SLUSD66D September 2019 – February 2021 TPS92520-Q1
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
EXTERNAL ANALOG AND GATE DRIVE SUPPLIES (V5D, V5A) | ||||||
VV5D,A(UVLO) | V5D and V5A UVLO threshold | Rising | 4.10 | 4.26 | V | |
Falling | 3.84 | 4.00 | V | |||
Hysteresis | 100 | mV | ||||
IV5A(STBY) | Analog supply stand-by current | VUDIM1 = VUDIM2 = 0 V | 4 | 5 | mA | |
IV5D(STBY) | Gate drive supply stand-by current | VUDIM1 = VUDIM2 = 0 V | 0.9 | 1.3 | mA | |
IV5A(SLEEP) | Analog supply sleep state current | 16 | 300 | nA | ||
IV5D(SLEEP) | Gate drive supply sleep state current | 17 | 24 | µA | ||
IVINx(SLEEP) | VIN pin sleep state current | VINx = 15 V | 2 | 4 | μA | |
IV5D(SW) | Gate drive supply switching current | VV5D = 5 V, fSW = 1 MHz, CH1 and CH2 switching | 12 | 20 | mA | |
HIGH-SIDE FET (SWx, BOOTx) | ||||||
RDSx(ON-HS) | High-side MOSFET on resistance | VINx = 6 V, VBSTx = 11 V, IHSx = 100 mA | 227 | 440 | mΩ | |
VBSTx(UV) | Bootstrap UVLO threshold | Falling, VINx = 6 V, VSWx = 0 V | 2.60 | 2.95 | 3.30 | V |
Hysteresis, VINx = 6 V, VSWx = 0 V | 120 | 184 | 250 | mV | ||
IQ(xBST) | Bootstrap pin quiescent current | VBSTx = 5 V, VSWx = 0 V | 200 | 250 | 300 | µA |
LOW-SIDE FET (SWx) | ||||||
RDSx(ON-LS) | Low-side MOSFET on resistance | VINx = 6 V, ILSx = 100 mA | 227 | 440 | mΩ | |
HIGH-SIDE FET CURRENT LIMIT | ||||||
IHSx(ILIM) | High-side current limit threshold | VINx = 6 V | 2.1 | 2.7 | 3.5 | A |
tHSx(LEB) | High-side current sense leading-edge blanking period | VINx = 6 V | 35 | 60 | 80 | ns |
tHSx(RES) | Current limit response time | VINx = 6 V | 20 | ns | ||
LOW-SIDE FET CURRENT LIMIT | ||||||
ILSx(ILIM) | Low-side sinking current limit threshold | VINx = 6 V | 1.00 | 1.50 | 2.15 | A |
tLSx(LEB) | Low-side current sense leading-edge blanking period | VINx = 6 V | 76 | ns | ||
OSCILLATOR | ||||||
fOSC | Oscillator frequency | 9.2 | 10.8 | 12.4 | MHz | |
ANALOG TO DIGITAL CONVERTER (VDD, VIN1, VIN2, VCSN1, VCSN2, LHI, TEMP) | ||||||
tCONV | ADC conversion time | 18 | µs | |||
VADC(FS) | ADC full scale | 2.38 | 2.45 | 2.52 | V | |
qADC | ADC LSB | 2.4 | mV | |||
ADCINL | Integral nonlinearity | –2 | 2 | LSB | ||
ADCDNL | Differential nonlinearity | –2 | 2 | LSB | ||
qTEMP | Temperature LSB | 1.4 | count | |||
ADCTEMP | ADC measurement output | TJ = 25 °C | 414 | count | ||
TJ = 125 °C | 553 | count | ||||
KVINx | VINx sense resistor divider ratio | 0.037 | ||||
KV5D | V5D sense resistor divider ratio | 0.45 | ||||
KLHI | LHI sense resistor divider ratio | 1 | ||||
ANALOG ADJUST SETTING AND CURRENT SENSE AMPLIFIER (CSPx, CSNx) | ||||||
VDACx(FS) | DAC full scale | 2.38 | 2.45 | 2.52 | V | |
qDAC | DAC resolution | 2.33 | 2.40 | 2.47 | mV | |
DACxINL | Integral nonlinearity | –1 | 1 | LSB | ||
DACxDNL | Differential nonlinearity | CHxADJ stepped (63-64, 127-128, 255-256, 511-512, 1022-1023) | –0.85 | 0.85 | LSB | |
V(CSPx-CSNx) | Current sense threshold | VCSPx = 6 V, ILED_REF_DACx = 1023 |
167.5 | 173.0 | 178.5 | mV |
VCSPx = 6 V, ILED_REF_DACx = 512 |
83.0 | 88.5 | 94.0 | mV | ||
VCSPx = 6 V, ILED_REF_DACx = 192 |
29.0 | 34.5 | 40.0 | mV | ||
VCSPx = 6 V, ILED_REF_DACx = 63 |
6.5 | 12.5 | 18.5 | mV | ||
gmx(LV) | Level shift amplifier transconductance | VINx = 63 V, VCSNx = 5 V | 50 | µA/V | ||
VCSPx(SHT) | Output short circuit detection threshold | Rising | 2.65 | V | ||
