SBVS436B june   2022  – august 2023 TPS7A15

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Revision History
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Excellent Transient Response
      2. 7.3.2 Active Overshoot Pulldown Circuitry
      3. 7.3.3 Global Undervoltage Lockout (UVLO)
      4. 7.3.4 Enable Input
      5. 7.3.5 Internal Foldback Current Limit
      6. 7.3.6 Active Discharge
      7. 7.3.7 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Mode
      2. 7.4.2 Dropout Mode
      3. 7.4.3 Disabled Mode
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1  Recommended Capacitor Types
      2. 8.1.2  Input, Output, and Bias Capacitor Requirements
      3. 8.1.3  Dropout Voltage
      4. 8.1.4  Behavior During Transition From Dropout Into Regulation
      5. 8.1.5  Device Enable Sequencing Requirement
      6. 8.1.6  Load Transient Response
      7. 8.1.7  Undervoltage Lockout Circuit Operation
      8. 8.1.8  Power Dissipation (PD)
      9. 8.1.9  Estimating Junction Temperature
      10. 8.1.10 Recommended Area for Continuous Operation
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
      1. 9.1.1 Development Support
        1. 9.1.1.1 Evaluation Module
      2. 9.1.2 Device Nomenclature
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Mechanical, Packaging, and Orderable Information
    1. 10.1 Mechanical Data

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.7 Thermal Shutdown

The internal thermal shutdown protection circuit disables the output when the thermal junction temperature (TJ) of the pass transistor rises to the thermal shutdown temperature threshold, TSD(shutdown) (typical). The thermal shutdown circuit hysteresis ensures that the LDO resets (turns on) when the temperature falls to TSD(reset) (typical).

The thermal time constant of the semiconductor die is fairly short; thus, the device can cycle on and off when thermal shutdown is reached until power dissipation is reduced. Power dissipation during start up can be high from large VIN – VOUT voltage drops across the device or from high inrush currents charging large output capacitors. Under some conditions, the thermal shutdown protection disables the device before start up completes.

For reliable operation, limit the junction temperature to the maximum listed in the Recommended Operating Conditions table. Operation above this maximum temperature causes the device to exceed operational specifications. Although the internal protection circuitry of the device is designed to protect against thermal overload conditions, this circuitry is not intended to replace proper heat sinking. Continuously running the device into thermal shutdown or above the maximum recommended junction temperature reduces long-term reliability.