4 Revision History
Changes from L Revision (January 2015) to M Revision
- Updated data sheet text to latest data sheet and translation standards Go
- Changed "Ultra-Low Noise" to "Low Noise" in document title Go
- Changed Low IQ from 46 μA to 45 μA in Features, Description, and Application Information sections.Go
- Changed "Standard" to "Ceramic" in Features listGo
- Changed 6-pin package from "SON" to "WSON" in Features list Go
- Deleted printers, WiFi®, WiMax Modules, cellular phones, smart phones and microprocessor power from Applications section Go
- Added post DC/DC ripple filtering, IP network cameras, macro base stations, and thermostats to Applications sectionGo
- Changed TA to TJ in Description section Go
- Changed 6-pin package from "SON" to "WSON" in Description section Go
- Changed package in Device Information table from VSON (6) to WSON (6)Go
- Changed 6-pin DRB package designator from "VSON" to "SON" in Pin Configurations and Functions section Go
- Changed 6-pin DRV package designator from "VSON" to "WSON" in Pin Configurations and Functions section Go
- Added "feedback resistor" parameter to Recommended Operating Conditions tableGo
- Changed DRV package designator from "VSON" to "WSON" in Thermal Information table Go
- Changed DRB package designator from "VSON" to "SON" in Thermal Information table Go
- Changed TPS735 Ground Pin Current (Disable) vs Temperature in Typical Characteristics sectionGo
- Changed TPS735 Dropout Voltage vs Output Current in Typical Characteristics sectionGo
- Updated Equation 1 Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 17Go
- Changed x-axis scale from "10 ms/div" to "10 µs/div" in Figure 18Go
- Changed VOUT starting value to 0 V in Figure 19Go
- Updated Equation 2 Go
- Updated Equation 3 Go
- Changed DRV package designator from "SON" to "WSON" in Measuring Points for TT and TBGo
- Deleted references to thermal information documents in Related Documentation section Go
Changes from K Revision (August, 2013) to L Revision
- Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information sections Go
- Added first bullet item in Features list Go
- Changed fourth bullet item in Features list to "fixed outputs of 1.2 V" Go
- Changed eighth bullet item in Features list Go
- Changed last bullet in Features list Go
- Changed last Applications list item Go
- Changed Pin Configuration and Functions section; updated table format and pin descriptions to meet new standards Go
- Changed CNR value notation from 0.01 µF to 10 nF throughout Electrical CharacteristicsGo
- Changed feedback voltage parameter values and measured test conditions Go
- Changed output current limit maximum specified value Go
- Changed power-supply rejection ratio typical specified values for 100 Hz, 10 kHz, and 100 kHz frequency test conditions Go
- Added note (1) to Figure 1Go
- Changed y-axis title for Figure 6Go
- Changed y-axis title for Figure 7Go
- Changed footnote for Figure 13Go
- Changed reference to noise-reduction capacitor (CNR) to feed-forward capacitor (CFF) in Transient ResponseGo
- Changed noise-reduction capacitor to feed-forward capacitor in Figure 16Go
- Changed references to "noise-reduction capacitor" (CNR) to "feed-forward capacitor" (CFF) and section title from "Feedback Capacitor Requirements" to "Feed-forward Capacitor Requirements" in Feed-Forward Capacitor Requirements sectionGo
- Changed CNR value notation from 0.01 µF to 10 nF in Output Noise sectionGo
Changes from J Revision (May, 2011) to K Revision
- Added last sentence to first paragraph of Startup and Noise Reduction Capacitor sectionGo
Changes from I Revision (April, 2011) to J Revision
- Replaced the Dissipation Ratings with Thermal InformationGo
- Revised conditions for Typical Characteristics to include statement about TPS73525 device availabilityGo
- Added Estimating Junction Temperature sectionGo
- Updated Power Dissipation sectionGo
Changes from H Revision (November, 2009) to I Revision
- Corrected typo in Electrical Characteristics table for VOUT specification, DRV package test conditions, VOUT ≤ 2.2VGo
Changes from G Revision (March 2009) to H Revision
- Revised bullet point in Features list to show very low dropout of 280 mVGo
- Changed dropout voltage typical specification from 250mV to 280mVGo