SLVSFT8F February   2023  – December 2023 TPS7H1111-SEP , TPS7H1111-SP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Quality Conformance Inspection
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Bias Supply
      2. 8.3.2  Output Voltage Configuration
      3. 8.3.3  Output Voltage Configuration with a Voltage Source
      4. 8.3.4  Enable
      5. 8.3.5  Soft Start and Noise Reduction
      6. 8.3.6  Configurable Power Good
      7. 8.3.7  Current Limit
      8. 8.3.8  Stability
        1. 8.3.8.1 Output Capacitance
        2. 8.3.8.2 Compensation
      9. 8.3.9  Current Sharing
      10. 8.3.10 PSRR
      11. 8.3.11 Noise
      12. 8.3.12 Thermal Shutdown
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Applications
      1. 9.2.1 Application 1: Set Turn-On Threshold with EN
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 Bias Supply
          2. 9.2.1.2.2 Output Voltage Configuration
          3. 9.2.1.2.3 Output Voltage Accuracy
          4. 9.2.1.2.4 Enable Threshold
          5. 9.2.1.2.5 Soft Start and Noise Reduction
          6. 9.2.1.2.6 Configurable Power Good
          7. 9.2.1.2.7 Current Limit
          8. 9.2.1.2.8 Output Capacitor and Ferrite Bead
        3. 9.2.1.3 Application Curve
      2. 9.2.2 Application 2: Parallel Operation
        1. 9.2.2.1 Design Requirements
        2. 9.2.2.2 Detailed Design Procedure
          1. 9.2.2.2.1 Current Sharing
        3. 9.2.2.3 Application Results
    3. 9.3 Capacitors Tested
    4. 9.4 TID Effects
    5. 9.5 Power Supply Recommendations
    6. 9.6 Layout
      1. 9.6.1 Layout Guidelines
      2. 9.6.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Third-Party Products Disclaimer
      2. 10.1.2 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PWP|28
Thermal pad, mechanical data (Package|Pins)
Orderable Information

10.5 Electrostatic Discharge Caution

GUID-D6F43A01-4379-4BA1-8019-E75693455CED-low.gif This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.