SLVS576B SEPTEMBER   2005  – January 2016 TPS65150

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Boost Converter
        1. 7.3.1.1 Setting the Boost Converter Output Voltage
        2. 7.3.1.2 Boost Converter Rectifier Diode
        3. 7.3.1.3 Choosing the Boost Converter Output Capacitance
        4. 7.3.1.4 Compensation
        5. 7.3.1.5 Soft Start
        6. 7.3.1.6 Gate Drive Signal
      2. 7.3.2 Negative Charge Pump
        1. 7.3.2.1 Negative Charge Pump Output Voltage
        2. 7.3.2.2 Negative Charge Pump Flying Capacitance
        3. 7.3.2.3 Negative Charge Pump Output Capacitance
        4. 7.3.2.4 Negative Charge Pump Diodes
      3. 7.3.3 Positive Charge Pump
        1. 7.3.3.1 Positive Charge Pump Output Voltage
        2. 7.3.3.2 Positive Charge Pump Flying Capacitance
        3. 7.3.3.3 Positive Charge Pump Output Capacitance
        4. 7.3.3.4 Positive Charge Pump Diodes
      4. 7.3.4 Undervoltage Lockout
      5. 7.3.5 Power-On Sequencing, DLY1, DLY2
      6. 7.3.6 Gate Voltage Shaping
      7. 7.3.7 VCOM Buffer
      8. 7.3.8 Protection
        1. 7.3.8.1 Boost Converter Overvoltage Protection
        2. 7.3.8.2 Adjustable Fault Delay
        3. 7.3.8.3 Thermal Shutdown
        4. 7.3.8.4 Undervoltage Lockout
    4. 7.4 Device Functional Modes
      1. 7.4.1 VI > VIT+
      2. 7.4.2 VI < VIT-
      3. 7.4.3 Fault Mode
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1  Boost Converter Design Procedure
          1. 8.2.2.1.1 Inductor Selection
        2. 8.2.2.2  Rectifier Diode Selection
        3. 8.2.2.3  Setting the Output Voltage
        4. 8.2.2.4  Output Capacitor Selection
        5. 8.2.2.5  Input Capacitor Selection
        6. 8.2.2.6  Compensation
        7. 8.2.2.7  Negative Charge Pump
          1. 8.2.2.7.1 Choosing the Output Capacitance
          2. 8.2.2.7.2 Choosing the Flying Capacitance
          3. 8.2.2.7.3 Choosing the Feedback Resistors
          4. 8.2.2.7.4 Choosing the Diodes
        8. 8.2.2.8  Positive Charge Pump
          1. 8.2.2.8.1 Choosing the Flying Capacitance
          2. 8.2.2.8.2 Choosing the Output Capacitance
          3. 8.2.2.8.3 Choosing the Feedback Resistors
          4. 8.2.2.8.4 Choosing the Diodes
        9. 8.2.2.9  Gate Voltage Shaping
        10. 8.2.2.10 Power-On Sequencing
        11. 8.2.2.11 Fault Delay
        12. 8.2.2.12 Undervoltage Lockout Function
      3. 8.2.3 Application Curves
    3. 8.3 System Examples
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Community Resources
    3. 11.3 Trademarks
    4. 11.4 Electrostatic Discharge Caution
    5. 11.5 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGE|24
  • PWP|24
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Pin Configuration and Functions

RGE Package
24-Pin VQFN
Top View
TPS65150 PinOut_02_SLVS576.gif
PWP Package
24-Pin HTSSOP
Top View
TPS65150 PinOut_01_SLVS576.gif

Pin Functions

PIN I/O DESCRIPTION
NAME VQFN HTSSOP
ADJ 17 14 I/O Gate voltage shaping circuit. Connecting a capacitor to this pin sets the fall time of the positive gate voltage V(VGH).
COMP 1 22 O This is the compensation pin for the main boost converter. A small capacitor and if required a series resistor is connected to this pin.
CPI 19 16 I Input of the VGH isolation switch and gate voltage shaping circuit.
CTRL 16 13 I Control signal for the gate voltage shaping signal. Apply the control signal for the gate voltage control. Usually the timing controller of the LCD panel generates this signal. If this function is not required, this pin must be connected to VI. By doing this, the internal switch between CPI and VGH provides isolation for the positive charge pump output V(VGH). DLY2 sets the delay time for V(VGH) to come up.
DLY1 5 2 I/O Power-on sequencing adjust. Connecting a capacitor from this pin to ground allows to set the delay time between the boost converter output V(VS) and the negative charge pump V(VGL) during start-up.
DLY2 6 3 I/O Power-on sequencing adjust. Connecting a capacitor from this pin to ground allows to set the delay time between the negative charge pump V(VGL) and the positive charge pump during start-up. Note that Q5 in the gate voltage shaping block only turns on when the positive charge pump is within regulation. (This provides input-output isolation of V(VGH)).
DRVN 21 18 I/O Negative charge pump driver.
DRVP 20 17 I/O Positive charge pump driver.
FB 4 1 I Boost converter feedback sense input.
FBN 24 21 I Negative charge pump feedback sense input.
FBP 15 12 I Positive charge pump feedback sense input.
FDLY 3 24 I/O Fault delay. Connecting a capacitor from this pin to VI sets the delay time from the point when one or more of the of the outputs V(VS), V(VGH), V(VGL) drops below its power good threshold until the device shuts down. To restart the device, the input voltage must be cycled to ground. This feature can be disabled by connecting the FDLY pin to VI.
GD 2 23 I Active-low, open-drain output. This output is latched low when the boost converter output is in regulation. This signal can be used to drive an external MOSFET to provide isolation for V(VS).
GND 22 19 Analog ground.
IN 14 11 I Input of the VCOM buffer. If this pin is connected to ground, the VCOM buffer is disabled.
PGND 10, 11 7, 8 Power ground.
REF 23 20 O Internal reference output, typically 1.213 V.
SUP 12 9 I/O Supply pin of the positive, negative charge pump and boost converter gate drive circuit. This pin should be connected to the output of the main boost converter.
SW 8, 9 5, 6 I Switch pin of the boost converter.
VCOM 13 10 O VCOM buffer output. Typically a 1-µF output capacitor is required on this pin.
VGH 18 15 O Positive output voltage to drive the TFT gates with an adjustable fall time. This pin is internally connected with a MOSFET switch to the positive charge pump input CPI.
VIN 7 4 I This is the input voltage pin of the device.
Thermal Pad The thermal pad must to be soldered to GND