        1. 7.3.1.1 Setting the Boost Converter Output Voltage
        2. 7.3.1.2 Boost Converter Rectifier Diode
        3. 7.3.1.3 Choosing the Boost Converter Output Capacitance
        4. 7.3.1.4 Compensation
        5. 7.3.1.5 Soft Start
        6. 7.3.1.6 Gate Drive Signal
      2. 7.3.2 Negative Charge Pump
        1. 7.3.2.1 Negative Charge Pump Output Voltage
        2. 7.3.2.2 Negative Charge Pump Flying Capacitance
        3. 7.3.2.3 Negative Charge Pump Output Capacitance
        4. 7.3.2.4 Negative Charge Pump Diodes
      3. 7.3.3 Positive Charge Pump
        1. 7.3.3.1 Positive Charge Pump Output Voltage
        2. 7.3.3.2 Positive Charge Pump Flying Capacitance
        3. 7.3.3.3 Positive Charge Pump Output Capacitance
        4. 7.3.3.4 Positive Charge Pump Diodes
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Power-On Sequencing, DLY1, DLY2
      6. 7.3.6 Gate Voltage Shaping
      7. 7.3.7 VCOM Buffer
      8. 7.3.8 Protection
        1. 7.3.8.1 Boost Converter Overvoltage Protection
        2. 7.3.8.2 Adjustable Fault Delay
        3. 7.3.8.3 Thermal Shutdown
        4. 7.3.8.4 Undervoltage Lockout
    4. 7.4 Device Functional Modes
      1. 7.4.1 VI > VIT+
      2. 7.4.2 VI < VIT-
      3. 7.4.3 Fault Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Boost Converter Design Procedure
          1. 8.2.2.1.1 Inductor Selection
        2. 8.2.2.2  Rectifier Diode Selection
        3. 8.2.2.3  Setting the Output Voltage
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Compensation
        7. 8.2.2.7  Negative Charge Pump
          1. 8.2.2.7.1 Choosing the Output Capacitance
          2. 8.2.2.7.2 Choosing the Flying Capacitance
          3. 8.2.2.7.3 Choosing the Feedback Resistors
          4. 8.2.2.7.4 Choosing the Diodes
        8. 8.2.2.8  Positive Charge Pump
          1. 8.2.2.8.1 Choosing the Flying Capacitance
          2. 8.2.2.8.2 Choosing the Output Capacitance
          3. 8.2.2.8.3 Choosing the Feedback Resistors
          4. 8.2.2.8.4 Choosing the Diodes
        9. 8.2.2.9  Gate Voltage Shaping
        10. 8.2.2.10 Power-On Sequencing
        11. 8.2.2.11 Fault Delay
        12. 8.2.2.12 Undervoltage Lockout Function
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
  • PWP|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • 1.8-V to 6-V Input Voltage Range
  • Integrated VCOM Buffer
  • High-voltage Switch to Isolate V(VGH)
  • Gate-Voltage Shaping of V(VGH)
  • 2-A Internal MOSFET switch
  • Main Output V(VS) up to 15 V With <1% Output Voltage Accuracy
  • Virtual-Synchronous Converter Technology
  • Regulated Negative Charge Pump Driver V(VGL)
  • Regulated Positive Charge Pump Driver V(CPI)
  • Adjustable Power-On Sequencing
  • Adjustable Fault Detection Timing
  • Gate Drive Signal for External Isolation MOSFET
  • Out-of-Regulation Protection
  • Overvoltage Protection
  • Thermal Shutdown
  • Available in HTSSOP-24 Package
  • Available in VQFN-24 Package

2 Applications

  • TFT LCD Displays for Notebooks
  • TFT LCD Displays for Monitors
  • Car Navigation Displays

3 Description

The TPS65150 device offers a very compact and small power supply solution that provides all three voltages required by thin film transistor (TFT) LCD displays. With an input voltage range of 1.8 V to 6 V the device is ideal for notebooks powered by a 2.5-V or 3.3-V input rail or monitor applications with a 5-V input voltage rail. Additionally the TPS65150 device provides an integrated high current buffer to provide the VCOM voltage for the TFT backplane.

Two regulated adjustable charge pump driver provide the positive V(VGH) and negative V(VGL) bias voltages for the TFT. The device incorporates adjustable power-on sequencing for V(VGL) as well as for V(VGH). This avoids any additional external components to implement application specific sequencing. The device has an integrated high-voltage switch to isolate V(VGH).

The same internal circuit can also be used to provide a gate shaping signal of V(VGH) for the LCD panel controlled by the signal applied to the CTRL input. For highest safety, the TPS65150 device has an integrated adjustable shutdown latch feature, which allows application-specific flexibility. The device monitors the outputs (V(VS), V(VGL), V(VGH)); and, as soon as one of the outputs falls below its power good threshold, the device enters shutdown latch, after its adjustable delay time has passed by.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
TPS65150 HTSSOP (24) 7.80 mm × 4.40 mm
VQFN (24) 4.00 mm × 4.00 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Block Diagram

TPS65150 FBD_06_SLVS576.gif