SLUSF51C March 2023 – January 2024 TPSM863252 , TPSM863253 , TPSM863257
PRODUCTION DATA
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
INPUT SUPPLY VOLTAGE | ||||||
VIN | Input voltage range | VIN | 3 | 17 | V | |
IVIN | VIN supply current | No load, VEN = 5V, non-switching, PSM version | 100 | µA | ||
No load, VEN = 5V, non-switching, FCCM version | 370 | µA | ||||
IINSDN | VIN shutdown current | No load, VEN = 0V | 2 | µA | ||
UVLO | ||||||
UVLO | VIN undervoltage lockout | Wake up VIN voltage | 2.8 | 2.9 | 3.0 | V |
UVLO | VIN undervoltage lockout | Shut down VIN voltage | 2.6 | 2.7 | 2.8 | V |
UVLO | VIN undervoltage lockout | Hysteresis VIN voltage | 200 | mV | ||
FEEDBACK VOLTAGE | ||||||
VFB | FB voltage | TJ = 25°C | 594 | 600 | 606 | mV |
VFB | FB voltage | TJ = –40°C to 125°C | 591 | 600 | 609 | mV |
VOUT | TPSM863253 output voltage | TJ = 0°C to 65°C | 3.27 | 3.3 | 3.33 | V |
VOUT | TPSM863253 output voltage | TJ = –40°C to 125°C | 3.25 | 3.3 | 3.35 | V |
MOSFET | ||||||
RDS (ON)HI | High-side MOSFET Rds(on) | TJ = 25°C, VVIN ≥ 5V | 55 | mΩ | ||
TJ = 25°C, VVIN = 3V (1) | 68 | mΩ | ||||
RDS (ON)LO | Low-side MOSFET Rds(on) | TJ = 25°C,VVIN ≥ 5V | 24 | mΩ | ||
TJ = 25°C, VVIN = 3V | 30 | mΩ | ||||
DUTY CYCLE and FREQUENCY CONTROL | ||||||
FSW | Switching frequency | TJ = 25°C, VVOUT = 3.3V | 1.2 | MHz | ||
TOFF(MIN)(1) | Minimum off-time | VFB = 0.5V | 110 | ns | ||
TON(MIN) | Minimum on-time | 60 | ns | |||
CURRENT LIMIT | ||||||
IOCL_LS | Over current threshold | Valley current set point | 3.1 | 4.1 | 5.1 | A |
INOCL | Negative over current threshold | Valley current set point | 1.5 | 2.0 | 2.5 | A |
LOGIC THRESHOLD | ||||||
VEN(ON) | EN threshold high-level | 1.15 | 1.20 | 1.25 | V | |
VEN(OFF) | EN threshold low-level | 0.90 | 1.00 | 1.10 | V | |
VENHYS | EN hystersis | 200 | mV | |||
REN1 | EN pulldown resistor | 2 | MΩ | |||
OUTPUT DISCHARGE and SOFT START | ||||||
tSS | Internal soft-start time | 1.6 | ms | |||
OUTPUT UNDERVOLTAGE AND OVERVOLTAGE PROTECTION | ||||||
VOVP | OVP trip threshold | 110 | 115 | 120 | % | |
tOVPDLY | OVP prop deglitch | 24 | us | |||
VUVP | UVP trip threshold | 55 | 60 | 65 | % | |
tUVPDLY | UVP prop deglitch | 220 | us | |||
tUVPEN | Output hiccup enable delay relative to SS time |
UVP detect | 14 | ms | ||
PGOOD | ||||||
TPGDLY | PG start-up delay | PG from low to high | 1 | ms | ||
TPGDLY | PG start-up delay | PG from high to low | 28 | us | ||
VPGTH | PG threshold | VFB falling (fault) | 80 | 85 | 90 | % |
VPGTH | PG threshold | VFB rising (good) | 85 | 90 | 95 | % |
VPGTH | PG threshold | VFB rising (fault) | 110 | 115 | 120 | % |
VPGTH | PG threshold | VFB falling (good) | 105 | 110 | 115 | % |
VPG_L | PG sink current capability | IOL = 4mA | 0.4 | V | ||
IPGLK | PG leak current | VPGOOD = 5.5V | 1 | uA | ||
THERMAL PROTECTION | ||||||
TOTP(1) | OTP trip threshold | 155 | °C | |||
TOTPHSY(1) | OTP hysteresis | 20 | °C |