SLVSDQ0J september   2017  – august 2023 TPS7B82-Q1

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: Grade 1 Options
    6. 6.6 Electrical Characteristics: Grade 0 Options
    7. 6.7 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Device Enable (EN)
      2. 7.3.2 Undervoltage Shutdown
      3. 7.3.3 Current Limit
      4. 7.3.4 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With VIN Lower Than 3 V
      2. 7.4.2 Operation With VIN Larger Than 3 V
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Input Capacitor
        2. 8.2.2.2 Output Capacitor
      3. 8.2.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

ESD Ratings

VALUEUNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1)
HBM ESD classification level H2
±2000 V
Charged-device model (CDM), per AEC Q100-011
CDM ESD classification level C3B
Corner pins
(1, 4, 5, and 8)
±750
Other pins±500
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.