Falling | 2.45 | V | ||||
VALLEY CURRENT COMPARATOR (CSPx, CSNx) | ||||||
VVALx(OS) | Systematic comparator offset voltage | VCSNx < 2.4 V | 17 | mV | ||
ON-TIME GENERATOR | ||||||
tONx(MIN) | Minimum on-time. | VINx = 4.5 V | 87 | 105 | 123 | ns |
tONx | Programmed on-time | VINx = 50 V, VCSPx = 38 V, tonx_DAC = 39 | 295 | 375 | 460 | ns |
VINx = 50 V, VCSPx = 25 V, tonx_DAC = 7 | 900 | 1155 | 1400 | ns | ||
OFF-TIME GENERATOR | ||||||
tOFFx(MIN) | Minimum off-time | VINx = 4.5 V | 44 | 57 | 68 | ns |
PWM DIMMING and PROGRAMMABLE UVLO INPUT (DIMx) | ||||||
VUDIMx(EN) | UDIM input threshold | Rising | 1.22 | 1.27 | V | |
Falling | 1.075 | 1.120 | V | |||
IUDIMx(UVLO) | UDIM source current (UVLO hysteresis) | VUDIMx = 1.5 V | 8 | 10 | 12 | µA |
ERROR AMPLIFIER (COMPx) | ||||||
gM | Transconductance | VINx = 63 V | 450 | µA/V | ||
ICOMPx(SRC) | COMPx current source capacity | VINx = 63 V, V(CSPx–CSNx) = 0 V, CHxIADJ = 578 | 45 | µA | ||
ICOMPx(SINK) | COMPx current sink capacity | VINx = 63 V, V(CSPx–CSNx) = 200 mV, CHxIADJ = 578 | 45 | µA | ||
EAx(BW) | Bandwidth | Unity gain | 3 | MHz | ||
EA(VD) | Input differential sense range | –225 | 225 | mV | ||
EA(CM) | Input common mode range | VINx = 63 V | 0 | VINx – 0.5 | V | |
ICOMPx(LKG) | COMPx leakage current | VUDIMx = 0 V | 2.5 | nA | ||
VCOMPx(ST) | COMPx startup threshold | Rising | 2.45 | V | ||
Hysteresis | 250 | mV | ||||
VCOMPx(OV) | COMPx over-voltage detection threshold | Rising | 3.0 | 3.2 | V | |
Hysteresis | 60 | mV | ||||
RCOMPx(DCH) | COMPx discharge FET resistance | 230 | Ω | |||
VCOMPx(RST) | Reset voltage | Falling | 100 | mV | ||
LIMP HOME CURRENT SET POINT (LHI) | ||||||
ILHI | Source current | VIN = 6 V | 8 | 10 | 12 | µA |
VLHI(SD) | Shutdown threshold | Rising, VIN = 6 V | 174 | 200 | 227 | mV |
Falling, VIN = 6 V | 119 | 148 | 176 | mV | ||
FAULT INDICATOR (FLT) | ||||||
R(FLT) | Fault pin pull-down resistance | 3 | 7 | Ω | ||
TOC | Hiccup retry delay time | 3.6 | ms | |||
SERIAL PERIPHERAL INTERFACE (MOSI, MISO, SCK, SSN) | ||||||
VOL-MISO | Output low voltage threshold | IMISO = 10 mA | 0.5 | V | ||
RDS-MISO | IMISO = 10 mA | 50 | Ω | |||
VINPUT(RISE) | Logic threshold (SSN, SCK, MOSI) | Rising | 1.8 | V | ||
VINPUT(FALL) | Falling | 0.8 | V | |||
tSS-SU | SSN setup time | Falling edge of SSN to 1st SCK rising edge | 500 | ns | ||
tSS-H | SSN hold time | Falling edge of 16th SCK to SSN rising edge | 250 | ns | ||
tSS-HI | SSN high time | Time SSN must remain high between transactions | 1000 | ns | ||
tSCK | SCK period | Clock period | 500 | ns | ||
DSCK | SCK duty cycle | Clock duty cycle | 40 | 60 | % | |
tSU | MOSI setup time | MOSI valid to rising edge SCK | 125 | ns | ||
tH | MOSI hold time | MOSI valid after rising edge SCK | 140 | ns | ||
tHI_Z | MISO tri-state time | Time to tri-state MISO after SSN rising edge | 110 | 320 | ns | |
tMISO_HL | MISO valid high-to-low | Time to place valid "0" on MISO after falling SCK edge | 320 | ns | ||
tMISO_LH | MISO valid low-to-high | Time to tri-state MISO after falling SCK edge | 320+tRC | ns | ||
tZO_HL | MISO drive time high-to-low | SSN Falling Edge to MISO falling | 320 | ns | ||
THERMAL SHUTDOWN | ||||||
TSD | Thermal shutdown threshold | 175 | °C | |||
TSD(HYS) | Thermal shutdown hysteresis | 16 | °C |